1.57 GHZ TRANSISTOR Search Results

HPAC-70GT

Abstract: TRANSISTOR 117a HXTR-6106 S21E
Contextual Info: COMPONENTS Features ' HXTR-6106 1.98 0 . 078 1.57 (0 . 0 62 ) GUARANTEED LOW NOISE FIGURE 2.7 dB at 2 GHz Max., 2.5 dB Typical 3.8 dB at 4 GHz Typical HIGH ASSOCIATED GAIN 11.5 dB Typical at 2 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction

CGH40035FE

Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT
Contextual Info: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and

smd transistor 581

Abstract: 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 16 2002 Mar 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • Designed for broadband operation HF to 2.2 GHz

4H74

Abstract: NE68337 S21E
Contextual Info: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS

Contextual Info: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

smd transistor 581

Abstract: 2222-581 BLF1822-10 TEKELEC 302
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V

371 ph

Abstract: motorola 2198 MRF949 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N
Contextual Info: MOTOROLA Order this document by MRF949T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low

Philips Capacitor

Abstract: smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V

Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

microlab fc 730

Abstract: ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949 MRF949T1
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well

transistor motorola 351

Abstract: MRF949T1 MRF949 sc 2878
Contextual Info: Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

MRF949

Abstract: MRF949T1
Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

2222-581

Abstract: transistor BR 471 A 821 ceramic capacitor smd capacitor philips 0805 smd capacitor philips 2222 capacitor philips EL series SMD transistor philips capacitor capacitor ceramic variable RF iec C19
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Preliminary specification 2001 Aug 16 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • High power gain PIN

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola's M R F 9 4 9 is a high perform ance N P N transistor designed for use in high gain, low noise sm all-signal amplifiers. T h e M R F 9 4 9 is well suited for low

GHZ micro-X Package

Abstract: micro-x transistor BRF60202 BRF60202J BRF60214 BRF60235 BRF60284 BRF60285 BRF60286 BRF60292
Contextual Info: BIPOLARICS, INC. Part Number BRF602 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C =2mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' BRF602 is a high performance silicon bipolar

17dBtyp

Abstract: GHZ micro-X Package BRF63002 BRF63002J BRF63004 BRF63014 BRF63035 BRF63086 macro-X ceramic BRF63092
Contextual Info: BIPOLARICS, INC. Part Number BRF630 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 30mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz

macro-X ceramic

Abstract: BRF604 BRF60402 BRF60402J BRF60404 BRF60414 BRF60435 BRF60485 BRF60486 BRF60487
Contextual Info: BIPOLARICS, INC. Part Number BRF604 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 4mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz

GHZ micro-X Package

Abstract: MICROWAVE TRANSISTOR Micro-X ceramic npn micro-x transistor MICRO-X Silicon Bipolar Transistor 35 MICRO-X BRF610 BRF61002 PACKAGE STYLE 51 BRF61004
Contextual Info: BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar

NE41607

Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

Silicon Bipolar Transistor 35 MICRO-X

Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X
Contextual Info: BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 27.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar

Contextual Info: PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

40w electronic ballast

Abstract: Electronic ballast 40W PH1214-40M
Contextual Info: PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

2SC1593

Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is