03NG Search Results

BUK9Y14-40B

Contextual Info: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This

BUK75

Abstract: BUK754R0-55B BUK764R0-55B
Contextual Info: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

7905 datasheet

Abstract: BUK7105-40AIE BUK7905-40AIE SOT426
Contextual Info: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 03 — 23 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS

buk954r2

Abstract: BUK95 BUK954R2-55B
Contextual Info: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9609-40B

Abstract: BUK95
Contextual Info: BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9212-55B

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

7905

Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
Contextual Info: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and

BUK9540-100A

Abstract: BUK9640-100A
Contextual Info: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:

D 795 A

Contextual Info: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

BUK9506-40B

Abstract: BUK9606-40B A7550
Contextual Info: BUK95/9606-40B TrenchMOS logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9512-55B

Abstract: BUK9612-55B
Contextual Info: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9516-75B

Abstract: BUK9616-75B
Contextual Info: BUK95/9616-75B TrenchMOS logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK762R7-30B

Abstract: BUK752R7-30B BUK7E2R7-30B
Contextual Info: BUK75/76/7E2R7-30B TrenchMOS standard level FET Rev. 03 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

03NG

Abstract: 369D NTD5803NG NTD5803NT4G
Contextual Info: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 10.1 mW @ 5.0 V 54 A 7.2 mW @ 10 V

BUK95

Abstract: BUK9506-40B
Contextual Info: TO -22 0A B BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK95

Abstract: BUK952R8-30B
Contextual Info: TO -22 0A B BUK952R8-30B N-channel TrenchMOS logic level FET Rev. 3 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK95

Abstract: BUK9E3R2-40B
Contextual Info: I2P AK BUK9E3R2-40B N-channel TrenchMOS logic level FET Rev. 5 — 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK95/9610-100B TrenchMOS logic level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 01 — 25 July 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS

55b2

Contextual Info: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.

10804

Contextual Info: BUK9207-30B TrenchMOS logic level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

55B2

Abstract: MBL798
Contextual Info: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.

255L1

Contextual Info: BUK9209-40B TrenchMOS logic level FET Rev. 01 — 13 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

buk9l06-55b

Abstract: MBL370 buk9l06
Contextual Info: BUK9L06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data M3D794 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low