100A MOSFET IXYS Search Results

IXFZ140N25T

Contextual Info: Advance Technical Information IXFZ140N25T GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 Test Conditions Maximum Ratings

IXTN110N20L2

Abstract: NC182
Contextual Info: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA IXTN110N20L2 VDSS ID25 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN110N20L2 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ140N25T RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 D D D G Symbol Test Conditions

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA100N04T2 IXTP100N04T2 VDSS ID25 = 40V = 100A Ω ≤ 7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

IXTP100N04T2

Abstract: IXTA100N04T2 100N04
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA100N04T2 IXTP100N04T2 VDSS ID25 = 40V = 100A Ω ≤ 7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V

Contextual Info: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFB100N50Q3 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFB100N50

Contextual Info: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

DE275X2-102N06A

Abstract: 102N06 DE275X2 102N06A 400P DE-27
Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in

DE275X2-501N16A

Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in

102N12

Abstract: Directed Energy Directed 400P DE375-102N12A
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

400P

Abstract: DE375-501N21A mosfet SPICE MODEL
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

400P

Abstract: DE475-501N44A Directed Energy
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

400P

Abstract: DE475-102N21A
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

nec 2401

Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
Contextual Info: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

DE275-501N16A

Abstract: 92-0002 DE275-501N16
Contextual Info: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

DE375-102N10A

Contextual Info: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

102N06A

Abstract: 400P DE275-102N06A 10-DOF 102N06
Contextual Info: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Directed Energy

Abstract: DE275-102N06A
Contextual Info: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

DE375-501N16A

Contextual Info: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500

IXAN0021

Abstract: MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications
Contextual Info: IXAN0021 New Trench Power MOSFETs in Isolated Packages Abstract Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180, D { 68619 Lampertheim www.IXYS.net This paper presents a new family of power semiconductor components with low voltage trench MOSFETs in isolated packages: MOSFET and packaging technologies are brie y

nec 2401

Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
Contextual Info: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

nec 2401

Abstract: Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed
Contextual Info: Directed Energy, Inc. An DE150-201N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR

nec 2401

Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice
Contextual Info: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR