1N21A
Abstract: IN23B 1N22WB 1N23B 1N21D 1n21 1N21B 1n21br 1N23C 1N21BM
Contextual Info: 165- £ M « 1N21 1N21A 1N21B 1N21BM 1N21BMR 1N21BR 1N21C 1N21 CM 1N21CMR 1N21CR 1N21D 1N21 DM 1N21DMR 1N21DR 1N21B 1N21EM 1N21EMR 1N21ER 1N21F 1N21FM 1N21FMR 1N21FR 1N21G 1N21GM 1N21GMR 1N21GR 1N21WD 1N21WDM 1N21WB 1N21WBM 1N21WF 1N21WFM 1N21TC 1N21WGM 1N22
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3060mhz1n21a1n21b1n21bm+9ln21bt1n21bmr1n21brin23b1n22wb1n23b1n21d1n211n23c
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1N21B
Abstract: 1N22 1N22WB IN23B 1N21A 1N21 1N21BR 1N21D 1n21gr 1N21C
Contextual Info: 165- £ M « 1N21 1N21A 1N21B 1N21BM 1N21BMR 1N21BR 1N21C 1N21 CM 1N21CMR 1N21CR 1N21D 1N21 DM 1N21DMR 1N21DR 1N21B 1N21EM 1N21EMR 1N21ER 1N21F 1N21FM 1N21FMR 1N21FR 1N21G 1N21GM 1N21GMR 1N21GR 1N21WD 1N21WDM 1N21WB 1N21WBM 1N21WF 1N21WFM 1N21TC 1N21WGM 1N22
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3060mhz1n21a1n21b1n21bm+10ln21bt1n21bmr1n21br1n221n22wbin23b1n211n21d1n21gr1n21c
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1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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1n23 diode1n78 diode1n23wgmr1n26a diode+61n21we1n26bka2to1n415dma4148-0421n23 jan
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1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
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1n32051n25xx1n78xdma649x-xxx+101n23 diode1n53ar1n26a diodesilicon point contact mixer diodes1n4151n832an178kaba1n23wg1n26br
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1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
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1n23c1n23c diode1n23 diode holder1n23 diode+6ci 3060silicon point contact mixer diodes1n23we1n21e1n23cr1n1132
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1N23C diode
Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure
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do-22do-23do-37ardn21h+141n21hr1n1501n1601n150r1n160r1n23c1n23c diodediode ku 14901n25 diode1n26a diode1n415c1n42941n4603r1n26br
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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1n23 diode1n231n53ar1n3747+61n11321n53r1n415c1n4151n261n23 alpha
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