100SJ Search Results

Contextual Info: * L O W -R O W ER 9-BP SY N E R G Y S Y 100SJ21 IN VER TER S E M IC O N D U C T O R F EA TU R E S D E S C R IP TIO N • Max. propagation delay of 700ps The SY100S321 is a monolithic 9-bit inverter. The device contains nine inverting buffer gates with single

3551S-1-203

Abstract: MIL-E-5272 3551S-1-502 BOURNS POTENTIOMETERS Model 580 Potentiometers MIL-R-39023 3551S 3551S-1-102 MILR39023
Contextual Info: PRECISION POTENTIOMETER FEATURES U niqu e IN F IN IT R O N co nd u ctive plastic e le m e n t provides essen tially in fin ite resolution. R otational life: 10,000,000 sh a ft revolutions. S tan dard L in earity 0 .5 % . S pecial lin e a ritie s av a ila b le .

TEA5702

Abstract: h2 transistor
Contextual Info: Æ 7 SCS-THOM SON * 7 1 TEA5702 R fflQ [S © iQ 3l l g i r ^ ( Q K i Q ( g i ADVANCED 2-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA PLAY-BACK MODE - LOW NOISE AND WIDE BAND AMPLIFIERS FOR 2 HEADS • AUTOMATIC OFFSET CANCELLATION BE­ TWEEN THE 2 SELECTED HEADS

Contextual Info: 2N2323-2N2329, J, JTX, JTXV 2N2323A-2N2328A, J, JTX, JTXV 2N2323S-2N2329S, J, JTX, JTXV 2N2323AS-2N2328AS, J, JTX, JTXV SCRs 1.6 Amp, Planar FEATURES • Available as JAN, JANTX, & JANTXV Types • JAN Types Available in TO-5 • 1.6A D.C. Current • Peak Currents: to 30A

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

DIODE 1B

Abstract: 7B282 H11AC3
Contextual Info: G en eric O p toisolator Specification s MCT2, MCT2E, MCT26 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e M CT2, M CT2E a n d M C T26 are gallium arsen id e, in frared em itting diode coupled with a silicon phototransistor

Contextual Info: m HARRIS HFA1212/883 S E M I C O N D U C T O R Dual, High Speed, Low Power, Video Closed Loop Buffer PRELIMINARY June 1994 Description Features This Circuit Is Processed In Accordance to MIL-STD883 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1.

X3483

Abstract: MAX3491 ic max3485
Contextual Info: 19-03 3 3 ; R e v 0; 12/94 3 .3 V -P o w e r e d , 1 0 M b p s a n d S le w -R a te -L im ite d t r u e R S -4 8 5 /R S -4 2 2 T r a n s c e iv e rs Drivers are short-circuit current limited and are protect­ ed a g a in s t e x c e s s iv e p o w e r d is s ip a tio n by th e rm a l

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage

Contextual Info: FEB 3 1995 16-Bit 100 kSPS Oversampling ADC AD776 ANALOG ► DEVICES FEATURES Monolithic 16-Bit Sigma-Delta ADC Third-Order Noise Shaping 96 dB Dynamic Range 90 dB SNR 16-Bit 100 kHz Output from FIR Filter 12-Bit 400 kHz Output from Comb Filter No Missing Codes

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only i ADVANCED INFORMATION S U B JE C T TO CH ANCE FEATU R ES Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER APPLICATIONS • GAIN-BANDWIDTH: 1.6GHz • COMMUNICATIONS • S T A B L E IN GAINS > 2 • MEDICAL IMAGING

KOASS015

Abstract: 6-pin 33M marking 91mk T472 RKC10R
Contextual Info: RESISTOR N E T W O R K SIP T H IC K FILM KOASS015 -|T — No. of Pins . «•max. mm in. :< O 5 6 7 8 9 to 11 12 13 13.2 15.8 18.3 20.9 23.4 25.9 28.5 31.0 33.6 36.1 1.020 1.122 1.220 1.323 1.421 0.520 0.622 0.720 0.823 0.921 i\ SPEER ELECTRONICS, INC. RATING

Contextual Info: 79-1303; Rev 0: 10/97 JV K A X A JV i Low-Cost Downconverter with Lx>w-Noise Am plifier The MAX2406 low-noise amplifier LNA /downconverter mixer is designed for use over a wide range of frequen­ cies and is optimized for communications systems operating at a frequency of 1.9GHz. A pplications

