10N80 Search Results
10N80 Price and Stock
Cyg Wayon Circuit Protection Co Ltd WMK10N80M3Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3 |
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WMK10N80M3 | 417 | 1 |
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Cyg Wayon Circuit Protection Co Ltd WML10N80M3Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP |
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WML10N80M3 | 368 | 1 |
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IXYS Corporation IXFP10N80PTransistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB |
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IXFP10N80P | 293 | 1 |
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IXFP10N80P | 291 |
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IXFP10N80P | Tube | 300 |
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IXYS Corporation IXFA10N80PTransistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 |
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IXFA10N80P | 257 | 1 |
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IXFA10N80P | 8,544 |
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IXFA10N80P | Tube | 300 |
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IXYS Corporation IXFH10N80PTransistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFH10N80P | 251 | 1 |
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IXFH10N80P | 266 |
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IXFH10N80P | Bulk | 24 | 1 |
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IXFH10N80P | Tube | 240 | 30 |
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10N80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is |
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10n8010n80l-t3p-tqw-r502-218 | |
10N80P
Abstract: 10n80 IXFP10N80P
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10n80po-220o-247405b2+2 | |
10n80
Abstract: 10n80p IXFC10N80P
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isoplus220tm10n80p10n80ixfc10n80p | |
MOSFET 800V 10A TO-3PContextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is |
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10n8010n80l-t3p-tqw-r502-218mosfet 800v 10a to-3p | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is |
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10n8010n80l-t3p-t10n80g-t3p-t10n80l-tc3-t+2 | |
10N80L
Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
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10n8010n80l-t3p-t10n80g-t3p-t10n80l-tc3-t+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Preliminary Power MOSFET 800 V N-CHANNEL MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is |
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10n8010n80l10n80g10n80-t3p-t+1 | |
mosfet 10a 800v
Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
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10n8010n80l-t3p-t10n80g-t3p-t10n80l-tf1-t+7 | |
10n80
Abstract: MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power
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10n8010n80l-t3p-t10n80g-t3p-t10n80l-tf1-t+5 | |
10N80
Abstract: MOSFET 800V 10A 10n8 mosfet 800v diode 218
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10n8010n80l-t3p-t10n80g-t3p-tqw-r502-218+4 | |
MOSFET 800V 10A TO-3P
Abstract: 10n80 mosfet 337
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10n8010n80l-t3p-t10n80g-t3p-t10n80l-tf1-t+4 | |
10n80
Abstract: MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v
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10n8010n80l10n80g10n80-t3p-t+6 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 | |
40n80
Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
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OCR Scan |
10n6020n6031n6030n60+15 | |
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