AS7C3128K Search Results

Contextual Info: Advance information •■ I l AS7C3128K32Z AS7C3128K36Z I 3.3V 128Kx32/36 synchronous burst SRAM with ZBT1 Features • • • • • • • • • • O rg an izatio n : 1 3 1 ,0 7 2 w o rd s x 3 2 o r 3 6 bits ZBT arc h ite c tu re fo r efficien t b u s o p e ra tio n

351N

Abstract: Pentium II Processor - Low Power
Contextual Info: Advance information •■ I l AS7C3128K36P AS7C3128K32P I 3.3V 12 8 K x 3 2 /3 6 pipeline burst synchronous SRAM Features • • • • • • • • • • O rg an izatio n : 1 3 1 ,0 7 2 w o rd s x 3 2 o r 3 6 bits Fast clock speeds to 166 M H z in LVTTL/LVCMOS

Contextual Info: Advance information AS7C3128K 16 3.3V 128Kx16 CMOS SRAM Features • Organization: 131,072 w ords x 16 bits • 3.3V±0.3 operation • High speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low power consumption - Active: 504 m W max 15 ns cycle

Contextual Info: Advance information AS7C3128K16 3.3V 128KX16 CMOS SRAM Features • O rganization: 131,072 w ords X 16 bits • 3.3V ± 0.3 operation • H igh speed - 1 0 /1 2 /1 5 ns address access tim e - 5 / 6 / 8 ns output enable access tim e • Low pow er consum ption

28K1

Abstract: AS7C1026 AS7C4098 AS7C513 TMS320C5X
Contextual Info: Advance inform ation AS7C3128K16 A 3.3V 128K x 16 CMOS SRAM 4 4 -p in JEDEC sta n d a rd package - 4 0 0 m il SOJ - 4 0 0 m il TSOP II U p w a rd a n d d o w n w a rd c o m p a tib le - 3 2 K x 16 AS7C513 - 6 4 K x 16 (A S7C 1026) - 2 5 6 K x 16 (A S7C 4098)

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

AS7C31026

Abstract: AS7C34098 AS7C3513 AS7C4098 7c34098-12
Contextual Info: AS7C4098 AS7C34098 5V/3.3V 256Kx16 CMOS SRAM Features • Easy memory expansion with CE, OE inputs • TTL- and CMOS-compatible, three-state I/ • 44-pin JEDEC standard packages - 400 mil SOJ - 400 mil TSOP II • Center power and ground pins for low noise

Contextual Info: AS7C1026 AS7C31026 X 5V/3.3V 64Kx 16 CMOS SRAM Features • Organization: 65,536 words x 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 5 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 770 mW max 20 ns cycle, 5V

Contextual Info: Advance information Features • Organization: 131,072 words x 16 bits • 3.3V ±0.3 operation • H igh speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low pow er consum ption - Active: 5 0 4 m W max 15 ns cycle

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

A301D

Abstract: DA301 A210D
Contextual Info: $GYDQFHLQIRUPDWLRQ $6&.= $6&.= 9.ðV\QFKURQRXVEXUVW65$0ZLWK17'Œ HDWXUHV /RJLFEORFNGLDJUDP 3LQDUUDQJHPHQW D Address register logic CLK LB0 Q 17 DQcp/NC DQc DQc VDDQ VSSQ DQc DQc DQc DQc VSSQ VDDQ DQc DQc FT VDD VDD VSS

Contextual Info: Features • Organization: 65,536 words x 16 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low pow er consum ption - Active: 770 m W max 20 ns cycle, 5V - Standby: 28 m W max, CMOS I/O

Contextual Info: AS7C 1026 AS 7C 31026 5 V /3 .3V 6 4 K x 16 CMOS SRAM Features •O igan izatbn : 65,5 3 6 w o id sx 16 bits •High gpeed - 1 0 / 1 2 / 1 5 / 2 0 nsadchess access tim e - 5 / 6 / 8 / 1 0 n s output enable access tim e •low pow e r consum p tb n -A ctiv e: 770 mW m ax 20 n s cycle, 5V

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

36a 69 diode datasheet

Abstract: TMS320C6X 36A5 1736d 36AP
Contextual Info: High-performance 4Mb synchronous CMOS SRAM AS7C3128PFS32/36A 128K x 32/36 synchronous SRAM Advance information Features • • • • • • • • • • Organization: 131,072 words × 32 or 36 bits Fast clock speeds to 166 MHz in LVTTL/LVCMOS Fast clock to data access: 3.5/3.8/4/5 ns

Contextual Info: AS7C4098 AS7C34098 5Y/3.3Y 256Kxl6 CMOS SRAM Features • Organization: 262,144 words x 16 bits • Available in 3.3Y AS7C34098 and 5Y (AS7C34098) versions • High speed - 10/12/15/20/25 ns address access time - 4/4/5/5/6/7 ns output enable access time

Contextual Info: Features Advance information • Organization: ¡31,072 words x 32 or 36 bits • ZBT architecture for efficient bus operation • Fast clock speeds to 166 MHz • Fast dock to data access: 3.5/3.8 /4 /S ns • Fast OE access time: 3 .5 /3 .5 /3 .8 /4 ns • Fully synchronous register-to-register operation

Contextual Info: Hi gh p e r f o r m a n c e 4 M b s y nc hr on ou s CMOS SRAM AS7C3256KJ6P AS7C3256K18P H '> _ 2 5 6 X X 1 6 / 18 p ip e lin e b u rst synchronous SR A M Advance information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s

TMS320C6X

Abstract: DG014
Contextual Info: H igh p erfo rm an c e 4M b sy n ch ro n o u s CMOS SRAM AS7C3128IC36P A S7C3128K32P h |l " _ 1 2 8 K X 3 2 / 3 6 pipeline burst synchronous SRAM Advance inform ation • • • • • • • • • • Organization: 131,072 words x 32 or 36 bits

Contextual Info: Advance information •■ I l AS7C3256K16P AS7C3256K18P I 3.3V 2 5 6 K x 1 6 /1 8 pipeline burst synchronous SRAM Features • • • • • • • • • • O rg an izatio n : 2 6 2 ,1 4 4 w o rd s x 16 o r 18 bits Fast clock speeds to 166 M H z in LVTTL/LVCMOS

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C