00GLB Search Results

Contextual Info: DAICO INDUSTRIES INC blE D HbCmSO 00Glb7S 5 2 e] • DAI FEATU RES ■ 2 0 0 - 9 0 0 MHz ■ 2 Watts CW Thru ■ 0.3 dB Insertion Loss ■ Non-Reflective U tl'ili ■ TTL Driver ■ 14 Pin DIP RF1 NC 1 GND 2 +5V 3 "0" CONT 4 -15V 5 RF2 (NO) 7 GND 6 50 n

Contextual Info: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01

Contextual Info: S-M 0 S S Y S T E M S INC SbE D m 7 cG 2 tlG,i QQQ1L17 IST H S M O SED1181 F la/ D i • f '- S 'A - / ? - o 7 CMOS DOT MATRIX EXTENSION LCD DRIVER • 64-bit high voltage output • Display duty factor: static to 1/32 • CMOS high-voltage process O’?’

imo TDMB

Abstract: PBM3911
Contextual Info: ERICSSON COMPONENTS INC lb E D • 3373bô0 QGDlbHö 3 ■ ERICSSON ^ September 1989 T -7 S -0 1 -I5 PBM3911 Voice-switched Speakerphone Circuit Description Key Features The PBM 3911 is a CMOS integrated circuit, designed for voice switched speaker­ phone systems. The circuit incorporates complementary digitally controlled attenuators

Contextual Info: 1 Megabit High Speed CMOS SRAM D EN SE-PA C DPS 128M8CnY/BnY, DPS128X8CA3/BA3 M I C R O S Y S T E M S DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .

Contextual Info: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1

EQUIVALENT OF SR240

Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
Contextual Info: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier

AL339

Abstract: 50-PIN
Contextual Info: DENSE-PAC MICROSYSTEMS 2 Megabit C M O S SRAM DPS 128X 16n 3 DESCRIPTION: The D PS128X16n3SRAM "ST A C K " modules are a revolutionary new memory subsystem using Dense-PacMicrosystems'ceramicStackable LeadlessChip Carriers SLCC . Available in straight leaded, "J" leaded

SK70720PE

Abstract: abb rd2 BL-14 b4700
Contextual Info: DA TA SHEET AUGUST 1997 SK70720/SK70721 Revision 1.0 Multi-Rate DSL Data Pump Chip Set ral Description The Multi-Rate DSL Data Pump is a complete, variablerate transceiver that provides full duplex communication on two wires using echo-canceller-with-hybrid and 2B1Q

5012JN

Abstract: APT5012JNU3 APTS012JNU3 APT5012
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T

Contextual Info: U PER I COM PI74FCT827T, PI74FCT828T (25Ü Series PI74FCT2827T (25Q Series) PI74FCT2828T 111 M f 111111111111111111111111111 M 11111111111111111 Fast CMOS 10-Bit Buffers Product Features: • PI74FCT827/828/2827/2828T are pin compatible with

Contextual Info: ^EDI EDI8F82046C ELECTRONIC DESIGNS INC. ' Commercial Sixteen Megabit SRAM Module 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout The EDI8F82046C is a 16 Mega bit CMOS Static RAM based on four 512Kx8 Static RAMs mounted on a raiU lllM E W

XCKJ

Abstract: XCK-L txc 7a XCK-L option Digital Alarm Clock by ttl LIMING RELAY LIMING VOLTAGE RELAY n191 TXC-02050 F1785
Contextual Info: J T 2 F D e v ic e 6 Mbit/s JT2 Framer TXC-03702B DATA SHEET Product Preview 1 1 •■■!:.:= DESCRIPTION = The JT2 Framer JT2F is a CMOS VLSI device that provides the functions needed to frame a wideband payload to ITU G.704 and the NTT-specified 6312 kbit/s

APT5012JNU2

Abstract: ST-200 transformer DIODE BAT 17
Contextual Info: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m

74LS80

Abstract: 74LS198 74LS150 74LS94 OAI32 74LS179 TTL 74LS198 MUX21H TTL 74ls138 to 7 segment 7476 3 bit ripple counter
Contextual Info: 4flE ]> • 77MLjbciO 0001L3M 4bO « P C H T- °J EK-044-9004 CMOS Gate Array 5GV Series RICOH CORP/ ELECTRONIC The RICOH gate array 5GV series complies with the CMOS 1.5ju rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with