100XL Search Results

AN7114

Abstract: schematic diagram tv panasonic 00365 r PO 168 AN71 AN711 audio power amplifier circuit
Contextual Info: A N 7114 t V T T H IIC A N 7 1 14 W Audio P o w e r Amplifier Circuit I M ^ /D e sc rip tio n AN 7114 l ± , W Ü 1 Œ 6 V , Unit ; mm t « 4ii t l W - r - i - 6 .5 m a x . * < 5 .0 8 m a x . 2 .8 m in . , K Y l - t i : ¿•«ÎÜÎïlîCfcHST-t'o ■ Îrf

Contextual Info: Power Transistors ^32052 2SD1535 001 b?sa 4 b0 2SD1535 Package Dim ensions Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier U nit 1 mm 4.4max. 10.2max. 5.7max. 2.9max = bF • Features \ • V e ry g o o d lin e a r ity o f D C c u r r e n t g a in I i f f

m16jz47

Abstract: M16GZ47 m16gz 16jz47 16GZ47 M16G 16gz SM16JZ47 SM16GZ47 SM16GZ47A
Contextual Info: TO SH IBA SM 16GZ47,SM 16JZ47#SM 16GZ47A#SM 16JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR S M 1 6 G Z 4 7 , S M 1 6 J Z 4 7 , AC POWER CONTROL APPLICATIONS S M 1 6 G Z 4 7 A , Repetitive Peak Off-State Voltage V D R M = 400, 600V • R.M.S On-State C urrent

overcurrent relay inverse

Abstract: IEC 255-3 rxidf2h B03-2210E protection relay type racic racic 024bb 123-ABA transformer 330 MVA B03-7210E
Contextual Info: A S p Sp _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ASEA BROWN BOVERI « ,« , _ Type RACIC B03-7210 Feeder protection January 1985 Changed since May 1983

Capacitive voltage transformer

Abstract: BROWN BOVERI Relay manual LG MOTHERBOARD CIRCUIT DIAGRAM BROWN BOVERI DISTANCE RELAYS ABB Reverse Power Relay ABB CT REZ1 RLKA050 c37.90a Fuse failure relay
Contextual Info: là » 1 1 A » » ASEA BROWN BOVERI ABB Relays Abstract Type REZ 1 A full schem e phase and ground distance relay for transm ission lines and cables B03-7018E Page 1 March 1989 Changed since January 1987 Data subject to change without notice • Simultaneous phase and ground distance measu­

y9w marking

Abstract: 2SB751 2SB759A 2SD837 2SB759 2sd837a 2SB751A ULN pnp vc2545 Si PNP Epitaxial Planar Darlington
Contextual Info: PANASONIC INDL/ELEK-CSENI} h ^ y V T S _ 7SC D | bT3 2 flS4 " 7 ^ 3 3 > T L e7 □ □□flat.D □ 2SB751, 2SB751A 2SB751, 2SB751A > ij =i v P N P x UV h Si P N P Epitaxial Planar Darlington JbZ fi'— i-J& jr— i&mi&WtlMtyi f f l / A F Power Amplifier

KTB989

Abstract: KTD1352
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

U501

Abstract: g1244 ECG1244
Contextual Info: PHILIPS E C G INC 17E ECG □ • ^53=120 00D4?aa L> ■ T-74-Û5-01 ECG1244 AU DIO POW ER A M P Sem ico n du ctors E C G 1244 is a lin e a r integrated c ir c u it designed for use as a 4 W att A u d io Power A m p lifie r. A B S O LU T E M A X I M U M R A T IN G S

SF10J41

Contextual Info: SF10G41 A,SF10J41A TO SHIBA SF10G41A, SF10J41A T O SH IB A TH YR ISTO R SILICON D IFFUSED TYPE Unit in mm M E D IU M P O W E R CO N TRO L A PPLIC A TIO N S. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current

F25JZ51

Abstract: TOSHIBA Thyristor F25JZ51 F25GZ51
Contextual Info: T O SH IB A SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF25GZ51, SF25JZ51 Unit in mm M EDIUM PO W ER CONTROL APPLICATIONS. 15.8 ± 0.5 • Repetitive Peak Off-State Voltage V d rm \ =400> 600y Repetitive Peak Reverse Voltage V r r m J • Average On-State Current

