1SV277 Search Results

SV277

Contextual Info: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)

1SV277

Contextual Info: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Product specification 1SV277 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.30Typ. Low Series Resistance:rs = 0.42 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

Contextual Info: 1SV277WT BAND SWITCHING DIODE PINNING Applications • Low loss band switching in VHF television tuners • Surface mount band-switching circuits PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T Top View Marking Code: "T" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC

1SV277

Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV277 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.30Typ. Low Series Resistance:rs = 0.42 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02

1SV277

Contextual Info: 1SV277 TOSHIBA 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)

1SV277

Contextual Info: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)

Contextual Info: 1SV277 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 7 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5

1SV277

Abstract: 900E
Contextual Info: 1SV277 TO SH IBA 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV277 V C O FOR UHF B A N D R A D IO • • • High Capacitance Ratio : C i v /,C4 V = 2.3 Typ. Low Series Resistance : rs = 0.42O (Typ.) Small Package M A X IM U M RATIN G S (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package DESCRIPTION PIN • Continuous reverse voltage: max. 35 V 1 Cathode • Continuous forward current: max.100 mA 2 Anode • Low diode capacitance: max.1.2 pF 2 1 • Low diode forward resistance: max. 0.7 Ω

Contextual Info: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. · Low series resistance: rs = 0.42 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)

1SV277

Contextual Info: 1SV277 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV277 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.3 標準 • 直列抵抗が小さい。 : rs = 0.42 Ω (標準) • 2 端子小型外囲器なので､チューナの小型化に適しています。

Contextual Info: TOSHIBA 1SV277 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package 0±0.05 M A X IM U M RATINGS (Ta = 25°C)

1SV277

Contextual Info: 1SV277 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 7 7 Unit in mm VCO FOR UHF BAND RADIO • High Capacitance Ratio : C iy /C 4 Y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)

1SV277

Contextual Info: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. · Low series resistance: rs = 0.42 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

1SV277

Contextual Info: 20010110 1SV277 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V

100MHZ

Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

Contextual Info: TOSHIBA 1SV277 TOSHIBA VARIABLE CAPACITANCE DIODE U• v V W 9 SILICON EPITAXIAL PLANAR TYPE 7 7 * VCO FOR UHF BAND RADIO U nit in mm • High Capacitance Ratio : C i y / C 4 v = 2.3 Typ. • Low Series Resistance • Sm all Package : r$ = 0 .4 2 il (Typ.)

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The