tws bs3 433
Abstract: MBM100422 hm100422 TWS 434 dm10422 DM100422 DM100422A
Contextual Info: DM 100422/DM 100422A National Semiconductor Corporation March 1987 DM 100422/DM 100422A 1024-Bit 256 x 4 ECL RAM General Description Features The DM100422/DM100422A is a 1024-bit ECL random ac cess memory organized as 4 blocks of 256 bits. Since each block has its own Select input, the memory can be config
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100422/dm100422a1024-bitdm100422/dm100422atl/l/6749-7+12dm100422jdm100422ajtl/l/6749-8dm10422w10422awtws bs3 433mbm100422hm100422tws 434dm10422dm100422dm100422a
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6301-1 prom
Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im m e d ia te ly a va ila b le by fo llo w in g th e fu s in g
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8192-bit1024x882hs181/82hs181a82hs181+14n82hs185n82s25n82s16tbp18sa030j6301-1 prom3622 prommmi 3601prom 3601intel 3601 promprom intel 36019344cn82s14174s189n82s137
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N82S191
Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate ly available by following the fusing proce dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.
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384-bit2048x882s191n82s191+11n82hs185n82s25n82s166301-1 promsignetics prom6331-1prom intel 3601signetics prom n82s14174s200hm76161-593427c
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N82S141
Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ly available by fo llo w in g th e fu sin g p roce
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8192-bit2048x482hs185/82hs185a82hs185+14n82hs185n82s25n82s16tbp18sa030jn82s14193427c6331-1n82s137mmi 6301-174s200n82s12974s206mmi 6341-1am27s29c
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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dg211dg300dg308tca965 equivalent+9uln2283capacitor 473j 100nuaf771transistor gdv 65apbd352303cm2716taa2761taa4761uln2401
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N82S181
Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.
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8192-bit1024x882s180/82s181+1082s181n82s181n82s14174s200mmi 36016331-1 promtbp24sa1093427cn82s147mmi 6330
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