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Omega Engineering SCE-10N806LP NEMA TYPE 1 SINGLE-DOOR ELECTRICAL ENCLOSURES. SIZES FROM 6X6 TO 36X30. - Bulk (Alt: SCE-10N806LP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SCE-10N806LP	Bulk		3 Weeks	1	1 $148.19 10 $148.19 100 $148.19 1000 $148.19 10000 $148.19	Buy Now
Newark	SCE-10N806LP	Bulk			1	1 $148.19 10 $148.19 100 $148.19 1000 $148.19 10000 $148.19	Buy Now
onsemi FDBL0210N80 N-Channel PowerTrench? MOSFET, 80V, 240A, 2.0mO - Tape and Reel (Alt: FDBL0210N80)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FDBL0210N80	Tape & Reel		41 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $2.82	Buy Now
Mouser Electronics	FDBL0210N80		3,775			1 $6.12 10 $4.12 100 $3.68 1000 $3.39 10000 $3.39	Buy Now
Newark	FDBL0210N80	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $4.26	Buy Now
Rochester Electronics	FDBL0210N80		383,276		1	1 - 10 - 100 $2.88 1000 $2.58 10000 $2.42	Buy Now
TME	FDBL0210N80				2,000	1 - 10 - 100 - 1000 - 10000 $3.59	Get Quote

Avnet Silica	FDBL0210N80			42 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDBL0210N80			43 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FDBL0210N80		9,101			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Omega Engineering SCE-10N804LP NEMA TYPE 1 SINGLE-DOOR ELECTRICAL ENCLOSURES. SIZES FROM 6X6 TO 36X30. - Bulk (Alt: SCE-10N804LP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SCE-10N804LP	Bulk		3 Weeks	1	1 $151.28 10 $151.28 100 $151.28 1000 $151.28 10000 $151.28	Buy Now
Newark	SCE-10N804LP	Bulk			1	1 $151.28 10 $151.28 100 $151.28 1000 $151.28 10000 $151.28	Buy Now
Infineon Technologies AG SIPC10N80C3X1SA1 - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC10N80C3X1SA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIPC10N80C3X1SA1	Waffle Pack			369	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STP10N80K5 - Rail/Tube (Alt: STP10N80K5)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STP10N80K5	Tube		24 Weeks	1,000	1 - 10 - 100 - 1000 $1.44 10000 $1.42	Buy Now
TME	STP10N80K5		88		1	1 $2.14 10 $2.01 100 $1.47 1000 $1.47 10000 $1.47	Buy Now
EBV Elektronik	STP10N80K5			25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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10N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t qw-r502-218	PDF
10N80P Abstract: 10n80 IXFP10N80P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 10N80P IXFH 10N80P IXFP 10N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 10 A Ω 1.2 250 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	10n80p o-220 o-247 405b2 +210n80 ixfp10n80p	PDF
10n80 Abstract: 10n80p IXFC10N80P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 10N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 5 A ≤ 1.2 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol	Original	isoplus220tm 10n80p 10n80 ixfc10n80p	PDF
MOSFET 800V 10A TO-3P Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t qw-r502-218 mosfet 800v 10a to-3p	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t 10n80g-t3p-t 10n80l-tc3-t +210n8at qw-r502-218	PDF
10N80L Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t 10n80g-t3p-t 10n80l-tc3-t +510n80g-tc3ues qw-r502-218 10n80l mosfet 800v 10a to-3p mosfet 10a 800v high power	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Preliminary Power MOSFET 800 V N-CHANNEL MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l 10n80g 10n80-t3p-t +1qw-r502-218	PDF
mosfet 10a 800v Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t 10n80g-t3p-t 10n80l-tf1-t +710n80g-t qw-r502-218 mosfet 10a 800v mosfet 800v 10a to-3p mosfet 800v 10a 10n80l mosfet 10a 800v high power	PDF
10n80 Abstract: MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t 10n80g-t3p-t 10n80l-tf1-t +510n80g-tf1-tt qw-r502-218 mosfet 800v 10a to-3p mosfet 800v 10a mosfet 10a 800v high power	PDF
10N80 Abstract: MOSFET 800V 10A 10n8 mosfet 800v diode 218 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t 10n80g-t3p-t qw-r502-218 +4mosfet 800v 10a 10n8 mosfet 800v diode 218	PDF
MOSFET 800V 10A TO-3P Abstract: 10n80 mosfet 337 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l-t3p-t 10n80g-t3p-t 10n80l-tf1-t +410n80g-tf1ues qw-r502-218 mosfet 800v 10a to-3p mosfet 337	PDF
10n80 Abstract: MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	10n80 10n80l 10n80g 10n80-t3p-t +6qw-r502-218 mosfet 800v 10a mosfet 800v 10a to-3p 10n80 transistor vdd400 mosfet 10a 800v	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
40n80 Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A Contextual Info: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750	OCR Scan	10n60 20n60 31n60 30n60 +1538n60 40n60 60n60 10n100 17n100 25n100 40n80 ixgh40n60 12n60u1 40n80a 50n60au1 20n60 igbt igbt 20n60 60n60 ixgh ixga24n60a	PDF

10N80 Search Results

10N80 Price and Stock

Omega Engineering SCE-10N806LP

onsemi FDBL0210N80

Omega Engineering SCE-10N804LP

Infineon Technologies AG SIPC10N80C3X1SA1

STMicroelectronics STP10N80K5

10N80 Datasheets Context Search

10N80P

10n80

MOSFET 800V 10A TO-3P

10N80L

mosfet 10a 800v

10n80

10N80

MOSFET 800V 10A TO-3P

10n80

7N60B equivalent

40n80