03MAY1 Search Results

Contextual Info: TH IS DRAWING IS UNPUBLISHED. COPYRIGHT 2011 LOC RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. DIST / HY A REVISIONS P LTR J DATE DWN APVO 03MAY13 SW WK DESCRIPTION INITIAL RELEASED 19 18 CONNECTOR A CONNECTOR B 1 1 7 7 0 0 1 9 -8

Contextual Info: 107-68875 Packaging Specification 03May11 Rev E Mini I/O PLUG KIT 1. PURPOSE 目的 Define the packaging specifiction and packaging method of Mini I/O PLUG KIT. 订定 Mini I/O PLUG KIT 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

dvi plug spec

Abstract: DisplayPort Plug dp to dvi SOURCE LABLE
Contextual Info: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. H: - 00 LTR D E S C R IP T IO N A7 REVISED PER DATE ECO-11-005027 DWN APVD RK HMR 03MAY1 200+10 D HDD HDD

Contextual Info: 2 TH I S DRAW I NG I S UN P UB L I S H E D . T I9 R E L E A S E D FOR P U B L I C A T I O N BY COPYRIGHT LOC R E V I S IONS Dl ST CM 53 ALL RIGHTS RESERVED. LTR DATE DWN APVD 03MAY11 RK HMR DE SC R I P T I O N REVISED PER ECO-11-005294 NYLON, UL94V - 2 , NATURAL.

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

s8058

Contextual Info: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance

Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd

SQS404EN-T1-GE3

Abstract: marking D3 TSOP-6 PPAK1212
Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

land pattern for TSOP input id

Abstract: SQS423EN-T1-GE3
Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V

Contextual Info: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V

6189B

Abstract: CB4075
Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

si7415dn-t1-ge3

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

si7615

Abstract: SI7615ADN SI7615A
Contextual Info: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8

SiSA18DN

Contextual Info: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: Si7107DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0108 at VGS = - 4.5 V - 15.3 0.015 at VGS = - 2.5 V - 13.0 0.020 at VGS = - 1.8 V - 11.2 PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)

Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2

Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package

Contextual Info: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET