002B2 Search Results

Contextual Info: b b S B ^ l 002b2^2 APX 101 BAV10 N AMER PHILIPS/DISCRETE ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories. QUICK REFERENCE DATA

philips esi

Abstract: BAS81 BAS82 BAS83
Contextual Info: • Philips Components Data sheet status Prelim inary specification date of Issue April 199 2 ^53*131 002b245 3^5 H A P X BAS81/82/83 Schottky barrier diodes N AUER PHILIPS/DISCRETE DESCRIPTION General purpose and switching Schottky barrier diodes, with an

BFQ10

Abstract: 718s
Contextual Info: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

Contextual Info: B U R R -B R O W N | e =» b M OPA6Q4 FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: 0.0003% at 1kHz • LOW NOISE: 10nVWfiz • PROFESSIONAL AUDIO EQUIPMENT • PCM DAC l/V CONVERTER • HIGH SLEW RATE: 25V/us

Contextual Info: B U R R -B R O W N I B B INA116 I Ultra Low Input Bias Current INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • LOW INPUT BIAS CURRENT: 3fA typ The ENA116 is a complete monolithic FET-input instru­ mentation amplifier with extremely low input bias cur­

Contextual Info: TOSHIBA TC551001BPL/BFL/BFTiyBTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with, an operating cur­

Contextual Info: TOSHIBA TC551001APL/AFL/AFIL/ATRLr70]V85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­

bfs21

Abstract: BFS21A SOT-52 sot52 BF* N-Channel
Contextual Info: PHILIPS INTERNATIONAL 41E D m 711QflSb QOELEB11 ö BHPHIN BFS21 BFS21A T - 2 7 -2 5 ~ MATCHED N-CHANNEL FETS Matched pair of symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.

Contextual Info: w GEC PLE SS EY OCTOBER 1993 S E M I C O N D U C T O R S MV1442 HDB3 ENCODER/DECODER/CLOCK REGENERATOR Supersedes June 1993 edition The MV1442, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702M 4LXXXGP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • W id e op erating te m p e ra tu re ra n g e . — 4 0 ~ 8 5 ‘C m icro­ • In te rru p ts . •.

Contextual Info: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer. Using a high performance Bi-CMOS process, the product

IA35

Abstract: CDM62256
Contextual Info: HA RR IS S E M I C O N D S E C T O R m 3 7 ^ ] M 3 0 5 27 1 D02b2S3 T BiHAS High-Reliability CMOS LSI — CDM 62256C/3 Advance Information - Wl High-Reliability CMOS 32,768-Word By 8-Bit LSI Static RAM

Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

Contextual Info: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated

SE050A

Contextual Info: AT&T Preliminary Data Sheet SE050A Power Module; 48 Vdc Input, 5 Vdc Output, 50 W Features • Small size: 2.30 in. x 3.35 in. x 0.75 in. ■ Output current limiting; unlimited duration ■ Output overvoltage clamp: V0 < 7 V ■ Complete input and output filtering

Contextual Info: MITSUBISHI MICROCOMPUTERS M37702M2LXXXGP.M37702S1LGP M 37702M 2LXXXHP,M 37702S1LHP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER APPLICATION DESCRIPTION The M 37702M 2LXXXG P is a s in g le -c h ip 16 -bit m ic ro ­ C ontrol d e vice s for com m unication eq u ip m e n t such as

b10 45g

Abstract: RBL 43 P 530 SE 610 108 001 LCC18 MA27 DP83846AVHG HD6417618 SH7618 RESISTOR 472 j TRW catalogue
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R5F21368snfp

Abstract: 06B2D 0025DH 00285H
Contextual Info: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

06B2D

Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

06B2D

Abstract: p9530 0023AH 0025DH 00285H
Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

R5F21368snfp

Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

ras33

Contextual Info: H M 5 1 4 1 O O C /C L S e r ie s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory Rev. 0.0 Jun. 27,1994 HITACHI The Hitachi HM514100C is a CMOS dynamic RAM organized 4,194,304 words x 1 b its. HM514100C has realized higher density, higher performance and various functions by employing

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702M 6BXXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • S in g le p o w e r s u p p ly .5 V ± 1 0 % T h e M 3 7 7 0 2 M 6 B X X X F P is a s in g le -c h ip m icro com puter d e ­