Contextual Info: T O SH IB A SF10GZ47,SF10JZ47 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF10GZ47, SF10JZ47 M EDIUM PO W ER CONTROL APPLICATIONS • • • U nit in mm 1 0 .3 M A X Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State C urrent Isolation Voltage

Contextual Info: T O S H IB A SF5G41 A,SF5J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G41A, SF5J41A Unit in mm M EDIUM PO W ER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d rm y V rrm J • Average On-State Current :T AV = 5A

Contextual Info: T O SH IB A SM 16G45,SM 16J45,SM 16G45A,SM 16J45A TO SHIBA BI-DIRECTIO NAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G45, SM16J45, SM16G45A, SM16J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage R.M.S On-State Current

Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 7 <; A Q A H A Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 101 0.3 • ^3.2 ±0.2 2_,7±g Complementary to 2SC2073A MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING

F10JZ47

Abstract: F10GZ47 Toshiba D-125 F10J SF10GZ47 SF10JZ47 K1012
Contextual Info: TOSHIBA S F 1 0 G Z 4 7 #SF10JZ 47 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF10GZ47, SF10JZ47 MEDIUM POWER CONTROL APPLICATIONS • U nit in mm 10.3MAX Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State C urrent Isolation Voltage

Contextual Info: SF10G41 A,SF10J41A TOSHIBA T O SHIBA THYRISTOR SILICON DIFFUSED TYPE SF10G41A, SF10J41A Unit in mm M E D IU M POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current •

HP3330B

Contextual Info: SILICONIX INC 03 8254735 SILICONIX DiEJ ÛBS4735 0015H40 1 INC 03E 12240 DG400-405 Low-Power - High-Speed CMOS Analog Switches j y Silîconlx Incorporated T-51-11 FEATURES BENEFITS APPLICATIONS • +15. V Input Range • Wide Dynamic Range • ON Resistance < 35 Cl

2SD1774

Abstract: 2SD1774A LTO 100 F
Contextual Info: Power Transistors 2SD1774, 2SD1774A 2 S D 1 7 7 4 , 2SD1174A Silicon N P N Trip le-D iffu sed Planar Type High DC C urrent Gain Package D im ensions Power A m plifier Ii f e , U n it ! mm • Features 10-5 ± 0 ,5 • High DC current gain (hFE) s • Good linearity of DC current gain

Sn60Pb40

Abstract: SMD 5AG SnBiAg nortel capacitor nokia 1325 smd 100mF 6.3V SMT roadmap pure tin recommended reflow profile Hypertension nokia reflow
Contextual Info: TECHNICAL INFORMATION LEAD-FREE SOLDERING EFFECT ON TANTALUM CAPACITORS T. Zednicek, P. Vasina, Z. Sita, B. Vrana AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic LEAD-FREE SOLDERING EFFECT TO TANTALUM CAPACITORS T. Zednicek, P. Vasina, Z. Sita, B. Vrana

1012 TOSHIBA

Abstract: 2sc2562 2SA1012 A101 AC75
Contextual Info: TO SH IBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 012 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm jZ>3.6±0.2 .1 0 .5 MAX Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max.) at I q = - 3 A

Contextual Info: T O S H IB A SF5G41 A,SF5J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G41A, SF5J41A U nit in mm M EDIUM PO W ER CONTROL APPLICATIONS. • 10.3MAX. Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d r m y =400> 600y V rrm J • Average On-State C urrent

XC17S00

Abstract: XC17S05 XC17S05XL XC17S100XL XC17S50XL xilinx 8 pin dip S40XL
Contextual Info: XILINX PROGRAMMER QUALIFICATION SPECIFICATION XC17S00 & XC17S00XL Family Description The Spartan Family of Serial Configuration PROMs provide easy-to-use, cost-effective configuration memory for Xilinx Field Programmable Gate Arrays. These devices use a simple serial-access procedure

Contextual Info: b b S B ^ l 002b2^2 APX 101 BAV10 N AMER PHILIPS/DISCRETE ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories. QUICK REFERENCE DATA

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes