IDT6168LA Search Results

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

idt6168sa

Abstract: IDT6168 6168LA45
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

5962-86705

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

3090

Abstract: IDT6168 IDT6168LA IDT6168SA
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

Contextual Info: INTEGRATE] D E V I C E 3ÔE D • 4 Ô 2 5 7 7 1 OQGfilbl =1 ■ CMOS STATIC RAM 16K 4Kx 4-BIT) IDT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.)

1DT6168SA

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

DSC1121

Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 2 /1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.) — Com mercial: 1 0 /1 2 /1 5/2 0 /2 5 /3 5 n s (max.)

d1994

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed {equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.) — Com mercial: 15 /20/2 5/35 n s (m ax.) • Low power consumption

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

M5768

Abstract: hyundai HM6268P-45 HM65681-2 HM65681B-5 HM65681S-2
Contextual Info: - 40 - 16 K X i-âlÎicffl Si £ it £ OC TAAC nax ns) TCAC max (ns) HM6268P-45 HITACHI 0— 70 45 45 HM65681-2 MHS -55— 125 85 85 TOE max (ns) -/ TOH nin (ns) CMOS y * TOD nax (ns) y S t a t i c RAM (4 0 9 6 x 4 ) ft & T W n in (ns) TDS min (ns) 2 0 P I N 6 1 6 8

CRM1076DJ

Abstract: ICS954123BFLF ICS671GI-16LF ICS954148AFLF IDT5V5218PGGI crm 1066c ics633 IDTQS5V993-5QI ics954148af ICS950913CF
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0704-01 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 4/30/2007 SOIC, TSSOP, SSOP, QSOP, MLF, PDIP

2Y202

Abstract: dt6168 1N12J
Contextual Info: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m ­

IDT71256SA20TP

Abstract: TB-0504-01 IDT2305-1DCG IDTQS3VH125S1G IDT71256SA15TPI IDT74FCT164245TPVG IDT74FCT163245CPA idt71256sa15tp IDT71256SA15YG IDT71256SA25TPI
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: PCN #: TB-0504-01 Product Affected: Please see attachment 5/2/2005 Date Effective: 5/2/2005 Contact: Geoffrey Cortes Title: Manager, Corporate Quality & Reliability

IDT6168LA

Contextual Info: CMOS STATIC RAM 16K 4KX 4-BIT IDT 6 I 68 SA IDT6¿68LA FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-bit h ig h -s p e e d sta tic RAM organized as 4K x 4. It Is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-rellability te c h n o lo g y — C EM O S . T h is state-of-the-art te c h n o lo g y , c o m ­

diode cross reference

Abstract: IDT6168LA55LB CY7C186A-45DMB IDT CROSS REFERENCE LOGIC CY7C128A-25DMB IDT71256L45L32B IDT6168LA70LB cross reference CY7C024-55AC CY7C433-25JC
Contextual Info: IDT/Cypress Product Cross Reference FIFOs FIFOs FIFOs CYPRESS IDT CYPRESS IDT CYPRESS CY7C419-10PC IDT7203L50P CY7C428-20PC IDT7205L50J CY7C460A-25JC IDT7200L12J CY7C419-10JC IDT7203L12P CY7C429-10PC IDT7206L15P CY7C462A-15PC IDT7200L15TP CY7C419-10PC IDT7203L12TP