182OC Search Results

280OC

Contextual Info: Valox DR-48 - Mechanical @ 73o F 23o C - Tensile Strength at Break:13.5 (93) x 103 psi (MPa) - Tensile Modulus: .73 x 106psi - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 360o F (182oC) - Melting Point: 536oF (280oC)XXXXX - Electrical - Volume Resistivity: 3.6 x 1016 ohm-cm

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

Contextual Info: FDMJ1023PZ tm Dual P-Channel PowerTrench MOSFET –20V, –2.9A, 112mΩ Features General Description ̈ Max rDS on = 112mΩ at VGS = –4.5V, ID = –2.9A This dual P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. This device is designed

FDMJ1023PZ

Abstract: SC-75
Contextual Info: FDMJ1023PZ tm Dual P-Channel PowerTrench MOSFET –20V, –2.9A, 112mΩ Features General Description „ Max rDS on = 112mΩ at VGS = –4.5V, ID = –2.9A This dual P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. This device is designed

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

FDMJ1032C

Abstract: marking 032 SC-75 Dual N & P-Channel
Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement

Contextual Info: FDFMJ2P023Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode tm –20V, –2.9A, 112mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other

schottky diode 100A

Abstract: FDFMJ2P023Z SC-75 marking p23
Contextual Info: FDFMJ2P023Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode tm –20V, –2.9A, 112mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other

intel 8288

Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
Contextual Info: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or

HX8347-G

Contextual Info: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver