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    102N12 Search Results

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    102N12 Price and Stock

    OMRON Industrial Automation

    OMRON Industrial Automation V320F102N12MNNP

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    Master Electronics V320F102N12MNNP
    • 1 $1952.87
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    OMRON Industrial Automation V330F102N12MNNX

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    Master Electronics V330F102N12MNNX
    • 1 $2807.25
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    OMRON Industrial Automation F320F102N12MNNV

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    Master Electronics F320F102N12MNNV
    • 1 $3932.79
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    OMRON Industrial Automation V320F102N12MNNX

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    Master Electronics V320F102N12MNNX
    • 1 $2716.02
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    OMRON Industrial Automation F320F102N12MNNA

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    Master Electronics F320F102N12MNNA
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    102N12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    102N12

    Abstract: Directed Energy Directed 400P DE375-102N12A
    Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    de375-102n12a50mhz102n12directed energy+2directed400p PDF

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


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    56mhzde375-102n12adeic4200-471-03018-x+1013.56mhz 3kw generator3kw generatormosfet 5kw high power rf5kw switching power supply designhigh frequency 5kw power transformercircuit diagram of 13.56mhz rf generatormosfet 3kw3kw and 5kw half-bridge class-d rf generators3kw mosfetequivalent circuit of power transformer 11kv PDF

    DE375-102N12A

    Abstract: 400P
    Contextual Info: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    de375-102n12a50mhz400p PDF

    DE375-102N12A

    Abstract: PIN diode SPICE model 400P 102N12A
    Contextual Info: DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original
    de375-102n12a50mhz2n12apin diode spice model+2400p102n12a PDF

    IXZ4DF12N100

    Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
    Contextual Info: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original
    ixz4df12n100deic-515de375-102n12a1000lvin+8deic515500w mosfet power amplifier circuit diagrampower mosfet rise time 1 nscircuit diagram of smps 500wrf power mosfetdeic 515rf mosfet power amplifierrf amplifier 500w 175 mhz PDF