10DC IR Search Results

10DC IR

Abstract: ir 10DC osram sylvania sylvania Sylvania OSRAM ML marking transistor 10dc ir 10dc ML/82x33/587/OS/G991Pv11
Contextual Info: Product Information Bulletin MARKERlight LED Rectangular Modules • Long life: Up to 100,000 hours • OSRAM Hyper SIDELED allows high luminous flux • Entire module consists of 8, 12 or 16 LEDs • Flat design — suitable for installation where space is limited

A 70083

Abstract: Sylvania OSRAM LM01A osram sylvania 5150 70008 LINEAR/610/OS/LM01A/O transistor 10dc ir OS-LM01A-B sylvania
Contextual Info: Product Information Bulletin LINEARlight LED Modules • Long life: Up to 100,000 hours • OSRAM Power TOPLED allows high luminous flux • ±60° viewing angle per LED • Entire module consists of 32 LEDs • Small height <5mm allows installation where space

osram sylvania

Abstract: LM01A Sylvania OSRAM sylvania sylvania led OSRAM IR LED Osram 10DC IR led osram green
Contextual Info: Product Information Bulletin LINEARlight LED Modules • Long life: Up to 100,000 hours • OSRAM Power TOPLED allows high luminous flux • ±60° viewing angle per LED • Entire module consists of 32 LEDs • Small height <5mm allows installation where space

Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

C401

Abstract: CY7C401 CY7C402 CY7C403 CY7C404 C4015 diode 10dc
Contextual Info: 02 CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)

C4016

Abstract: C4014 C401 diode CY7C404-25DMB C401 CY7C401 CY7C402 CY7C403 CY7C404 C4019
Contextual Info: 1CY 7C40 2 CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)

C401 diode

Abstract: 10DC IR transistor 10dc ir C4016 C4019 C401 CY7C401 CY7C402 CY7C403 C4013
Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)

Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR Features • Open emitter output for ease of memory expansion • 4096 x 4-bit organization • 4K x 4 ECL Static RAM • Industry-standard pinout Ultra high speed/standard power — t AA = 4, 5 ns Functional Description

7c403

Abstract: CY7C401 CY7C402 CY7C403 CY7C404 D015341 10DC IR 3 P
Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS Features 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO • Pin compatible with M M I 67401A/67402A • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) Functional Description

21 BU

Contextual Info: SN54AS821, SN54AS822, SN74AS821, SN74AS822 10-BIT BUS INTERFACE FLIP-FLOPS WITH 3 STATE OUTPUTS D 2 8 2 5 , DECEMBER 1 9 8 3 -R E V IS E D JA N U A R Y 1 9 8 6 S N 5 4 A S 8 2 1 . . J T PACKAGE S N 7 4 A S 8 2 1 . . . D W OR N T PACKAGE Functionally Equivalent to A M D 's A M 2 9 8 2 1

Contextual Info: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided

7C403-10PC

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS Features 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO • Pin compatible with M M I 67401A/67402A • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) • Processed with high-speed CMOS for

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 s CYPRESS SEMICONDUCTOR Cascadeable 64 x 4 FIFO and 6 4 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 and CY7C403 64 X 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO ) T he CY7C401 and CY 7C403 are asynchronousfirst-in first-out m em ories (F IF O s)

Contextual Info: 7 = CYPRESS -^= 'Jr SEMICONDUCTOR Features • Very high speed 256k SRAM module — Access time of 1 0 nsec. • 300-miI-wide hermetic DIP package • Low active power — 2.1W max. • SMD technology • TTL-compatible inputs and outputs • On-chip decode for speed and density

PAL22

Contextual Info: PAL22V10C PAL22VP10C CYPRESS SEMICONDUCTOR Universal PAL Device BiCMOS process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the familiar sum-of-products AND-OR log­ ic structure and a new concept, the pro­ grammable macrocell. • 10 user-programmable output

Contextual Info: PAL22V10CF PAL22VP10CF CYPRESS SEMICONDUCTOR • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — f\lA X = 100 MHz — Drives 50-pF load C l — 2 new feedback paths (PAL22VP10CF) • Synchronous PRESET, asynchronous

L22V10C-10PC

Contextual Info: PAL22V10C PAL22VP10C y CYPRESS Universal PAL Device B iC M O S process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the fam iliarsum -of-products A N D -O R logic structure and a new concept, the program ­ m able m acrocell. • 10 user-programmable output

ersa 111

Contextual Info: CYPRESS SEMI CONDUCTOR bSE D • HSf l TbbS QQI QMOI *CYP PAL22V10CF PAL22VP10CF CYPRESS SEMICONDUCTOR • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 n s — fltfAX = 100 MHz — Drives SO-pF load C l

Contextual Info: ADVANCE INFORMATION SN 54F280A, SN 74F2B0A 9 BIT PARITY GENERATORS/CHECKERS 0 2 9 3 2 , M AR C H 1 9 8 7 Generates Either Odd or Even Parity for Nine Data Lines SN 54F2B0A . . J PACKAGE SN 74F280A . . . D OR N PACKAGE TOP VIEW Cascadable for n-Bits Parity

Contextual Info: C iir s o v t;ik A » A SP7512and HS3120 * Corporation ▼ SIGNAL PROCESSING EXCELLENCE Double-Buffered 12-Bit Multiplying DAC • ■ ■ ■ ■ ■ ■ Monolithic Construction 12-B it Resolution 0.01% Non-Linearity Four-Quadrant Multiplication Latch-up Protected

P4C422

Contextual Info: PERFORMANCE SEUICONDUCTOR SOE D 70^53*17 G0G17bfl fiflT P4C422 ULTRA HIGH SPEED 256 x 4 CMOS STATIC RAM V ¿ ,-2 IPSC 3 . FEATURES • Fast Access Time —8,10,12,15, 25 ns Commercial —15, 20, 25 ns (Military) 5 V Power Supply ±10% for both commercial and

IR LFN

Abstract: CY7C161 CY7C162
Contextual Info: CYPRESS SEMI COND UCTOR MbE D H aSfl^bLE 5 I ICYP ODDbMM? Features • Automatic power-down when deselected • Transparent write 7061 • CMOS for optimum speed/power • Highspeed — 15 ns U a • Low active power — 633 mW ‘ • Low standby power

10DC

Abstract: TPIC6B259
Contextual Info: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 -A P R IL 1994 • Low r D s 0 n • • . 5 £ 2 Typical • Avalanche Energy . . . 30 mJ • Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current • • • • D w OR N p a c k a g e

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N S E OPT211 1 MONOLITHIC PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • WIDE BANDWIDTH, HIGH RESPONSIVITY: The O PT211 is a monolithic photodiode with on-chip FET-input transpedance amplifier, that provides wide