100422 Search Results

Contextual Info: FUJITSU M I C R O E L EC TR ON IC S 23E D • 374T7b2 ODOflltl 3 ■ E C ^ 1 0 2 4 IB IT » FUJITSU BIPOEEAR RANDÖI ACCESS MEMOR MBM 100422A-5 MBM 100422A-7 T-<4t>-ZVOg April 1987 Edition 3.Ô 1024-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100422A Is fully decoded 1024-bit EC L read/write random

74801

Abstract: C901
Contextual Info: MOTOROLA SC -[M E M O R Y /A S IC ï 7 1 D Ë J k,3fc.72S l O O b ^ B fi ] 5 T -4 6 -2 3 -0 8 Order this data sheet by M C M 100422-10/D MOTOROLA S E M IC O N D U C T O R • h h h h h TECHNICAL DATA M C M 1 0 0 4 22 -10 M C M 1 004 2 2-1 5 Advance Inform ation

Contextual Info: * 100422-3 «5Y101422-T SYNERG Y 256 X 4 ECL RAM SY 100422-4 SY 101422-4 SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, u a : 3/4ns max. Block select access time, tA B : 2ns max. Write pulse width, tww: 3ns min.

Contextual Info: Extract from the online catalog WS 4-10 Order No.: 1004225 The illustration shows version WS 4- 8 Warning plate, with 2 plastic screws, across 4 terminal blocks, pitch 10 mm Product notes

00422

Abstract: hitachi ha-1
Contextual Info: 100422,HM 100422 F HM 100422CG 2 5 6 - w o r d x 4 - b i t Fully D e coded Random Access M e m o r y The 100422 is ECL 100K compatible, 256-word x 4-bit, read write, random access memory developed for high speed system such as scratch pads and control/buffer storages.

Contextual Info: 100422.100422F HM 100422CG 2 5 6 - w o rd x 4 -b it Fully Decoded Random A c c e ss Memory 100422 The 100422 is ECU 100K compatible, 256-word x 4-bit, read write, random access memory developed for high speed system such as scratch pads and control/buffer storages.

100422a-5

Contextual Info: FU JITSU ECL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY MBM 100422A-5 MBM 100422A-7 April 1987 Edition 3.0 1024-BIT B IP O L A R E C L RANDOM A C C ESS M EM ORY The Fu jitsu MBM 100422A is fu lly decoded 1024-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage

100422

Abstract: VAHC
Contextual Info: H M 10 0 4 2 2 . H M 1 0 0 4 2 2 F H M 10 0 4 2 2 C G 2 5 6 - w o r d x 4 - b it F u lly D e c o d e d R a n d o m A c c e s s M e m o r y HM 100422 The 100422 is E C L 100K compatible, 256-word x 4-bit, read w rite, random access memory developed for high speed system such

d2316

Abstract: Random Access Memory RAM 100422DC10 100422DC5 100422DC7 100422FC10 100422FC5 100422FC7 J24E W24B
Contextual Info: 100422 National JSmSemiconductor 100422 256 x 4-Bit Static RAM 10 ns, 7 ns, 5 ns General Description Features The 100422 is a 1024-bit read/write Random Access Mem­ ory RAM , organized 256 words by four bits per word. It is designed for high-speed scratchpad, control and buffer stor­

3ha5

Abstract: ram 256x4 100422A 100422AF 100422B 100422BF 100422F
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 1024-BIT ECL RAM 256 X 4 100422/100422A/100422B DESCRIPTION FEATURES The 100422 device is a 256-w ord by 4-bit, fu lly e ncoded ECL R ea d /W rite Random A cce ss M em ory d e sig n e d fo r h ig h speed scra tch pad, co n tro l, and b u ffe r sto ra g e

100422B

Contextual Info: 1 0 0 4 2 2 B S ig n e tic s IK-Bit ECL Bipolar RAM Preliminary Specification Bipolar M em ory Products DESCRIPTION The 100422B device is a 256-word by 4bit, fully encoded ECL Read/W rite Ran­ dom Access Memory designed for high­ speed scratchpad, control, and buffer

