106PS Search Results

Valox 420-SEO

Abstract: "valox 420 seo" valox 420 seo 106psi 280OC valox 420 420seo samtec 400o
Contextual Info: Valox 420-SEO - Mechanical @ 73o F 23o C - Tensile Strength at Break:17 (117) x 103 psi (MPa) - Tensile Modulus: 1.1 x 106psi - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 400o F (204oC) - Melting Point: 536oF (280oC)XXXXX - Electrical - Volume Resistivity: 3.4 x 1015 ohm-cm

280OC

Contextual Info: Valox DR-48 - Mechanical @ 73o F 23o C - Tensile Strength at Break:13.5 (93) x 103 psi (MPa) - Tensile Modulus: .73 x 106psi - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 360o F (182oC) - Melting Point: 536oF (280oC)XXXXX - Electrical - Volume Resistivity: 3.6 x 1016 ohm-cm

106psi

Contextual Info: Vecta E130 - Mechanical @ 73o F 23o C - Tensile Strength at Break:18 (124) x 103 psi (MPa) - Tensile Modulus: 2.0 (14) x 106psi (Gpa) - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 518o F (270oC) - Melting Point: 670oF (355oC) - Electrical

ABT22V10-7A

Abstract: ABT22V10-7D ABT22V10-7N
Contextual Info: PROGRAMMABLE LOGIC PRODUCTS A B T 2 2 V 1 0 -7 c o m m e r c ia l A B T 2 2 V 1 0 A /B (MILITARY) Low noise, high drive, metastable immune, PLD Product specification (Commercial) Preliminary specification (Military) April 22, 1994 March 1994 Philips Semiconductors

S1D15719

Abstract: S1D15722D01B S1D15719D22B S1D15714D01E s1d13517 S1D15722 Matrix CCD "line sensor" Epson epd driving S1D15712 S1D15721D01B
Contextual Info: CMOS LSIs Product Catalog 2009 SEIKO EPSON CORPORATION CMOS LSIs Contents Configuration of product number . 2 1 ASICs Application Specific IC 1-1 Gate Arrays . 4

S1L50552

Abstract: tcon mini-lvds EPSON tcon S1X65263 tcon 17 epson s1k500 SMART ASIC 197 S1K60000 S1L50062 UXGA tcon
Contextual Info: ASICs Gate Arrays / Embedded Arrays / Standard Cells 2010 Our goal in the Epson Semiconductor Operations Division is to be a true partner for you, by looking to give you an edge in product development through our concept of "+less design". Gate Arrays / Embedded Arrays / Standard Cells

EDE5108AJSE-6E-E

Abstract: EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  32M words × 4 bits × 4 banks (EDE5104AJSE)

DDR2-667

Abstract: DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18
Contextual Info: PRELIMINARY DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in

DDR2-667

Abstract: EDE5104AJSE-8E-E udqs
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2-667

Abstract: DDR2-800 EDE1108ACSE-6E-E
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EDE5116AHSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)

DDR2-667

Abstract: EDE5104AJSE-8E-E EBE10AD4AJFA-6E-E max1546
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AJFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

ASFLMB

Abstract: ASDMB
Contextual Info: Accelerate the speed of circuit design.Oscillators in seconds, not days! The MEMSpeed Pro oscillators operate down to 4mA with 1uA standby current! Introducing the MEMSpeed Pro, Low Power Oscillator Programmer. The Oscillator Programming Kit includes all hardware and software necessary for the user to easily program custom oscillator

Contextual Info: DATA SHEET 1G bits DDR2 SDRAM EDE1108AJBG-1 128M words x 8 bits EDE1116AJBG-1 (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDE1108AJBG)  8M words × 16 bits × 8 banks (EDE1116AJBG)

DDR2-667

Abstract: DDR2-800
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACWB 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2 DIMM 240 pin names

Abstract: DDR2-667 EDE5104AJSE-8E-E EBE21AD4AJFA-6E-E EBE21AD4AJFA 2843ps
Contextual Info: DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2-667

Abstract: EDE1108ACSE-6E-E
Contextual Info: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE42AE8ACFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

E0901E20

Abstract: EBE41AE4ABHA DDR2-667
Contextual Info: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE41AE4ABHA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package: 240-pin socket type dual in line memory

EDE1116ACSE-6E-E

Abstract: DDR2-667 DDR2-800 EDE1116ACSE-8E-E DDR2 sodimm pcb layout
Contextual Info: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UE6ACSA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in

EDE1108AFBG

Abstract: EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1108AFBG 128M words x 8 bits Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks • Package  60-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V

E1060E20

Abstract: EDE1108ACSE-6E-E DDR2-667 DDR2-800 EBE21EE8ACFA-8G-E
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21EE8ACFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

E1296E40

Abstract: DDR2-800 EBE21UE8AEFA-8G-F
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8AEFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EDE5116AJBG-6E-E

Abstract: EDE5116AJBG-8E-E EDE5116AJBG DDR2-667 DDR2-800 EDE5108AJBG EDE5108AJBG-6E-E EDE5108AJBG-8E-E EDE5116AJBG-8E ELPIDA DDR2 SDRAM
Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5108AJBG 64M words x 8 bits EDE5116AJBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks (EDE5108AJBG)  8M words × 16 bits × 4 banks (EDE5116AJBG)

DDR2-667

Abstract: EDE5116AJBG
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM WTR Wide Temperature Range EDE5116AJBG-LI (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package  84-ball FBGA  Lead-free (RoHS compliant)