004MA Search Results

ic tba 220

Abstract: km6161002j KM6161002-17
Contextual Info: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)

STRAIN GAUGE

Abstract: 0-200mV tare "strain gauge" 10VA V430 led digital panel amp volt meter isolated 4 to 20ma analog transmitter circuit visipak ohms meter panel
Contextual Info: VISIPAKTM V434 Bridge/Strain Gauge Input, Digital Indicator Provides a Digital Display from Bridge & Strain Gauge mV Inputs Description Benefits Field Configurable Input Accepts 0-30mV, 0-200mV, + 15mV and +100mV Field Configurable Excitation Source 5V, 10V & 24VDC

Contextual Info: REV. 2.1 FS8802-DS-21_EN Datasheet FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter SEP 2006 FS8802 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan

TI41

Contextual Info: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)

E43028

Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

nc2d-p-ac24v

Abstract: NC2D-P-AC12V NC2D-JP-DC48V NC2D-AC100V 500va sine wave ups NC2D-JP-DC12V NC2D-JP-DC24V NC4D-AC100V NC2EBD-JP-DC24V NC2EBD-JP-DC12V
Contextual Info: NC 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves

Contextual Info: M O SE L V IT E L IC V62C21162048 128K x 16 LOW POWER, LOW VOLTAGE SRAM PRELIMINARY INFORMATION Features Description • ■ ■ ■ ■ ■ ■ ■ The V 62C 21162048 is a 2,097,152-bit static random-access memory organized as 131,072 words by 16 bits. Inputs and three-state outputs are

1N21A

Abstract: IN23B 1N22WB 1N23B 1N21D 1n21 1N21B 1n21br 1N23C 1N21BM
Contextual Info: 165- £ M « 1N21 1N21A 1N21B 1N21BM 1N21BMR 1N21BR 1N21C 1N21 CM 1N21CMR 1N21CR 1N21D 1N21 DM 1N21DMR 1N21DR 1N21B 1N21EM 1N21EMR 1N21ER 1N21F 1N21FM 1N21FMR 1N21FR 1N21G 1N21GM 1N21GMR 1N21GR 1N21WD 1N21WDM 1N21WB 1N21WBM 1N21WF 1N21WFM 1N21TC 1N21WGM 1N22

1N21B

Abstract: 1N22 1N22WB IN23B 1N21A 1N21 1N21BR 1N21D 1n21gr 1N21C
Contextual Info: 165- £ M « 1N21 1N21A 1N21B 1N21BM 1N21BMR 1N21BR 1N21C 1N21 CM 1N21CMR 1N21CR 1N21D 1N21 DM 1N21DMR 1N21DR 1N21B 1N21EM 1N21EMR 1N21ER 1N21F 1N21FM 1N21FMR 1N21FR 1N21G 1N21GM 1N21GMR 1N21GR 1N21WD 1N21WDM 1N21WB 1N21WBM 1N21WF 1N21WFM 1N21TC 1N21WGM 1N22

Contextual Info: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation

xxww

Abstract: KM68B257AJ-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 clb 4 m s []0 1 7 b 0 1 7 5 H m s h g k BiCMOS SRAM KM68B257A 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa s t A c c e s s T im e : 8 , 9 , 1 0 , 12n s M a x. • Low P o w er D issipation

HY62U16100

Abstract: HY62U16100LLR2-I
Contextual Info: "HYUNDAI h y 6 2 V 1 6 1 0 0 - I /h y 6 2 U 1 6 1 0 0 -(I) 1 Series 64Kx16bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V16100-(l)/HY62U16100-(l) is a high­ speed, low power and 1M bits CMOS SRAM organized as 65,536 words by 16 bits. The HY62V16100-(I)/ HY62U16100-(I) uses sixteen

package tsop1 28

Abstract: AX1127 0R015 PACKAGE DIMENSIONS 100-TQFP-1420A
Contextual Info: PACKAGE DIMENSIONS Unit : mm/inch 445 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -3 0 0 2 8 -D IP -4 0 0 446 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -6 0 0 B 3 2 -D IP -4 0 0 447 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 3 2 -D IP -6 0 0

28DIP300

Abstract: 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B
Contextual Info: P A C K A G E DIMENSIONS Unit : mm/inch 24-DIP-300 485 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-300 486 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-600B 487 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 32-DIP-600 488 ELECTRONICS

V438

Abstract: visipak led moving message display circuits c action instruments visipak V438-0000 digital Water Meter V438-3000 Eurot 10VA Eurotherm
Contextual Info: VISIPAK V438 TM DC Input Digital Indicator Provides a Digital Display of Process Variables from DC Voltage and Current Inputs Description Benefits Field Configurable Input 4-20mA, 1-5V, 0-5V& 0-10V 4½ Digit Display for +199990 Count Spans 4 Visual Alarm Points with

Contextual Info: Fo r tun e FS8802 Semiconductor Corporation 富晶半導體股份有限公司 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Features General Description 1.0V Low Start-up Input Voltage at 1mA Load Deliver 3.3V at 100mA with 1V Input Voltage

schematic diagram converter input 24v to 12v

Abstract: FS8802CS
Contextual Info: Fo r tun e FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Semiconductor Corporation 富晶半導體股份有限公司 General Description Features The FS8802 is a compact, high-efficiency, step-up DC/DC converter that operates from an

visipak

Abstract: action instruments visipak 4-20ma DIGITAL CURRENT SOURCE V430-0000 V430-2000 V430 V430-3000 10VA 0-20mA 0.5V 4-20ma controller
Contextual Info: VISIPAKTM V430 Analog Input, Rate Indicator/Totalizer/ Batch Controller Provides a Digital Display of Rate or Totalized Count from a DC Current or Voltage Input Description Benefits Field Configurable Input: 4-20mA, 1-5V, 0-5V, or 0-10V 6 Digit Display for Counts

Contextual Info: SMM-120-02-^ D-P SM M —12 4 - 0 2 - S - S auria^e S M . • . . • T j . I l i i n o H I G H R High reliability Tiger Eve contacts Ava. able with cpkonal Pick-anci-Place pads SPECIFICATIONS Materials:

nc4ebd-jpl2-dc12v

Abstract: NC2D-JPL2-DC48V NC2D-JPL2-DC24V nc2d-jp-dc24v NC2D-JP-DC48V NC2D-JP-DC12V 384MH NC4EBD-L2-DC100V 173MH
Contextual Info: NC FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves

cd 1619 CP fm radio

Abstract: cd 1619 C2 fm radio cd 1619 CP GE 8111 JRC 082 SEC80 DBL 1021 LCD 1601 display NJU6466 NJU6466C
Contextual Info: N JU 64 6 6 PRELIMINARY 24-CHARACTER 2-LI NE DOT MATRIX LCD CONTROLLER DRIVER I GENERAL DESCRIPTION The NJU6466 is a 1 Chip Dot Matrix LCD controller dri­ ver for u p to 24-character 2-line display. It contains voltage converter, microprocessor inter­ face circuits, instruction decoder controller, character

KM6164002j

Abstract: KM6164002 ISE Electronics
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b 7 E D • 7 ^ 4 1 4 2 G O lT b E M KM616513 2 5 1 SM6K CMOS SRAM 32,768 WORD x 16 BIT FEATURES GENERAL DESCRIPTION • F a s t A cc e s s T im e 15, 17, 20, 25ns m ax. • Low P o w er D is sip a tio n S tandb y (TTL) : 5 0m A (m ax.)

R0310

Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
Contextual Info: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)