00BFL Search Results

BF660

Abstract: transistor 558
Contextual Info: 7110ö2L> 00bflfe,37 024 B P H IN BF660 J V_ SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits.

Contextual Info: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which

fet junction n-channel transistor

Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
Contextual Info: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1

Contextual Info: SIEMENS SIPMOS Power Transistors • • BUZ 84 BUZ 84 A N channel Enhancement mode Type V ds Id BUZ 84 800 V BUZ 84 A 800 V Package 1> Ordering Code Tc ^OS on 5.3 A 25 "C 2.0 £2 TO-204 AA C67078-A1013-A2 6.0 A 29 "C 1.5 n TO-204 AA C67078-A1013-A3 Maximum Ratings

Contextual Info: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers

Contextual Info: rZ J S G S -T H O M S O N * 7 0 * llQ g li2 ( 0 II IL i( g r a iD ( @ i M28C17 PARALLEL ACCESS 16K (2K x 8) EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 70ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 100^A

Contextual Info: £ ÿ j S G S ‘ T H O M S O N Hffi 5 [gfL.II(aiïïKÎ(B)M(Sg M27W401 VERY LOW VOLTAGE 4 Megabit (512K x 8) OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME: - 150ns(T a =0 to 70 °C) - 200ns (T a = -20 to 70 °C) - LOW POWER "CMOS” CONSUMPTION:

Contextual Info: £ ÿ j S G S ’T H O M SO N leænLimowigs M27C2001 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(j.A

m2716a

Contextual Info: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED

Contextual Info: SGS-THOMSON n»i Li TO K!ID®i M27V101 LOW VOLTAGE 1 Megabit (128K x 8 UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 15mA - Standby Current 20|*A ■ SMALL PACKAGES for SURFACE

uPD70280

Abstract: uPD70116
Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿¿PD70280 V51 16-BIT M ICROPROCESSOR DESCRIPTION ThejiPD 70280 V51 is a 16-bit m icroprocessor containing a CPU equivalent to the ¿iPD70116H {V30HL™)and peripheral functions for the PC/XT™ on a single chip.

mosfet marking code gg

Abstract: marking g1s marking code g1s
Contextual Info: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

blv 33 transistor

Abstract: BLV25 rf 2222 vp1020 multilayer
Contextual Info: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;

FZJ timer

Abstract: M28C64C M28C64X PDIP28 S028 Z3A10
Contextual Info: M28C64C M28C64X r= J S C S -THO M SO N *7 Æ > PARALLEL ACCESS 64K 8K x 8 EEPROM • FAST ACCESS TIME: 150ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION - Active Current 30mA - Standby Current 10OpA ■ FAST WRITE CYCLE - 32 Bytes Page W rite Operation

FZJ 101

Abstract: LM358 SGS lm358 sum LM158A LM258 circuit diagram lm358 lm358 thomson LM158 LM258A LM258N
Contextual Info: rZ J S G S -T H O M S O N M m L M 1 5 8 , A - L M 2 5 8 , A L M 3 5 8 , A IIL I § » iN O ^ LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED . LARGE DC VOLTAGE GAIN : 10OdB > WIDE BANDWIDTH (unity gain : 1.1 MHz (temperature compensated)

lm324

Abstract: 7R2R237 ic lm324 LM324 14 PIN DIAGRAM LM324 circuit DIAGRAM LM324 ic operational amplifier LM324 LM124 LM124A LM224
Contextual Info: S G S -T H O M S O N * 7 * LM 124,A - LM 224,A LM 324,A LOW POWER QUAD OPERATIONAL AMPLIFIERS : N DIP14 Plastic Package DESCRIPTION These circuits consist of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically for auto­

Contextual Info: H a C D P 6402, r r is S E M I C O N D U C T O R CMOS Universal Asynchronous Receiver/Transmitter UART August 1996 Features • Description Low Power CMOS C ircuitry.7.5mW (Typ) at 3.2M Hz (Max Freq.) at V q q = 5V • Baud Rate

Contextual Info: HD-15531/883 HARRIS S E M I C O N D U C T O R CMOS Manchester Encoder-Decoder September 1996 Features • Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Support of MIL-STD-1553

Contextual Info: 3 } H M - 6 5 1 2 / 8 8 3 2K x 8 Asynchronous CMOS Static RAM August 1996 Features • 6 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. T h e H M -6 5 1 6 2 /8 8 3 is a C M O S 2 0 4 8 x 8 Static Random

Contextual Info: if ì H A R R IS H M -6 5 1 8 S E M I C O N D U C T O R 1024 X 1 CMOS RAM August 1996 Features Description • Low Power Standby. 50|.iW Max The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

Contextual Info: Í5 1 H A R R HD-4702 IS S E M I C O N D U C T O R August 1996 CMOS Programmable Bit Rate Generator Features Description • HD-4702 Provides 13 Commonly Used Bit Rates The HD-4702 Bit Rate Generator provides the necessary clock signals for digital data transmission systems, such as a UART. It

Contextual Info: HM-6642 HARRIS S E M I C O N D U C T O R 5 1 2 x 8 CM O S PROM September 1996 Features Description • Low Power Standby and Operating Power - IC C S B . 100|iA ICCOP 20mA at 1 MHz The HM-6642 is a 512 x 8 CMOS NiCr fusible link

Contextual Info: flì HARRIS CDP1823, ^^30 S E M I C O N D U C T O R 128-Word x 8-Bit LSI Static RAM August 1996 Features • Description Fast Access Tim e The CDP1823 and CDP1823C are 128-word by 8-bit CMOS SOS static random-access memories. These memories are compatible with general-purpose microprocessors. The two

Contextual Info: HD-15531 HARRIS S E M I C O N D U C T O R CMOS Manchester Encoder-Decoder August 1996 Description Features • Support of MIL-STD-1553 • Data Rate 15531B .2.5 Megabit/Sec • Data Rate (155 3 1 ). 1.25 Megabit/Sec