112001 Search Results

21-S3-C8465

Abstract: S3P8469 c4632 TB846 tda 5238 FM24653 ISO-14001 P8469-112001 SRAM KM62256 km62256
Contextual Info: 21-S3-C8465/C8469/P8469-112001 USER'S MANUAL S3C8465/C8469/P8469 8-Bit CMOS Microcontrollers Revision 1 S3C8465/C8469/P8469 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at

Contextual Info: Advance information Features • Intelliw att active p o w e r red u ction circuitry • Easy m em o r y exp an sion w ith CEI, CE2, OË in p uts • 1.6 5 V to 1.9 5 V op eratin g range 0ESD 8 -7 • TTL/LVTTL-com patible, three-state I /O • JEDEC registered packaging

Contextual Info: H ig h P erform a n ce 32 K X 16 CMOS SRAM A S7C 513 A S 7 C 3 5 13 3 2 K x 16 CMOS SRAM • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss tim e

Contextual Info: Preliminary information •■ AS7C251024LL A 2.5V 128K X 8 lntelliwatt,v low power CM O S SRAM Features • • • • Intelliwatt active power reduction circuitry 2.3V to 3.0V operating range Organization: 131,072 words x 8 bits High speed - 5 5 * /7 0 /1 0 0 ns address access time

Contextual Info: H ig h p e r f o r m a n c e 6 4 K X 16 C M O S SR AM A S7C 31026L L 6 4 K X 16 In telliw att low power CMOS SRAM Advance information • • • • • Optimized design for battery operated portable systems Intelliwatt™ active pow er reduction circuitry

Contextual Info: AS7C 513 AS7C 3513 5V/3 .3V 32 Kx 16 CMOS SRAM Features • Organization: 32,768 w ords x 16 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 504 m W max 20 ns cycle

Contextual Info: H ig h P e r f o r m a n c e 64K X 8 3.3V CM OS SRAM A S 7 C 3 5 12 X Low voltage 6 4 K x 8 CM O S SRAM • O rganization: 6 5 ,5 3 6 w ords x 8 bits • Single 3.3 ± 0.3V p o w er supply • H igh speed - 2 0 /2 5 ns address access tim e - 5 / 6 ns o u tp u t enable access tim e

Contextual Info: APT30M75BLL APT30M75SLL 300V 44A 0.075W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Connettori ITS

Contextual Info: Connettori ITS ITS Connectors Indice Contents I. Connettori ITS - ITS connectors Pag. / Page 3 Generalità - General description 4 Caratteristiche tecniche - Technical characteristics Dimensioni contatti - Contacts dimensions 6 Contatti a crimpare - Crimp contacts

Contextual Info: APT30M17JLL 300V 135A 0.017W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: KEY SWITCH MULTIPLE PUSH SWITCH JPM 1990-0101 • JPM 1110-01 □ □ /0 2 D D ■ JPM 1990-18DD/19nn ■ 4.5 m m M T S W ITCH SPST MTX-1'-yfF(1IS]!&1i*.6) • Contact:Mechanical • Rating: 10mA 12V DC • Contact Resistance: 100mQ max. • Insulation Resistance:

KM 3502 P

Abstract: km 3512
Contextual Info: TTL-com patible, three-state 1 /O Ideal for cache and portable co m p u tin g - 75% p o w er red u ctio n d u rin g CPU idle m ode 3 2 -p in JEDEC standard packages - 300 m il PDIP and SOJ ESD p ro tectio n > 2 0 0 0 volts Latch-up cu rren t > 200 mA • O rganization: 6 5 ,5 3 6 w o rd s x 8 bits

114-0187

Abstract: 111-01960
Contextual Info: Cable Ties and Fixings C a b l e Ti e s I n s i d e S e r r a t e d 1.2 Cable Ties inside serrated • T-Series Features and Benefits Available in a wide range of materials, these cable ties all feature internal serrations allowing for a positive hold onto cable, hose

a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor

Contextual Info: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book April 2007 Revision A - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.

