Z3A10 Search Results

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 nm CMOS process and high speed circuit designing

rockwell 6512

Abstract: CPU R6502 t4806 microprocessor Rockwell R6500 R6505 R6503 ZP D1
Contextual Info: • 7011073 0 D n S 7 1 ATS * R K U H650X • R651X R650X and R651X Microprocessors CPU * Rockwell DESCRIPTION FEATURES The 8-bit R6500 microprocessor devices are produced with N-channel, silicon gate technology. Performance speeds are enhanced by advanced system architecture. This innovative

tower pro sg 90

Contextual Info: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

JD 1806

Abstract: M28C84-W
Contextual Info: Æ T SGS-THOMSON M28C64 * 7 # . o^fl S{B§ ii[yi(^în^(S)&SD(^ 64K (8K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: - 90ns at 5V - 120nsat 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

03CZ

Contextual Info: HM6216255H Series 262114-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-763 Z Preliminary Rev. 0.0 Mar. 27, 1997 Description The HM6216255H Series is an asynchronous high speed static RAM organized as 256-k word x 16-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology. It

a7532

Contextual Info: ¿ = 7 *7 Æ > S G S -1 H 0 M S 0 N M W iU Iê M M X Ê i M 27V 10 1 LOW VOLTAGE 1 Megabit 128K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100fiA

Contextual Info: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

1A15

Abstract: honeywell hr 20 HLX6408
Contextual Info: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)

Contextual Info: ADE-203-084G Z HM62W256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM Rev. 7.0 Jun. 1 9 ,1 9 9 5 HITACHI Features Ordering Information • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 pm Hi-CMOS process • High speed

Contextual Info: S G S -1 H 0 M S 0 N M28F151 [^ a g ^ ( Q g L [i W ( Q ) R { ]D © S 1.5 Megabit (192K x 8, Chip Erase) FLASH MEMORY PRODUCT PREVIEW • VALID MEMORY ADDRESS SPACE: OOOOOh to 2FFFFh ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp.