1012 NPN Search Results

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

AD737

Abstract: AD7136 AD736 AD737A AD737AQ AD737B AD737J AD737K precision FULL WAVE RECTIFIER supply CA3046 equivalent
Contextual Info: a FEATURES Computes: True rms Value Average Rectified Value Absolute Value Provides: 200 mV Full-Scale Input Range Larger Inputs with Input Attenuator Direct Interfacing with 3 1/2 Digit CMOS A/D Converters High Input Impedance of 1012 ⍀ Low Input Bias Current: 25 pA Max

transistor 1012

Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor master replacement guide

Abstract: z8051 2N2222A npn transistor DS2417 equivalent AN033 project on digital thermometer AN0346-SC01 AZ8051
Contextual Info: Application Note Using a Z8051 UART to Implement a 1-Wire Master with Multiple Slaves AN034601-1012 Abstract This application note describes how to use the UART peripherals in Zilog’s family of Z8051 MCUs as 1-Wire bus Masters. Also described are the required electrical interface,

BFR38

Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022

2SC3089

Abstract: en1012a EN10-12 high voltage fast switching npn 4A
Contextual Info: Ordering number:EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3089] 1 : Base

SLA8001

Contextual Info: SLA8001 PNP + NPN H-bridge External dimensions A Absolute maximum ratings SLA 12-pin (Ta=25°C) Ratings Symbol NPN PNP Unit VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 12 –12 A IB 3 –3 A 5 (Ta=25°C) PT W 40 (Tc=25°C) VISO ••• 1000 (Between fin and lead pin, AC)

SLA8001

Contextual Info: SLA8001 PNP + NPN H-bridge External dimensions A Absolute maximum ratings SLA Ta=25°C Ratings Symbol NPN PNP Unit VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 12 –12 A IB 3 –3 A 5 (Ta=25°C) PT W 40 (Tc=25°C) VISO ••• 1000 (Between fin and lead pin, AC)

Contextual Info: Ordering number:ENN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3089] 15.6

2SC4215

Contextual Info: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)

npn 1000V 100a

Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
Contextual Info: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T | TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching

2SD1555

Abstract: 2SD1555 equivalent
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE CO LO R TV H O R I Z O N T A L O U T P U T A P P L I C A T I O N S . FEATURES: . High Voltage :Vggo= T500V . Low Saturation Voltage: . High Speed sat = 5V(M a x .)(Ic=4A , I b = 0 .8A) :tf = 1.0(js(Max .) . Built-in Damper Type

Contextual Info: FMC2 S "7 > i/ Z £ /'T ra n s is to rs I t ^ J r - > 7 ^ 7 ' L / - t f a 7 ; ^ - :E - ^ K PNP/NPN y ' J a > ^ > v / • • 7 ,>f y-?-[el?&/Switching Circuit Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor IV I\# i6 • $\-M T H iE I/D im e n s io n s U nit : mm

t149

Abstract: T148 Transistor BFT 10
Contextual Info: h7 £ /T ra n sisto rs • — FM C2 — E T G UI éT* 9 ■ I w f l \ j é £ê -7= * ? - 9£ ? . i t r 4»+>r j .t j i § k pnp/npn *>y m v *E& /Sw itch ln g Circuit Epitaxial Planar Dual Mlnl-Mold PNP/NPN Silicon Transistor • Wft 3 > b ? > $>x *

darlington NPN 600V 20a transistor

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1} MP6005 ° HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS ° MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation. (SIP 14 Pin

NTE3086

Contextual Info: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.

Contextual Info: 7 f l 2 ô cl cn MQE D ROHM CO L T D G00tj31D T IRHM FMC2 h 7 > y X $ /T ran sisto rs 7 ^ 4 3 -9 0 I t : ^ d r ' > r ^ 7 V - ^ T i a 7 7; U § - ;E - ^ K PNP/NPN y U □ > h 7 > V «y^üliS/Switching Circuit Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor

BFQ32M

Abstract: of bfq63 BFQ63 transistor 643
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the

B4150

Abstract: 15B41 WF-120 2B42 15b415 2b415
Contextual Info: WF Highlights Fork Sensors DC IR • Perfect for label detection and mark detection • PNP and NPN in the same switch 0.08.4.7 2.120 mm • Light or dark switching sensing range/fork width • Rugged aluminum housing WF Dimensional Drawing • Sensitivity adjustment

2222a

Abstract: tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL MPQ2222 2N/PN2222
Contextual Info: National Semiconductor PN2222 PN2222A 2N2222 2N2222A MMBT2222 MMBT2222A MPQ2222* T O - 1 16 TO- 9 2 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 T L /G /10100-1 NPN General Purpose Amplifier Electrical Characteristics T a

2N697

Abstract: 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N
Contextual Info: NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TRANSISTORS NPN SILICIUM PLANAR EPITAXIAUX , LF amplification Amplification BF 40 V V CER Switching Commutation ^21E fT Maximum power dissipation Dissipa tion de puissance maximale iti A 12 0 - 6 0

D44h7

Abstract: D44H12
Contextual Info: 3875081 G E SOLID _ STATE- DI n 1C 1 QHAf i DE 1 3 ñ 7 S D ñ l □□nDñfe, h i " D44H Series NPN POWER TRANSISTORS 30 -8 0 VOLTS 10 AMP, 50 WATTS >COMPLEMENTARY TO THE D45H SERIES The General Electric D44H is a power transistor designed for various specific and general purpose applications, such as:

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU4422 PU3122 PU4122
Contextual Info: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B