10OJIH Search Results

Contextual Info: >4MCC ADVANCE INFORMATION 12-OUTPUT BiCMOS PLL CLOCK GENERATOR S4LV406 FEATURES GENERAL DESCRIPTION • Generates outputs from 25 MHz to 100 MHz • Four groups of three outputs 12 outputs total • Eight user-selectable output functions for each group • Proprietary output drivers with:

IRFD110

Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
Contextual Info: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

Contextual Info: Product specification Philips Sem iconductors Data Com m unications Products Coaxial transceiver interface for Ethernet/Thin Ethernet NE8392A PIN CONFIGURATION DESCRIPTION The NEB392A Coaxial T ransceiver interface CTI is a coaxial line driver/receiver for Ethernet (10base5) and T hin Ethernet (10base2)

Contextual Info: MITSUBISHI Pch POWER MOSFET FX1KMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX1 KMJ-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 s i s l 1.1 ±0.2 0.75 ±0.15 0.75 ±0.15 • rDS ON (MAX) . 2.6Í2

Contextual Info: MITSUBISHI Pch POWER MOSFET <«*'•' FX6UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX6UMJ-3 OUTLINE DRAWING Dimensions in mm * • 4 V D R IV E •V dss .-1 5 0 V • rDS ON (MAX) . 0.53Í2

1rfp450

Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Contextual Info: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

Contextual Info: Micmsemi m m a PPC, he. Progress Powered by Technology • 7 51 6 C entral Industrial D rive R ivie ra B each, F lorida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • O ff-L ine Inverters S w itchin g R egulators M otor C ontrols

Contextual Info: Micmsemi • m m a PPC, he. Progress Powered by Technology 7 51 6 C entral Industrial D rive R ivie ra B each, F lorida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • Deflection Circuits DC-DC Converters High Voltage Am plifiers

FF212R

Abstract: 4440 ic circuit diagram
Contextual Info: J J Ì H A R R I S I I R F F 2 R 1 R F 2 1 2 1 1 / / 2 R 1 / / 1 2 1 2 2 1 R 2 / / 2 2 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features • F Package T 0 -2 0 5 A F 1 .8 A a n d 2 .2 A , 1 5 0 V - 2 0 0 V BOTTOM VIEW • rD S o n = 1 -5 f l a n d 2 . 4 f l

series RESISTOR capacitor NETWORK

Contextual Info: April 1997 ML4866 3.3V Output D C-D C Step-Down Converter GENERAL DESCRIPTION FEATURES The ML4866 is a fully monolithic high efficiency pulse width modulated PWM buck regulator. The device switches at 120kHz and uses synchronous rectification to optimize power conversion efficiency. Unlike other

Contextual Info: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*

Contextual Info: MITSUBISHI Pch POWER MOSFET FX1UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX1 UMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 1.3 © O • 4V DRIVE ©GATE © D R A IN ©SOURCE o- • V ds s . -1 5 0 V

Contextual Info: MITSUBISHI Pch POWER MOSFET FX6SMJ-06 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 1 5 .9 m a x 1 .5 2 0 .0 50 A0 ^2 < > 3 .2 4 .4 1.0 © 5 .4 5 5 .4 5 0 .6 • 4 V D R IV E •V dss . - 6 0 V

IRF 4310

Abstract: ir 4310 IRF621R
Contextual Info: J2 H A R R IS IR F 620/621/6 2 2 /6 2 3 IR F620R /621R /622R /623R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 4.0A and 5.0A, 1S0V - 200V • •-D S o n = 0 . 8 0 a n d 1 . 2 f l DRAIN (FLANGE)

NE83Q93

Abstract: NE83Q94DK QQR471 QQT4712 ethernet transformer 10base-2 "Ethernet Transceiver"
Contextual Info: • bbsg^M o c m 7 ii iss « s i c s Philips Semiconductors Data Communications Products Preliminary specification Miniature coaxial Ethernet transceiver DESCRIPTION NE83Q94 PIN CONFIGURATION The NE83Q94 is a low power coaxial transceiver interface CTI for

NE8392CN

Abstract: heartbeat IN916 NE8392C NE8392CA AC DC transformer Philips ethernet serial converter "network interface controller"
Contextual Info: • bbSa^EM OCHMbMS 3S7 * S I C 3 Philips Semiconductors Data Communications Products Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION NE8392C PIN CONFIGURATION The NE8392C Coaxial Transceiver Interface CTI is a coaxial line

TXO-210

Abstract: E839
Contextual Info: Philips Sem iconductors Data C om m unications Products Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION NE8392C PIN CONFIGURATION The NE8392C Coaxial Transceiver interface CT! is a coaxial line driver/receiver for Ethernet (10base5) and Thin Ethernet (10base2)

f630

Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Contextual Info: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­

7652n

Abstract: 2n6766
Contextual Info: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l

MOSFET IRF 630

Abstract: IRF630 f630 IRF630R 633R
Contextual Info: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*

IF3J

Abstract: rst-5 xb SCL 1058 83CL782 Transistor BC 1078 80C51 P83CL781HFP transistor d 1825 7c
Contextual Info: b^E T> m NAPC/PHILIPS SEMICOND bbiBTEH 00=1203^ D3Q « S I C 3 Philips. Semiconductors Microcontroller Products Preliminary specification Low-voltage single-chip 8-bit microcontrollers GENERAL DESCRIPTION FEATURES The 83CL781 and 83CL782 are manufactured in an advanced CMOS

FS30SMJ-3

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SMJ-3 HIGH-SPEED SWITCHING USE FS30SMJ-3 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX 1.5 7 - 5.45 4V DRIVE V d s s . 1 5 0 V rDS ON (M AX). 8 6 m i2