Contextual Info: 3UHOLPLQDU\#LQIRUPDWLRQ HEUXDU\#5333 $698$58949 )HDWXUHV AS6UA25616 Intelliwatt active power circuitry Industrial temperature: -40° C to 85° C Organization: 262,144 words x 16 bits

Contextual Info: 4 THIS DRAWING IS C O P Y R IG H T 3 U N P U B L IS H E D . 19 RELEASED BY AMP INCORPO RA TE D. FOR ALL PUBLICATION RIGHTS 2 19 LOC RE SE R VE D . REVISIONS DI ST AD 47 L TR DESCRIPTION REVISE D MATERIAL. STAINLESS PER ECN DATE 0U1B-0384-0Q 2FEB01 DWN AP VD

Contextual Info: PIC24FJ128GA310 FAMILY 64/80/100-Pin, General Purpose, 16-Bit Flash Microcontrollers with LCD Controller and nanoWatt XLP Technology Extreme Low-Power Features: Peripheral Features continued : • Multiple Power Management Options for Extreme Power Reduction:

VLN 2003

Abstract: AS7C1025 AS7C31025 20013A ldh 0470
Contextual Info: A S7C1025 AS7C31025 5V/3.3V 128K •8 C M O S SRAM iCom nion I/O Features • Organization: 131,072 w ords X 8 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption - Active:

AS7C1026

Abstract: AS7C3513 AS7C4098 AS7C513 13-10TC
Contextual Info: AS7C513 AS7C3513 A 1 5V/3.3V 32Kx 16 CMOS SRAM Features • O rg an izatio n : 3 2 ,7 6 8 w o rd s X 16 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns ad d ress access tim e - 5 / 6 / 8 / 1 0 ns o u tp u t en ab le access tim e • Low p o w e r c o n su m p tio n

7C1025-15

Abstract: 20013 AS7C1025 AS7C31025 ASC310 275mWmax 7C1025
Contextual Info: H ig h P erfo rm a n ce 128K x8 CMOS SRAM » A S7C 1 025 A S 7 C 3 102 5 H A 1 2 8 K X 8 CM O S SRAM C o m m o n I / O • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 3 2 - p i n JEDEC s ta n d a r d p a c k a g e - 3 0 0 / 4 0 0 m i l SOJ

Contextual Info: ERRATA SHEET DS3112 TEMPE T3 E3 Multiplexer 3.3V T3/E3 Framer and M13/E13/G.747 Mux www.maxim-ic.com REVISION B1 ERRATA The errata listed below describe situations where DS3112 revision B1 components perform differently than expected or differently than described in the data sheet. Dallas Semiconductor intends to fix these

7C80381A

Abstract: 7C80381 CY2037-2WAF CY2037AWAF S2032 Mil-Std-883 Wire Bond Pull Method 2011
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 98225VERSION 1.0 September, 2000 Single PLL Programmable Clock L28 Technology, Fab 2 CY2037AWAF CY2037-2WAF CY5037AWAF High Accuracy EPROM Programmable Die for Crystal Oscillators CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

PV 100 USB

Abstract: EME 6300HR CY7C64013 CY7C64113 CY7C65013 CY7C65113 CY7C66013 CY7C66113
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 99443 VERSION 3.0 November, 2000 CYUSB3 Family P26 Technology, Fab 23 -HME CY7C64013/ CY7C64113 Full Speed USB 12 Mbps Function CY7C65013/ CY7C65113 USB Hub Microcontroller CY7C66013/ CY7C66113 Full Speed USB (12 Mbp)

1120-02-PK

Abstract: SMOUV-1120 112001 1120 Hot Rod
Contextual Info: SMOUV Fibre Optic Fusion Splice Protector SMOUV-1120 splice protector sleeves provide mechanical and environmental protection for fusion splices of single and ribbonized fiber. The SMOUV-1120 sleeve consists of • a clear outer heatshrink material • a low temperature hot melt adhesive to