DIODE AA116

Abstract: aa117 diode
Contextual Info: SCRs AA100-AA104 .5A, Planar AA114-AA118 FEATURES • Maximum Gate Trigger Current: 2, 20 or 200pA • Tight Gate Trigger Voltage Range: .44 to ,6V • Voltage R atin g s: to 400V AA107-AA111 DESCRIPTION This date sheet describes Microseml's A A Series 0.5A S C R s designed for low-current

Contextual Info: Wideband, High-Slew Rate, Monolithic Op Amp CLC404 APPLICATIONS: FEATURES typical : • • • • • • • • • • • fast A/D conversion line driving video distribution high-speed communications radar, IF processors 165MHz large signal bandwidth (5VPP)

DIODE AA116

Abstract: AA116 diode diode aa118 AA115 diode AA107-AA111 AA118 AA111 diode diode lt 823 aa118 diode DIODE AA104
Contextual Info: AA100-AA104 AA107-AA111 AA114-AA118 SCRs .5A, Planar FEATURES • Maximum Gate Trigger Current: 2, 20 or 200pA • Tight Gate Trigger Voltage Range: .44 to ,6V • V o lta g e R a tin g s : to 400V DESCRIPTION This date sheet describes Microseml's A A Series 0.5A S C R s designed for low-current

3510S-1-502

Abstract: 3510S-1-501 3510S-1-250 Bourns 3510 3510S-1-103 MIL-R-12934 MIL-E-5272 3510S
Contextual Info: P R E C ISIO N PO TEN TIO M ETER FEATURES • SILVERWELD term ination elim inates vulnerable single w ire term ination. ■ High tem perature perform ance +125°C . ■ O utstanding resistance to hum idity. Exceeds hum idity cyclin g requirem ents of MIL-R-12934.

Contextual Info: BURR - BROW N BUF634 AVAILABLE IN DIE 250mA HSGH-SPEED BUFFER FEATURES APPLICATIONS • HIGH OUTPUT CURRENT: 250mA • SLEW RATE: 2000V/|iS VALVE DRIVER SOLENOID DRIVER • PIN-SELECTED BANDWIDTH: 30MHZ/180MHz OP AMP CURRENT BOOSTER LINE DRIVER HEADPHONE DRIVER

LTV-817C

Abstract: IC 74183 LTV-817D LTV817C LTV817B 74183 liteon 817 Lite-on 817 LTV-817-C
Contextual Info: High Density M ounting Type Photocoupler I.TV817 / I.TV827/ LTV847 : ~ i JLITE-ON INC 31E J> SS3b3b7 • FEATURES 1. Current transfer ratio CTR: MIN. 50% at lF = 5mA, Vce = 5V 2. High input-output isolation voltage VIS0: 5,000 Vrms 3. Compact dual-in-line package

relay 5v 30a

Abstract: F D203 L5A relay ID202 ID300 ID301
Contextual Info: ID200-ID203 ID300-ID301 SCRs 1.6 Amp, Planar FEATURES • Voltage Rating: to 200V • Max. Gate Trigger Current: 200iiA • Hermetically Sealed Metal Can • Planar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs

02JX

Abstract: cy7c291 CY7C291A CY7C292A CY7C293A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode
Contextual Info: Y P R E S S SEMICONDUCTOR 4bE » D S SflU b a 'T^fc-13-Z* CYPRESS SEMICONDUCTOR Features • Windowed for «program m ability • CMOS for optimum speed/power • High speed -¡•20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

TRANSISTOR C 369

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5060 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN T O -3P • High Collector-B ase Voltage (V c b o = 1 5 0 0 V ) • High Sp eed Sw itching (tf. max=0.4^S) ABSOLUTE MAXIMUM RATINGS C h aracteristic

mcr1a

Abstract: MCR-1A
Contextual Info: THICK FILM CHIP SURFACE MOUNT RESISTORS 1/20 WATT 0402 TO 3 WATT (4020) MG SERIES • ■ ■ ■ Widest selection in the industry! Wraparound termination with No Leach nickel barrier Heavy solder plating facilitates the soldering process 1% and 5% chips available from stock (refer to pg. 4)