07SEP2007 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. . COPYRIGHT R E l& S B BY TYCO ELECTRONICS CORPORATION. - F6 R P u S liìa U ò n LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S J LTR DESCRIPTION DATE RELEASED 07SEP2007 D DWN APVD S.I LH D • 1: ■1 : AS SHDVN <i>Z REF 5 .6 8 REF

Contextual Info: THIS DRAWING IS UNPUBLISHED. REl E a S H TÔR P u B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS RESERVED- DESCRIPTION LTR RELEASED DATE DWN APVD 07SEP2007 S.l LH NDTE D DATUM AND BASIC DIMENSION ESTABLISHED BY CUSTOMER,

K9F1208U0C-PCB

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SAMSUNG NAND Flash Qualification Report

Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■

K9F1208U0C-PCB0

Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

DRAM material declaration

Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004

NAND02GW3B2D

Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface

Contextual Info: LRI2K 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC GP RESERVED. DIST R E V I S I O N S 00 LTR DESCRIPTION DATE PROPOSED DWN APVD 23FEB2006 RT GG REV PER E C O - 0 7 - 02 I 05 3

3491H

Contextual Info: LRI2K 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION 6 5 4 3 2 2007 LOC AD ALL RIGHTS RESERVED. Tyco Electronics AMP GmbH 1 REVISIONS DIST 00 P LTR C 7 X Y FINISHED HOLE SIZE AND PLATED THRU HOLES 5 DATE REVISED PER ECO-13-002771 DWN

tab 170325

Contextual Info: THIS DRAWING IS U N PU BLISH ED . . COPYRIGHT R E l& S B BY TYCO ELECTRONICS CORPORATION. - F6 R P u S l i ìa U ò n DIST LOC ALL RIGHTS R ESERV ED . J R E V IS IO N S LTR DESCRIPTION DATE 0 7 S E P ’07 REVISED DWN APVD J.S S .M TRADE MARK ä iB : 1.

SAMSUNG NAND Flash Qualification Report

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

K7Q161862B-EC16

Abstract: ntram
Contextual Info: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

Contextual Info: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC 68FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

"MATERIAL DECLARATION SHEET"

Abstract: M470T5663CZ3
Contextual Info: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb C-die 64-bit Non-ECC 60FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: LRIS2K 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■ To tag: 10% or 100% ASK modulation using

NAND02GR3B2D

Contextual Info: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C D 1 20 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - 20 COPYRIGHT 2 3 P 1 DATUM AND BASIC DIMENSION ESTABLISHED BY CUSTOMER. 2 MATERIAL HOUSING:POLYESTER OF GLASS FILLED THERMO PLASTIC UL94V-0 , CARRIER AREA

a1s marking

Abstract: block diagram of VCD block diagram of VCD and its functions marking AFI sof marking 3491H
Contextual Info: LRI2K 13.56 MHz, 2048-bit EEPROM tag IC with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency ■ To tag: 10% or 100% ASK modulation using

i 7814 hs

Abstract: transistor wu4 smd transistor wu1 smd wu1 MA 7815 transistor wu1 REGULATOR IC 7815 FOR maximum 50mA load current REGULATOR cw 7812 wu4 diode REGULATOR IC 7812 SMD
Contextual Info: L9952GXP Power management system IC Features • Two 5V low-drop voltage regulators 250mA, 100mA continuous mode ■ Low stand-by current: VBAT stby, 7µA; ,V1 stby, 45µA, (75µA in cycl. sense ■ Window watchdog and fail-safe output ■ Interrupt output

Contextual Info: PART NUMBER: ± 3g Tri-axis Accelerometer Specifications KXSS5-2057 Rev. 4 Feb-2013 Product Description The KXSS5-2057 is a Tri-axis, silicon micromachined accelerometer with a full-scale output range of +/-3g 29.4 m/s/s . The sense element is fabricated using Kionix’s proprietary plasma micromachining process

AN2278

Abstract: ST72325 RLINK st7 DB9 Sensor connector LM135-LM235-LM335 AN974 LM135 LM235-LM335 M24C02 ST24C02
Contextual Info: AN2278 Application note Temperature sensor application using ST LM135 Introduction This application note describes how to develop a temperature sensor application using the ST LM135 temperature sensor. Application development was done on a Raisonance REva