070N0 Search Results

IEC61249-2-21

Abstract: IPB066N06N IPP066N06N C2320
Contextual Info: 070N06N G 070N06N G 070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

067N08N

Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
Contextual Info: 070N08N3 G 070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

070N06L

Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature

DD 127 D TRANSISTOR

Abstract: IPB066N06N IPP066N06N g33 smd 860
Contextual Info: 070N06N G 070N06N G 070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

IEC61249-2-21

Abstract: PG-TO220-3 070N06L
Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

070N06L

Abstract: DIODE smd marking Ag PG-TO220-3 070N0
Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature

DD 127 D TRANSISTOR

Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
Contextual Info: 070N06N G OptiMOS Power-Transistor 070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

067N08N

Abstract: 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40
Contextual Info: 070N08N3 G 070N08N3 G IPB067N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

DD 127 D TRANSISTOR

Abstract: IPB066N06N IPP066N06N g33 smd 860
Contextual Info: 070N06N G 070N06N G 070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature

Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

070N06L

Abstract: SMD MARKING ASF
Contextual Info: 070N06L G 070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature