10OJXS Search Results

Contextual Info: IBM0164805B IBM0164805P 8 M x 8 13/10 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time

Contextual Info: / T T SGS-THOMSON M29W004T A 7 # . [M»[g[LI gmMD(gS_ M29W004B 4 Mb (x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10jis typical

Contextual Info: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 35ns ■ FAST PROGRAMMING TIME: 8^s typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

RWI 1275

Abstract: p7613a
Contextual Info: MP76 13 Octal 12-Bit DAC A rra y D/A C onverter with O utput A m plifier and Parallel Data/Address Control Logic FEATURES • E i g h t l n d e p e n d e n t C h a n n e l 1 2-Bit D A C s with O u t p u t Amp l i f i e r s • L o w P o w e r 320 m W typ.

Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 M I C R O S Y S T I:. M S PRELIM IN A R Y D ESC RIPTIO N : The DP5Z2MX16Nn3 "S LC C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, " J " leaded, gullwing

1N914

Abstract: M29W040 PLCC32 TSOP32
Contextual Info: SGS-THOMSON i[Ui EïïïïM]D(ES M 29W 040 4 Mb (512K x 8, Block Erase LOW VOLTAGE SING LE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12^is typical ■ ERASE TIME

IC 7377 pin diagram

Abstract: mp 1060 ceramic filter ffe
Contextual Info: 19-1217; Rev 0; 4/97 V M ilX I A I R e g u l a t e d 3 . 3 V Ch a r g e P u mp The MAX679 step-up, regulated charge pum p gener­ ates a 3.3V ±4 % output vo ltag e from a 1.8V to 3.6V in p u t v o lta g e two a lka lin e , N iC d, or NiM H; o r one Lithium-Ion battery . Output current is 20mA (min) from

Contextual Info: M29W010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 1Ojas typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte

Contextual Info: M29W102BT M29W102BB 1 Mbit 64K b x16, Boot Block Single Supply Flash M em ory PRELIM IN ARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 45ns FAST PROGRAMMING TIME: 1Ojas typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: / T T S G S -T H O M S O N M 29W 008T ^ 7 # - DüiinMglLimoiiüingi_ M 2 9 W 0 0 8 B 8 Mbit x8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns

Contextual Info: M39208 Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 100ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while

Contextual Info: 5 7 . SGS-THOMSON M29F105B 1 Mbit x16, Block Erase Single Supply Flash Memory PRELIM IN ARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

Contextual Info: - PRELIMINARY- <£> Feb. 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET MB 8 1 V 16800 A- 60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu M B81V16800A is a fully decoded CMOS Dynamic RAM DRAM that contains

1N914

Abstract: M29F040 PLCC32 TSOP32 w431 w631
Contextual Info: S G S -T H O M S O N i[Ui EïïïïM]D(ES M 29F040 4 Mb (512K x 8, Block Erase SING LE SUPPLY FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10ps typical ■ ERASE TIME

D94AU179B

Abstract: car power amplifier FLEXIWATT25 TDA7383 4X30W IC-91
Contextual Info: 3 T SGS-THOMSON wÆ e RiiD [^ [l[L[l©¥M[ììQO©S TDA7383 4 x 22W FOUR BRIDG E C H AN N ELS CAR RADIO A M PLIFIER P R O D U C T P R E V IE W • HIGH OUTPUT POWER CAPABILITY: 4 x3 0 W max./AQ. EIAJ 4 x 22\N/4Q. @ 14.4V, 1 KHz, 10% 4 x 18.5W/4Î2 @ 13.2V, 1 KHz, 10%

IA17

Contextual Info: / T 7 S G S -1H 0M S 0N M29W004T *• 7 /. HBSBEHllgUMWlIgg_ M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: lO^is typical

Contextual Info: £yj SGS-THOMSON D S IILI©DMIi!!lll©i M 29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: SGS-THOMSON K8D §Mim(Sfflfi!W[] i M29F040 4 Mb (512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1Ojas typical ■ ERASE TIME - Block: 1.0 sec typical

Contextual Info: M29W008T M29W008B 8 Mbit x8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: MP8820 8-Bit A nalog-to-D igital C onverter with an 8-C hannel MUX FEATURES APPLICATIONS • Preci si on 7 - B i t Pl us Sign A D C • Se r v o Cont r ol • 8 C h a n n e l A na l og M u x • L o w C o s t A ud i o Cont r ol • S i ngl e R e f e r e n c e to G N D

Contextual Info: MOSAIC SEMICONDUCTOR INC 4DE D O b3S33?T 0000443 S HMOC T -4 Ù -J 3 -2 7 32K X 8 EEPROM MEM832V/J-85/10/12 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Pin Definitions 32,768 x 8 CMOS EEPROM Features A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 85,100,120 ns

sgs m29f400b

Abstract: M29F400 M29F400B M29F400T
Contextual Info: W , S G S -T H O M S O N k7# . M29F400T M29F400B 4 Mb x8/x16, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|us by Byte / 1 6|as by W ord typical

7m 0880

Abstract: TDA7381 car wiring diagram tda7381 audio amplifier circuit diagram FLEXIWATT25
Contextual Info: - , k7 # . S G S -T H O M S O N RilD g[E3 [l[LI©'îns]©R!lD(gS TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER • HIGH OUTPUT POWER CAPABILITY: 4 x 25W/4Q EIAJ 4 x 18\N/4Q. @ 14.4V, 1 KHz, 10% 4 x 15W/4C2 @ 13.2V, 1 KHz, 10% ■ CLIPPING DETECTOR . LOW DISTORTION