09DEC13 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C 2 3 RELEASED FOR PUBLICATION LOC DY ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 1 REVISIONS DIST - P DESCRIPTION LTR F2 1.5 REF DATE REVISED PER ECR-13-019056 DWN W.K. S.C. 09DEC13 APVD D D DETAIL M 0.70

Contextual Info: V10D100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

Contextual Info: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection

Contextual Info: V10D120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: VSSA210-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: V10D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES ® TMBS eSMP Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V30D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: DG406, DG407 www.vishay.com Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406 is a 16 channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407

Contextual Info: B120-M3, B130-M3, B140-M3, B150-M3, B160-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

V10L45

Contextual Info: V10PL45-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement

Contextual Info: V30D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: BYS11-90-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses

Contextual Info: B350A-M3, B360A-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

Contextual Info: VSSAF3L45-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm TMBS SlimSMATM • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency

Contextual Info: V10PM12-M3, V10PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: SS22S-M3, SS23S-M3, SS24S-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability

Contextual Info: VSSA310S-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency

Contextual Info: V30DM120C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: SL12-M3, SL13-M3 www.vishay.com Vishay General Semiconductor Low VF Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop

Contextual Info: V10D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V30D60CL www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: DG406B, DG407B www.vishay.com Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406B is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address.