0G017 Search Results

L72A

Abstract: CCLHM080 CCLHM100 CCLHM120 CCLHM150
Contextual Info: Central" CCLHM080 THRU CCLHM150 Semiconductor Corp. FEATURES HIGH CURRENT CURRENT LIMITING DIODE • LOW COST • SUPERIOR LOT TO LOT CONSISTENCY •H IG H RELIABILITY • LEADED DEVICES AVAILABLE • SPECIAL SELECTIONS AVAILABLE DESCRIPTION , ^ NwRh L SEM IC0^ ? U C T 0 r CCLHM080 series types are high current silicon field effect current

QS3J245

Contextual Info: QS3J245 ADVANCE INFORMATION QuickScan 8-Bit Universal JTAG Access Port with Output Enable QS3J245 FEATURES/BENEFITS • • • • • • IEEE 1149.1 - 1993 compliant Direct bus connection when switches on Superset pinout of a '245 Undershoot clamp diodes on all inputs

Contextual Info: TT M/HITE M IC R O ELEC T R O N IC S 4Mx4 CMOS FPM Dynamic RAM WPD4M4-70TSX PRELIM IN A RY* PLASTIC PLUS FEATURES • Fast Access Time tRAc : 70ns (Max) PIN CONFIGURATION ■ Power Supply: 5V ±0.5V 300 M IL T S O P II ■ Packaging < o o □_ TOP VIEW

Contextual Info: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

Contextual Info: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)

OMA541SDB

Abstract: op 07 c #0809 OMA541SKB OMA541 OMA541SDZB OMA541SKCB 5962-8870101XX 5962-8870101 017t
Contextual Info: OMA541SKB OMA541SKCB OMA541SDB OMA541SDZB POWER OPERATIONAL AMPLIFIER IN METAL DUAL IN-LINE PACKAGE APPROVED TO DESC DRAWING 5962-88701 8-Pin, TO-3 And Isolated DIP, 10 Amp Power Operational Amplifier, DESC Drawing 5962-88701 FEATURES • • • • • •

yamaha VDP

Abstract: YGV607 "FRC"
Contextual Info: Y A M A H A * L S I YGVB07 PVDCD Pattern mode Video Display Controller Digital out • OUTLINE PVDCD is an ideal VDP for controlling the screen of liquid crystal television sets and liquid crystal panels. Its extensive functions include a pattern graphic plane, sprite plane. ROM data transfer function, and external

LJ016

Contextual Info: 4 Megabit CMOS SRAM DPS128X32XP/XHP ADVANCED INFORMATION DESCRIPTION: The DPS128X32XP/XHP is a 68-p'rn surface mount module consisting of four 128K x 8 SRAM devices in plastic TSO P packages surface mounted on a FR-4 substrate. The module is available with either “J"-Leads or

dcr1007

Abstract: Marconi high power button capsule DCR1007SN2323 G001744 DCR1007SN2020 DCR1006SN2020 064c DCR1007SN DCR1006SN2424 DCR1006SN2626
Contextual Info: MARCONI CKT TECHNOLOGY MEDL 3QE D • 57Ö34MS High Power Button Capsule Thyristor GOQ174M D DCR1006 DCR1007 IT AV = VRRM = Series Series 1200A 2900V T - 2 5 'J l Non-Repetitrve Repetitive Peak Voltages Peak Voltages V osm V rsw V dbm V rum Type Number DCR1006SN3030

Contextual Info: DENSE PAC 2 Megabit CM O S SRAM MICROSYSTEMS DPS256S8P/DPS256S8PL/DPS256S8PLL D ESCRIPTIO N : The DPS256S8P/PL/PLL is a 256K x 8 high-density, low-power static RAM module comprised of two 12 8 K x 8 mono Iith ic SRAM 's, an advanced h ¡gh-speed C M O S decoder and decoupling capacitors surface

