0D27 Search Results

T147

Abstract: 3307r schlumberger 2N4896 2N5220 2N4400 2N4401 2N4402 2N4403 FTS04400
Contextual Info: FAIRCHILD SEMICON DUC TO R fi4 DEj34t.Tt.74 0D27Sfll 1 3469674 FAIRCHILD SEMICONDUCTOR „ IDCHILD i, A Schlumberger Company • • • • • 84D 27581 D mmm 2N4400/FTS04400 ' ' - t r - i i 2N4401/FTS04401 Small Signal General Purpose Amplifiers & Switches

Contextual Info: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope

Contextual Info: N AMER PHILIPS/DISCRETE b*lE B b b S S 'm y 0D27blJ5 2ST BU87fc> APX BC878 BC880 v SMALL-SIGNAL DARLINGTON TRANSISTORS PNP epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.

photodiode linear array

Abstract: Siemens photodiode linear array photodiode element 9 ELEMENT photoDIODE ARRAY
Contextual Info: SIEMENS AKTIENGESELLSCHAF 4?E S fl£3SbOS 0D2744'Ì fi « S I E G SIEMENS KOM 0622045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT [ - 4 l - .5 5 Outline Drawing Dimensions mm PC board Strip Chip Seal 1 1$2V 13.7 13.1 —I— t 4J- i The p a c k a g e consists of a PC board with

BT169

Abstract: BT 169 D bt 169
Contextual Info: N AMER PHILIPS/DISCRETE t>1E D • ^53*131 0D2732Ô 0Û4 H A P X BT169 SERIES THYRISTORS F u lly -d iffu s e d th y ris to rs in T O — 92 package, w ith lo w gate cu rre n t requirem ent suitable fo r driving fro m IC o u tp u ts. A p p lic a tio n s include relay and co il pulsing, c o n tro l o f small DC m otors, small lamps,

BL P9n

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbSBTBl 0D27Dfl3 254 « A P X Philips Semiconductors Product specification Double low-voltage avalanche regulator diodes PLVA2600A series QUICK REFERENCE DATA FEATURES • Very low dynamic impedance at low current • Hard breakdown knee

Contextual Info: 7 ^ 5 3 7 0D277Ô3 •% 'Z -V lO E MK44S80 N,X -15/17/20 SGS-THOMSON Ki]D i lllL[lCTlH]®lD©S 65,536-BIT FAST CMOS 16 K X 4 CACHE TAGRAM S G S-THOMSON 3ÜE PIN CONNECTION FEATURES • ■ ■ ■ ■ ■ ADVANCE DATA » 16Kx 4 FAST CMOS CACHE TAGRAM

BC548B PHILIPS

Abstract: BC546 philips BC548c PHILIPS BC548A BC547 driver audio bc547 bc54b BC546 BC547B BC546A
Contextual Info: I I N AMER PHILIPS/DISCRETE bTE D • bbSBTBl 0D2755Ö bfl3 H A P X BC546 to 548 I SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO-92 envelope, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

triac bt139

Abstract: 800H BT139 T0220AB RJ28
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSSTSl 0D272fc>5 070 ■ APX Preliminaryspec Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications

B1151

Abstract: BT151F BT151F-500 M2288
Contextual Info: N AMER PHILIPS/DISCRETE b'îE D • bbSB'ìBl 0D27310 Il 4 «APX BT151F SERIES FULL-PACK THYRISTORS Glass-passivated thyristors in SOT-186 envelopes, incorporating electrical isolation between the mounting base and all three terminals. Applications include temperature control, motor control,

Contextual Info: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor

Contextual Info: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

Contextual Info: N AUER PHILIPS/DISCRETE b5E D bb53531 0D27575 7bE • APX BC556 to 558 yv. SILICON PLANAR EPITAXIAL TRANSISTORS I General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

Contextual Info: N AUER PHILIPS/DISCRETE bTE » bbS3^31 0D276S3 fl44 BSS38 APX SILICO N PLANAR EPITAXIAL T RA N SIST O R N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes. Q U IC K R E F E R E N C E D A T A

BCY10

Abstract: BCY12 BCY70-BCY71-BCY72 BCY71 BCY70 BCY72 silicon planar epitaxial transistors
Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 b'IE » 0D27bBb TT3 H A P X BCY70 to 72 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A T A

TC528257

Abstract: n724
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The

8L14

Abstract: pal6l16acns PAL6L16A
Contextual Info: ADV M I C R O P L A / P L E / A R R A Y S 1t / Ï Ë J Q2S7Sat OüäVl'H 8 T-46-13-47' Decoder Series 6L16A 8L14A Ordering Inform ation Features/B enefits • 14 to 16 output* PAL6L16A C NS STD • Efficient Implementation of decoder« PROGRAMMABLE ARRAY LOGIC

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

Contextual Info: CMOS Clocked FIFO With Bus Matching and Byte Swapping IDT723613 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity FIFO buffering data from Port A

Contextual Info: Integrated Device Technology, Inc. CMOS Sync BiFlFO With Bus-Matching 256x36x2, 512x36x2, 1,024x36x2 PRELIMINARY IDT723624 IDT723634 IDT723644 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS M 37710M 8LX X X H P par?ro*u' \ìrnst“’à S IN G LE -C H IP 1 6-B IT CM O S M IC R O C O M P U T E R DESCRIPTION • W ide operating temperature range 16-bit micro­ • Interrupts. 19 types 7 levels

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

transistor BC137

Abstract: BC137 RE5RE50 24516 bc107 connections bc136 VP1127 transistor bc102 vp251 M37274EFSP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog