02N TRANSISTOR Search Results

Contextual Info: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:

Contextual Info: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:

Contextual Info: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:

HT48R01B

Abstract: HT46R02B PWM PA5 HT46R01B ht48r01n HT48R01 HT-48
Contextual Info: HT46R01B/02B/01N/02N HT48R01B/02B/01N/02N Small Package 8-Bit OTP MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features CPU Features · LIRC oscillator function for watchdog timer · Operating voltage:

NSVS615

Abstract: IC TX 434 MCF21 CDP-TX-02N rx module 434 rx 434 TRANSMITTER circuit diagram for telemetry base water level indicator tx 434 TRANSMITTER CDP-TX-02AN IC TX 434 433 fm
Contextual Info: OPERATION GUIDE UHF Narrow band radio data module CDP-TX/RX-02N 434 MHz/458MHz Operation Guide Version 1.6 September 2003 CIRCUIT DESIGN, INC. 7557-1 Hotaka, Hotaka-machi, Minamiazumi, Nagano 399-8303 JAPAN Tel: + +81-(0)263-82-1024 Fax: + +81-(0)263-82-1016

02N60S5

Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A

Contextual Info: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

BFS67

Abstract: 310M ft06 HSC5458 200S A190 A192 A193 A390 T072
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE M A X . RATIINGS Ä 2 5 C II MIN. M A X Pc T 6 T T IDERATE FREE I'A E I Ic

310M

Abstract: CM601 02N 60P ft06 HSC5458 200S A190 A192 A193 A390
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

PLESSEY CLA

Abstract: gh160 FG48
Contextual Info: FEBRUARY 1996 PRELIMINARY INFORMATION DS4375-1.1 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 series is the latest family of gate arrays from GEC Plessey Semiconductors GPS . It consists of 14 fixedsize arrays with the option of building larger optimized arrays

microprocessors interface 8086 to 8251

Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

P2QFP100-GH-1420

Abstract: O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 CLA90000 transistors for oscillators
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

USART 8251 interfacing with 8051 microcontroller

Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

MM2102

Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I

ic sw01

Abstract: sw01 analog switch sw01fq SW01 SW02FQ sw02b sw02 sw-01fq SW-01 sw01f
Contextual Info: p m i S > W - O l / S W - 2 QUAD SPST JFET ANALOG SWITCHES TEMPERATURE COMPENSATED Ro n vs. analog input signals. The junction FET construction also reduces static discharge destruction prevalent in CMOS devices. FEATURES • • • • • • • •

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

sw02b

Abstract: SW02F sw01fq DG201 ADG201 SW-02FQ
Contextual Info: SW -01/SW -02 QUAD SPST JFET ANALOG SWITCHES TEMPERATURE COMPENSATED R o n D&SBBB M o n o l i t h ic.s I vs. analog input signals. The junction FET construction also reduces static discharge destruction prevalent in CMOS devices. FEATU R ES • • •

P2QFP100-GH-1420

Abstract: IR 1838 3v with 3 pins
Contextual Info: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with

transformer 220V to 24V

Abstract: pw 380v 04 x
Contextual Info: ø30 Series Switches & Pilot Lights Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments • Degree of protection: IP65 • UL, CSA approved, and EN compliant. Applicable Standards Mark File No. or Organization UL 508

Contextual Info: 19-0271; RevO; 7/94 V M yjX I>kl Precision, 8-Channel/Dual 4-C hannel, H igh-Perform ance, CMOS Analog M u ltip lexers The MAX308/MAX309 are fabricated with Maxim’s improved 44V silicon-gate process. Design improve­ ments yield extremely low charge injection less than