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    070N06L Search Results

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    070N06L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP070N06LG

    Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Vyrian IPP070N06LG 10,404
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    070N06L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original
    ipb070n06lipp070n06lpg-to263-3pg-to220-3+5070n06lpg-to-220-3g2ns070n0d53a PDF

    IEC61249-2-21

    Abstract: PG-TO220-3 070N06L
    Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original
    ipb070n06lipp070n06liec61249-2-21pg-to263-3+2pg-to220-3070n06l PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    070N06L

    Abstract: DIODE smd marking Ag PG-TO220-3 070N0
    Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature


    Original
    ipb070n06lipp070n06lpg-to263-3pg-to220-3+3070n06ldiode smd marking ag070n0 PDF

    Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original
    ipb070n06lipp070n06lpg-to263-3070n06l+1pg-to220-3 PDF

    070N06L

    Abstract: SMD MARKING ASF
    Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original
    ipb070n06lipp070n06lpg-to263-3070n06l+2pg-to220-3smd marking asf PDF