Contextual Info: Warning label - WS 4-10 - 1004225 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

fbii

Abstract: APB100422 D-10 IUPB100422D-7 CERAMIC FLATPACK CERAMIC FLATPACK socket
Contextual Info: N E C H ELECTRONICS INC blE D • mS7S2S 00353S5 f  à 'r * 34=5 « N E C E J*PB10 0 4 2 2 2 5 6 X 4 -B it NEC Electronics Inc. 100K ECL RAM T -V b '-Q j^ Description Pin Configurations The jaPB 100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with

Contextual Info: 100422.100422F HM 100422CG 2 5 6 - w o r d x 4 - b i t F u lly D e co d e d R and o m A ccess M e m o ry The 100422 is ECL 100K compatible, 256-word x 4-bit, read write, random access memory developed fo r high speed system such as scratch pads and control/buffer storages.

tws bs3 433

Abstract: MBM100422 hm100422 TWS 434 dm10422 DM100422 DM100422A
Contextual Info: DM 100422/DM 100422A National Semiconductor Corporation March 1987 DM 100422/DM 100422A 1024-Bit 256 x 4 ECL RAM General Description Features The 100422/100422A is a 1024-bit ECL random ac­ cess memory organized as 4 blocks of 256 bits. Since each block has its own Select input, the memory can be config­

100422B

Abstract: 100422C BD01
Contextual Info: 100422B Signetics 1K-Bit ECL Bipolar RAM Preliminary Specification B ip o la r M e m o ry P r o d u c ts D E S C R IP T IO N T he 100422B d evice is a 256-word by 4bit, fully en cod e d E C L R ead /W rite R a n ­ dom A c c e s s M em ory designed for high­

100422C

Abstract: 100K series ECL
Contextual Info: 100422C Signetics IK-Bit ECL Bipolar RAM Prelim inary Specification Bipolar M em ory Products DESCRIPTION The 100422C device is a 256-w ord by 4bit, fully e ncoded EC L R e a d /W rite R an­ dom A cce ss M em ory designed fo r high­ speed scra tch pad, control, and buffer

ws 410

Contextual Info: Extract from the online catalog WS 4-10 Order No.: 1004225 The illustration shows version WS 4- 8 Warning plate, with 2 plastic screws, across 4 terminal blocks, pitch 10 mm Product notes

A210

Abstract: SBS10 ZB10
Contextual Info: Extract from the online catalog UKKB 10 Order No.: 2772077 Feed-through modular terminal block, Cross section: 0.5 mm² - 16 mm², AWG: 20 - 6, Connection type: Screw connection, Width: 10.2

Contextual Info: DIP Type SBC Coils [RoHS [RoHS Compliant] Compliant] ●SBC1Series（SBC1-□□□-○○○） Model 1R0-312 1R5-292 2R2-272 3R3-232 4R7-202 6R8-182 100-172 150-162 220-132 330-102 470-711 680-651 101-571 151-431 221-391 331-341 471-301 681-251 102-211 152-181

Contextual Info: A dvanced P h o to ; c. GENERAL PURPOSE SILICON DETECTOR/PREAMPLIFIER These detector/pre-amp hybrids combine planar diffused photodiode chips with monolithic op-amps in the transimpedance amplifier configuration. The feedback capacitor and resistor are connected externally by the user, allowing

SBS10

Abstract: ZB10 UK10N
Contextual Info: Extract from the online catalog UK 10 N Order No.: 3005073 Feed-through modular terminal block, Connection method: Screw connection, Cross section: 0.5 mm² - 16 mm², AWG 20 - 6, Width: 10.2

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Change to the supply current test, ICC, in table I. Update boilerplate. - rrp 99-11-16 R. MONNIN B Add radiation hardness requirements. Add case outline D. Add table IIB. - rrp 00-05-05 R. MONNIN C Add footnote to the supply voltage test in section 1.3. Add footnote to the

Contextual Info: Extract from the online catalog UK 10-TWIN BU Order No.: 3005235 1-level terminal block with double connection on one side, cross section: 0.5 - 10 mm², AWG: 24 - 6, width: 10.2 mm, color: blue