|
B160-M3/5AT
|
|
Vishay General Semiconductor
|
Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1A 60V SMA |
Original |
PDF
|
|
5 |
|
B160-M3/61T
|
|
Vishay General Semiconductor
|
Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1A 60V SMA |
Original |
PDF
|
|
5 |
RB160M-30
|
|
Shikues Semiconductor
|
Metal silicon junction, majority carrier conduction, low power loss, high efficiency, high forward surge current capability, SOD-123FL case. |
Original |
PDF
|
|
|
|
RB160M-30 环保
|
|
JCET Group
|
RB160M-30 Schottky barrier diode in SOD-123 package for small current rectification, with 30 V DC blocking voltage, 1 A forward current, low forward voltage of 0.48 V at 1000 mA, and 450 mW power dissipation. |
Original |
PDF
|
|
|
|
RB160M-30
|
|
JCET Group
|
Schottky barrier diode in SOD-123 package for small current rectification, with 30 V DC blocking voltage, 1 A forward current, 450 mW power dissipation, and low forward voltage of 0.48 V at 1 A. |
Original |
PDF
|
|
|
|
AD-RB160M-30
|
|
JCET Group
|
AD-RB160M-30 is a plastic-encapsulated Schottky barrier diode designed for small current rectification and low voltage applications, with a 30V DC blocking voltage, 1A forward current, and qualified to AEC-Q101 standards. |
Original |
PDF
|
|
|
|
RB160M-30
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode RB160M-30 with 30V peak repetitive reverse voltage, 1.0A forward current, 450mW power dissipation, and operating temperature from -65 to +125°C. |
Original |
PDF
|
|
|
RB160M-30
