10DC IR Search Results

10DC IR

Abstract: ir 10DC osram sylvania sylvania Sylvania OSRAM ML marking transistor 10dc ir 10dc ML/82x33/587/OS/G991Pv11
Contextual Info: Product Information Bulletin MARKERlight LED Rectangular Modules • Long life: Up to 100,000 hours • OSRAM Hyper SIDELED allows high luminous flux • Entire module consists of 8, 12 or 16 LEDs • Flat design — suitable for installation where space is limited

A 70083

Abstract: Sylvania OSRAM LM01A osram sylvania 5150 70008 LINEAR/610/OS/LM01A/O transistor 10dc ir OS-LM01A-B sylvania
Contextual Info: Product Information Bulletin LINEARlight LED Modules • Long life: Up to 100,000 hours • OSRAM Power TOPLED allows high luminous flux • ±60° viewing angle per LED • Entire module consists of 32 LEDs • Small height <5mm allows installation where space

LM03A

Abstract: LED005R2 Sylvania OSRAM osram sylvania 10DC transistor 10dc ir OS-LM03A-B1 10DC IR
Contextual Info: Product Information Bulletin BACKlight LED Modules • Long life: up to 100,000 hours depending on color • OSRAM Power TOPLEDS allow high luminous flux • ±60° viewing angle per LED • Low profile <5mm allows installation where space is limited • Each module has 8 movable coupons connected

osram sylvania

Abstract: sylvania Sylvania OSRAM LM11A UV SideLED LED012 linear led Linear OEM 615 transistor 10dc ir
Contextual Info: Product Information Bulletin LINEARlight FLEX SIDELED Flexible LED Strip • Unique solution based on side emitting LEDs • Long life: Up to 100,000 hours • OSRAM Hyper SIDELED allows high luminous flux • ±60° viewing angle per LED • Entire strip consists of 300 LEDs

osram sylvania

Abstract: LM01A Sylvania OSRAM sylvania sylvania led OSRAM IR LED Osram 10DC IR led osram green
Contextual Info: Product Information Bulletin LINEARlight LED Modules • Long life: Up to 100,000 hours • OSRAM Power TOPLED allows high luminous flux • ±60° viewing angle per LED • Entire module consists of 32 LEDs • Small height <5mm allows installation where space

Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

C401

Abstract: CY7C401 CY7C402 CY7C403 CY7C404 C4015 diode 10dc
Contextual Info: 02 CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)

4025PC

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO CYPRESS Features • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in flrst-out memory (FIFO) • Processed With high-speed CMOS for optimum speed/power

C4016

Abstract: C4014 C401 diode CY7C404-25DMB C401 CY7C401 CY7C402 CY7C403 CY7C404 C4019
Contextual Info: 1CY 7C40 2 CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)

C401 diode

Abstract: 10DC IR transistor 10dc ir C4016 C4019 C401 CY7C401 CY7C402 CY7C403 C4013
Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)

7c401

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 PYPPFQ Q Cascadable 64 x 4 FIFO and 64 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in flrst-out memory (FIFO) • Processed with high-speed CMOS for

Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR Features • Open emitter output for ease of memory expansion • 4096 x 4-bit organization • 4K x 4 ECL Static RAM • Industry-standard pinout Ultra high speed/standard power — t AA = 4, 5 ns Functional Description

28D03

Abstract: CY10E484 HT12 WA 934 CY10E484L CY10E484L7JC decoder HT12
Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR 4K x 4 ECL Static RAM • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 4096 x 4-bit organization • Ultra high speed/standard power Functional Description — U a = 4, 5 n s

Contextual Info: CY101E484 CY10E484 CY100E484 r CYPRESS SEMICONDUCTOR Features 4K x 4 ECL Static RAM • Open emitter output for ease o f memory expansion 4096 x 4-bit organization • Industry-standard pinout Ultra high speed/standard power — tAA = 4, 5 ns — Ie e = 320 III A

7c403

Abstract: CY7C401 CY7C402 CY7C403 CY7C404 D015341 10DC IR 3 P
Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS Features 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO • Pin compatible with M M I 67401A/67402A • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) Functional Description

437q

Abstract: CY7C401 CY7C402 CY7C403 CY7C404 7C401 0G153
Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS Features • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) • Processed with high-speed CMOS for optimum speed/power • 25-MHz data rates • 50-ns bubble-through time—25 MHz

21 BU

Contextual Info: SN54AS821, SN54AS822, SN74AS821, SN74AS822 10-BIT BUS INTERFACE FLIP-FLOPS WITH 3 STATE OUTPUTS D 2 8 2 5 , DECEMBER 1 9 8 3 -R E V IS E D JA N U A R Y 1 9 8 6 S N 5 4 A S 8 2 1 . . J T PACKAGE S N 7 4 A S 8 2 1 . . . D W OR N T PACKAGE Functionally Equivalent to A M D 's A M 2 9 8 2 1

Contextual Info: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided

7C403-10PC

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS Features 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO • Pin compatible with M M I 67401A/67402A • 64 x 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) • Processed with high-speed CMOS for

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 s CYPRESS SEMICONDUCTOR Cascadeable 64 x 4 FIFO and 6 4 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 and CY7C403 64 X 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO ) T he CY7C401 and CY 7C403 are asynchronousfirst-in first-out m em ories (F IF O s)

7C402

Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 CYPRESS SEMICONDUCTOR Cascadable 64 x 4 FIFO and 6 4 x 5 FIFO Functional Description • 64 X 4 CY7C401 and CY7C403 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO) The CY7C401 and CY7C403 are asynch­

Contextual Info: 7 = CYPRESS -^= 'Jr SEMICONDUCTOR Features • Very high speed 256k SRAM module — Access time of 1 0 nsec. • 300-miI-wide hermetic DIP package • Low active power — 2.1W max. • SMD technology • TTL-compatible inputs and outputs • On-chip decode for speed and density

22V10C

Abstract: PAL22V10C-7DC
Contextual Info: — . _ PAL22V10C _ PAL22VP10C SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 6 ns — tsu = 3 ns — fMAX = 117 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­

MARKING DIAGRAM SOD-123

Contextual Info: WILLAS FM120-M THRU 150mA SMALL SIGNAL SWITCHING DIODE - 100V 1N4148M FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V200V DO-34 PACKAGE Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers