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    01N100D Search Results

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    IXYS Corporation IXTY01N100D

    MOSFET N-CH 1000V 400MA TO252AA
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    DigiKey IXTY01N100D Tube 1
    • 1 $4.91
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    Mouser Electronics IXTY01N100D
    • 1 $4.93
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    Newark IXTY01N100D Bulk 173 1
    • 1 $4.91
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    TTI IXTY01N100D Tube 350
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    TME IXTY01N100D 1
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    IBS Electronics IXTY01N100D 350
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    IXYS Corporation IXTU01N100D

    MOSFET N-CH 1000V 400MA TO251
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    Chip Stock IXTU01N100D 4,400
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    IXYS Corporation IXTP01N100D

    MOSFET N-CH 1000V 400MA TO220AB
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    DigiKey IXTP01N100D Tube 1
    • 1 $8.25
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    Mouser Electronics IXTP01N100D 214
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    TTI IXTP01N100D Tube 300
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    TME IXTP01N100D 329 1
    • 1 $7.88
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    ComSIT USA IXTP01N100D 8
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    Vyrian IXTP01N100D 54
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    IXYS Corporation IXTY01N100D-TRL

    MOSFET N-CH 1000V 400MA TO252AA
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    DigiKey () IXTY01N100D-TRL Cut Tape 1
    • 1 $4.91
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    IXTY01N100D-TRL Reel 2,500
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    IXTY01N100D-TRL Digi-Reel 1
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    Mouser Electronics IXTY01N100D-TRL
    • 1 $4.93
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    TTI IXTY01N100D-TRL Reel 2,500
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    IBS Electronics IXTY01N100D-TRL 2,500
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    Littelfuse Inc IXTP01N100D

    Mosfet, N-Ch, 1Kv, 0.4A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:400Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTP01N100D
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    Newark IXTP01N100D Bulk 1
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    RS IXTP01N100D Bulk 8 Weeks 50
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    01N100D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    01N100D

    Abstract: high voltage mosfet n-channel
    Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C


    Original     		01N100D O-220AB high voltage mosfet n-channel PDF

    01N100D

    Abstract: 98809b ON 534 TO252 01N1
    Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000


    Original     		01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1 PDF

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D PDF

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Contextual Info: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10 PDF