A1774

Abstract: lt626 IM340 LM340 TO92 a1774 8 sop 7905 regulator MJ2955 300 watts amplifier circuit diagram TRANSISTOR 2SC 458 1117 TO92 lm340 so8
Contextual Info: IM E MOTOROLA SC {TELECOM} D I b 3t.72 S 3 0 D ä l7 b S "T-Sfc-U-Vi M L M 1 4 0 yA S e r í e s M O TO R O LA L M 3 4 0 ,A S e r íe s Specifications and Applications Information THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS SILICON M ONOLITHIC IN TEG RA TED CIRCU IT

hard disk head preamp

Abstract: IMP49P504 MAX2292
Contextual Info: SIGNAL PROCESSING COMPONENTS IMP49P504 4+4 MR PREAMP and TF WRITE DRIVER Description Feature Summary The IMP49P504 is a combination four-input magneto-resistive pre-amplifier and four-output thin film write driver. It is ideally suited for mass storage applications utilizing advanced MR head technology,

uPD75X

Abstract: upd75xx
Contextual Info: S-24H30R/I 8-wordX 8-bit Serial NON-VOLATILE RAM T h e S -2 4 H 3 0 R /I is a non-volatile C M O S R A M , com po sed of a C M O S static R A M and a non-volatile electrically erasab le p ro gram m able m em ory E 2P R O M to backup the S R A M . T h e organization is 8-word x 8bit (total 6 4 bits) and data can be transferred serially by

Contextual Info: Central" CMPD4150 Sem iconductor Corp. HIGH CURRENT HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

Contextual Info: >”• >1 -w « i f g ® i ” - ui wpupi . ä 'V yi '"1 ? f T j n I ^ »mSsPT-%* ? i / » » *r -1? p “ •*■’ ■ ■ ’ ■ DB2803S • DB2805S • DB2812S • DB2815S APEX MICRQTECHNOLOGY CORPORATION » APPLICATIONS HOTLINE 8QO 546-A P E X 8 0 0 -5 4 -6 -2 7 3 9

LM140T

Abstract: LM340AK-15 10W 6.8 ohm k ceramic resistor 68ro
Contextual Info: MOTOROLA SC IME D I b3t.72S3 0Däl7bS fi | {TELECOM } "T-Sfc-U-Vi M L M 1 4 0 yA S e r í e s M O TO R O LA L M 3 4 0 ,A Specifications and Applications Information S e r íe s THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS SILICON MONOLITHIC INTEGRATED CIRCUIT

Contextual Info: T R I Q U I N T T O S E M I C O N D U C T O R , I N C G A 9 1 0 1 / G A 9 1 0 2 Fibre Channel & ESCOtT Transmitter and Receiver The Fiber Channel Specification is intended as a standard I/O channel interface fo r either serial interconnection of peripherals to com puters or for

UG-0177

Contextual Info: S-24H30R/I 8-word X 8-bit Serial NON-VOLATILE RAM Th e S -2 4 H 3 0 R /I is a non-volatile C M O S RAM , com posed of a C M O S static RAM and a non-volatile electrically erasable program m able m em ory E 2PR O M to backup the SR A M . T h e organization is 8-word x 8bit (total 64 bits) and data can be transferred serially by

DPS256S8PLL

Contextual Info: DENSE PAC 2 Megabit CM O S SRAM MICROSYSTEMS DPS256S8P/DPS256S8PL/DPS256S8PLL D E S C R IP T IO N : The DPS256S8P/PL/PLL is a 256K x 8 high-density, low-power static RAM module comprised of two 12 8 K x 8 mono Iith ic SRAM 's, an advanced h ¡gh-speed C M O S decoder and decoupling capacitors surface

hall current sensor 3A

Abstract: PBL3770A PBL3770AN LM motor driver circuit diagram of stepper LM 35 temp sensor microstepping 3717 t5225 DDQ17S
Contextual Info: ERICSSON COMPONENTS INC IbE D ERICSSON $ • 3373böQ GDD1724 4 ■ September 1989 _T - S 2 - I 3 - 2 S PBL 3770A High Performance Stepper Motor Drive Circuit Description Key Features PBL 3770A is a bipolar monolithic circuit Intended to control and drive the current in

Contextual Info: PMC-Steira, Inc. errata I • V I V — _ P M 5 3 4 7 S / U N I - P L U S ISSUE2 SAUFNLGBIbEÎWORKINIERFKE-PlJUB PM5347 SATURN USER NETWORK INTERFACE PLUS ERRATA Issue 2: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)

LTV-817C

Abstract: IC 74183 LTV-817D LTV817C LTV817B 74183 liteon 817 Lite-on 817 LTV-817-C
Contextual Info: High Density M ounting Type Photocoupler I.TV817 / I.TV827/ LTV847 : ~ i JLITE-ON INC 31E J> SS3b3b7 • FEATURES 1. Current transfer ratio CTR: MIN. 50% at lF = 5mA, Vce = 5V 2. High input-output isolation voltage VIS0: 5,000 Vrms 3. Compact dual-in-line package