AS7C3128K16 Search Results

Contextual Info: Advance information AS7C3128K16 3.3V 128KX16 CMOS SRAM Features • O rganization: 131,072 w ords X 16 bits • 3.3V ± 0.3 operation • H igh speed - 1 0 /1 2 /1 5 ns address access tim e - 5 / 6 / 8 ns output enable access tim e • Low pow er consum ption

28K1

Abstract: AS7C1026 AS7C4098 AS7C513 TMS320C5X
Contextual Info: Advance inform ation AS7C3128K16 A 3.3V 128K x 16 CMOS SRAM 4 4 -p in JEDEC sta n d a rd package - 4 0 0 m il SOJ - 4 0 0 m il TSOP II U p w a rd a n d d o w n w a rd c o m p a tib le - 3 2 K x 16 AS7C513 - 6 4 K x 16 (A S7C 1026) - 2 5 6 K x 16 (A S7C 4098)

AS7C31026

Abstract: AS7C34098 AS7C3513 AS7C4098 7c34098-12
Contextual Info: AS7C4098 AS7C34098 5V/3.3V 256Kx16 CMOS SRAM Features • Easy memory expansion with CE, OE inputs • TTL- and CMOS-compatible, three-state I/ • 44-pin JEDEC standard packages - 400 mil SOJ - 400 mil TSOP II • Center power and ground pins for low noise

Contextual Info: AS7C1026 AS7C31026 X 5V/3.3V 64Kx 16 CMOS SRAM Features • Organization: 65,536 words x 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 5 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 770 mW max 20 ns cycle, 5V

Contextual Info: Advance information Features • Organization: 131,072 words x 16 bits • 3.3V ±0.3 operation • H igh speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low pow er consum ption - Active: 5 0 4 m W max 15 ns cycle

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

Contextual Info: Features • Organization: 65,536 words x 16 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low pow er consum ption - Active: 770 m W max 20 ns cycle, 5V - Standby: 28 m W max, CMOS I/O

Contextual Info: AS7C 1026 AS 7C 31026 5 V /3 .3V 6 4 K x 16 CMOS SRAM Features •O igan izatbn : 65,5 3 6 w o id sx 16 bits •High gpeed - 1 0 / 1 2 / 1 5 / 2 0 nsadchess access tim e - 5 / 6 / 8 / 1 0 n s output enable access tim e •low pow e r consum p tb n -A ctiv e: 770 mW m ax 20 n s cycle, 5V

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

Contextual Info: Advance information AS7C3128K 16 3.3V 128Kx16 CMOS SRAM Features • Organization: 131,072 w ords x 16 bits • 3.3V±0.3 operation • High speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low power consumption - Active: 504 m W max 15 ns cycle

Contextual Info: AS7C4098 AS7C34098 5Y/3.3Y 256Kxl6 CMOS SRAM Features • Organization: 262,144 words x 16 bits • Available in 3.3Y AS7C34098 and 5Y (AS7C34098) versions • High speed - 10/12/15/20/25 ns address access time - 4/4/5/5/6/7 ns output enable access time

Contextual Info: A S7C 3128K 16 H igh P erfo rm a n ce 128KX16 3 .3 V C M O S S R A M 128KX16 CMOS SRAM Advance information Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 1 6 b its - 4 0 0 m il SOJ • H ig h s p e e d - 4 0 0 m il TSOP II - 1 0 / 1 2 / 1 5 n s a d d ress a c ce ss tim e

Contextual Info: AS7C1026 AS7C31026 5V/3.3V 64Kx 16 CMOS SRAM Features • O rganization: 2 6 2 ,1 4 4 w o id s x 16 b i s • H igh ç œ d - 1 2 /1 5 /2 0 / 2 5 n s address access tim. e - 5 / 5 / 6 / 7 n s o u tp u t enable access tin e • Low p o w e r consum ption -A c tiv e : 7 7 0mW m ax 20 n sc y cle , 5V

256KX16

Abstract: 64KX16 AS7C1026 AS7C4098 AS7C513 T4347
Contextual Info: High Performance 128KX16 3.3V CMOS SRAM H A S7C3128K 16 A • O rganization: 131,072 w ords x 16 bits • 3.3V ±0.3 operation • H igh speed - 10 /1 2 /1 5 ns address access tim e - 5 /6 / 8 ns o u tp u t enable access tim e • Low p o w er consum p tion