07SEP2 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. . COPYRIGHT R E l& S B BY TYCO ELECTRONICS CORPORATION. - F6 R P u S liìa U ò n LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S J LTR DESCRIPTION DATE RELEASED 07SEP2007 D DWN APVD S.I LH D • 1: ■1 : AS SHDVN <i>Z REF 5 .6 8 REF

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR DESCRIPTION DATE EC 0G3C 0323 04 ,007±.0004[0.17±0.01 ] APVD RB KW 07SEP2004 NOTE:- D 697 [17.70] DWN

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONIC5 CORPORATION. AD REVISIONS DIST 00 LTR H B DESCRIPTION DATE EC 0G3C 0323 04 07SEP2004 DWN APVD BSV KW NOTE:- C i— 0.17 + 0.01 [.007+.0004] D

Contextual Info: THIS DRAWING IS UNPUBLISHED. REl E a S H TÔR P u B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS RESERVED- DESCRIPTION LTR RELEASED DATE DWN APVD 07SEP2007 S.l LH NDTE D DATUM AND BASIC DIMENSION ESTABLISHED BY CUSTOMER,

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC D I ST FT RESERVED. R E V LTR I S I O N S DESCRIPTION R E L E A S E D EC 0 G 3 B - 0 2 3 2 - 02 47 05 2 2 DWN DATE 280CT2ÛÛ2

Part Marking STMicroelectronics TSSOP8

Abstract: M95256
Contextual Info: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

STTH30

Contextual Info: STTH30L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ K A Reduces switching and conduction losses D2PAK STTH30L06G Description The STTH30L06, which is using ST Turbo 2 600 V

PR3002 diode

Abstract: PR3002 PR3004 PR3007 PR3001 PR3003 PR3005 PR3006
Contextual Info: LITE-ON SEMICONDUCTOR PR3001 thru PR3007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

K9F1208U0C-PCB

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SAMSUNG NAND Flash Qualification Report

Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

C2183

Abstract: PWM controller sot23-6 smps transformer design EFD15 TRANSFORMER SMPS SOT23-6 testing smps circuit Primary Sensing SMPS Controller C2-183 C2183PX2 smps controller sot23-6
Contextual Info: C2183 Datasheet Primary Sensing SMPS Controller for Offline Applications KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation without an opto-coupler • Optimised PWM/PFM with quasi resonant switching enables efficiency

STM8L101F2U6

Abstract: WFQFPN RM0013 ice 8040 STM8L STM8L101 PWM example sTM8l STM8 CPU programming manual stm8l flash 64 Kbytes stm8l101f3
Contextual Info: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Preliminary data Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA,

STM8L101x3

Abstract: STM8L151G C 5198 ST7WIND11 ST7WIND21 STM8S105K6 RLINK st7 stm8 stm8s105 MODULE ST72F63 STM8L cpu programming manual
Contextual Info: RN0013 Release notes ST Visual Develop STVD release 4.1.3 Introduction These are the release notes for Release 4.1.3 of the ST integrated development environment, which is now called ST Visual Develop and abbreviated to STVD. The name change from STVD7 to STVD reflects the extension of the development environment to

Contextual Info: FSP-21A-22 Product Details - TE 1 of 1 TE Connectivity My Cart | Have a Question? Japan Update Chat with a Product Information Specialist Products Industries Resources About TE My Part Lists | Sign In/Register

DTS-411

Abstract: DTS411 PNP Transistors
Contextual Info: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300

40348

Contextual Info: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation

PNP Transistors

Abstract: "PNP Transistors"
Contextual Info: 2N5320 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N5320 VCBO 100 hFE 30 IC 500 Industry Type 2N5320 Visa & Mastercard Accepted! Notes

PNP Transistors

Abstract: MJE1320
Contextual Info: MJE1320 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type MJE1320 VCEV 1800 hFE 2.5 IC 2 Notes VCEO 900 hFE A 2.0 COB 80 Industry Type

TO206AA

Abstract: hFE-100 2N3700
Contextual Info: 2N3700 Silicon Transistors - NPN/PNP Medium Power General Purpose Page 1 of 1 Silicon Transistors - NPN/PNP Medium Power General Purpose Contact Factory for complete specification. STI Type 2N3700 VCBO 140 hFE 100 IC A 150m Industry Type 2N3700 Notes *BVCEO

Contextual Info: STP21NM60N-STF21NM60N-STW21NM60N STB21NM60N - STB21NM60N-1 N-CHANNEL 600V - 0.18 Ω - 16 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N

Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■

STTH3L06U

Abstract: S06 rectifier STTH3L06B smb marking stmicroelectronics JESD97 STTH3L06 STTH3L06B-TR STTH3L06RL STTH3L06-RL STTH3L06S
Contextual Info: STTH3L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 0.85 V trr (typ) 60 ns A K K A NC FEATURES AND BENEFITS • ■ ■ ■ DO-201AD STTH3L06 Ultrafast switching

DIMENSIONS soic 28

Abstract: 40 PIN CERDIP ADM231
Contextual Info: 5 V-Powered CMOS RS-232 Drivers/Receivers ADM231L–ADM234L/ADM236L–ADM241L FEATURES ADM236L TYPICAL OPERATING CIRCUIT Single 5 V power supply Meets all EIA-232-E and V.28 specifications 120 kbps data rate On-board dc-to-dc converters ±9 V output swing with 5 V supply