AS7C513 Search Results

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: March 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

Contextual Info: December 2003 AS7C513B 5V 32Kx16 CMOS SRAM Features • Compatible to AS7C513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

AS7C1026

Abstract: AS7C3513 AS7C4098 AS7C513 13-10TC
Contextual Info: AS7C513 AS7C3513 A 1 5V/3.3V 32Kx 16 CMOS SRAM Features • O rg an izatio n : 3 2 ,7 6 8 w o rd s X 16 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns ad d ress access tim e - 5 / 6 / 8 / 1 0 ns o u tp u t en ab le access tim e • Low p o w e r c o n su m p tio n

6846

Abstract: AS7C3513 AS7C3513-12 AS7C513 AS7C513-12 oh140
Contextual Info: 2&72% 5#4<<<# $6:&846 $6:&6846 8926169#65.ð49#&026#65$0 # HDWXUHV • Low power consumption: STANDBY - 28 mW (AS7C513) / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

Contextual Info: AS7C513 AS7C3513 5V/3.3V 32Kx 16 CMOS SRAM Features • O i g a n i z a t b n : 3 2 ,7 68 w o i r is x 1 6 b i t s • TTL -com p a t b i e , t h ie e - s t a i e 1/0 • H ig h g p e a d • 4 4 - p i n ÆDEC s ta n d a id p a c k a g e - 1 0 / 1 2 /1 5 / 2 0 n s a d d ie s s access tin e

Contextual Info: June 2001 Preliminary Information AS7C513A AS7C3513A 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513A 5V version • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins

Contextual Info: High Performance AS7C513 A S7C 3513 32KX16 CMOS SRAM A 3 2 K X 1 6 CM O S SRAM Advance information Features • Organization: 32,768 words x 16 bits • High speed - 1 2 / 1 5 / 2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low power consumption

AS7C513C

Contextual Info: September 2006 Advance Information AS7C513C 5 V 32K X 16 CMOS SRAM Features • JEDEC standard packaging - 44-pin 400 mil SOJ - 44-pin TSOP 2 • ESD protection ≥ 2000 volts Pin arrangement A6 A7 I/O0–I/O7 I/O8–I/O15 Control circuit Address decoder

Contextual Info: H igh Perform ance 32K X16 CMOS SRAM AS7C513 AS7C3513 3 2 K x 16 CMOS SRAM Advance information • Organization: 32,768 w ords x 16 bits • High speed - 1 2 /1 5 /2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low pow er consumption

018U

Abstract: AS7C5
Contextual Info: October 2003 AS7C513B 5V 32Kx16 CMOS SRAM Features • Compatible to AS7C513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

256KX16

Abstract: 64KX16 AS7C1026 AS7C3513 AS7C4098 AS7C513 cm540
Contextual Info: H igh P erform an ce 3 2 K x 16 C M O S SRAM « H AS7C513 AS7C3513 A 3 2 K x 1 6 CM OS SRAM Features • O r g a n iz a t io n : 3 2 , 7 6 8 w o r d s x 1 6 b its • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss t im e

TAA 621 applications

Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Contextual Info: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM • • • • • • AS7C513 5V version AS7C3513 (3.3V version) Industrial and commercial temperature Organization: 32,768 words × 16 bits Center power and ground pins High speed - 12/15/20 ns address access time

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • Low power consumption: STANDBY - 28 mW AS7C513 / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: May 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

Contextual Info: AS7C513 AS7C3513 5V /3.3V 32Kx 16 CMOS SRAM Features • Organization: 3 2 ,7 6 8 w ords X 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low pow er consum ption - Active: 504 mW m ax 20 ns cycle

AS7C3513

Abstract: AS7C513
Contextual Info: September 2001 AS7C513 AS7C3513 Š 5V/3.3V 32Kx16 CMOS SRAM HDWXUHV • AS7C513 5V version) • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

AS7C3513

Abstract: AS7C3513A AS7C513 AS7C513A
Contextual Info: September 2001 Preliminary Information AS7C513A AS7C3513A Š 5V/3.3V 32Kx16 CMOS SRAM HDWXUHV • AS7C513A 5V version) • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins

05N14

Abstract: AS7C3513 AS7C513
Contextual Info: H ig h P e r fo r m a n c e 3 2 K x 16 32Kx16 CM O S SRAM „ AS7C513 | | A S 7 C 3 5 13 32K x 16 CMOS SRAM Advance information • T T L -com patible, th ree-state I/O • 4 4 -p in JEDEC sta n d ard package - 4 0 0 m il SOJ - 4 0 0 m il TSOP II • C enter p o w e r a n d g ro u n d pin s

28K1

Abstract: AS7C1026 AS7C4098 AS7C513 TMS320C5X
Contextual Info: Advance inform ation AS7C3128K16 A 3.3V 128K x 16 CMOS SRAM 4 4 -p in JEDEC sta n d a rd package - 4 0 0 m il SOJ - 4 0 0 m il TSOP II U p w a rd a n d d o w n w a rd c o m p a tib le - 3 2 K x 16 AS7C513 - 6 4 K x 16 (A S7C 1026) - 2 5 6 K x 16 (A S7C 4098)

Contextual Info: November 2003 AS7C513A AS7C3513A 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513A 5V version • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed

Contextual Info: H ig h P erform a n ce 32 K X 16 CMOS SRAM A S7C 513 A S 7 C 3 5 13 3 2 K x 16 CMOS SRAM • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss tim e

Contextual Info: AS7C 513 AS7C 3513 5V/3 .3V 32 Kx 16 CMOS SRAM Features • Organization: 32,768 w ords x 16 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 504 m W max 20 ns cycle

1H08S

Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Contextual Info: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -