0044S Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. D RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 6 5 4 3 2 ,19 LOC ALL RIGHTS RESERVED. DIST REVISIONS 47 AD P LTR F HOUSING. LIQUID CONT A C T S . GROUND D HIGH BUSSES. CONT A C T S E CONTACT PHOSPHOR 0 . 0044S]

Contextual Info: LM H 0044 LMH0044 SMPTE 292M / 259M Adaptive Cable Equalizer Texa s In s t r u m e n t s Literature Number: SNLS216D 9 LMH0044 Sem iconductor SMPTE 292M / 259M Adaptive Cable Equalizer General Description Features T he L M H 0044 S M P T E 292M /2 5 9 M ad a ptive cable e q u a lize r

K3L10

Contextual Info: M 3D E 271 F5 Î H O tm A S fll R R 3 7 3 IS S E M I C O N D U C T O R IH kZCD4020BMS,CD4024BMS CD4040BMS HA R R I S S E M I C O N D SE C T O R 5 0 E D Decem ber 1992 CMOS Ripple-Carry Binary Counter/Dividers 'T - 4 6 - Z S - n Pinouts Features CD4020BMS TOP VIEW

BUK441

Abstract: BUK441-60A BUK441-60B 3909
Contextual Info: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.

IC CD4011B

Abstract: BY71
Contextual Info: T! HA RR IS S E M I C O N D S E CT OR SÔE ]> HARRIS • M3 DE 27 1 D O L m S b B 3Sfl « H A S C D 4 0 1 8 B M S S E M I C O N D U C T O R CMOS Presettable Divide-By- “N” Counter December 1992 T=- U S -2 3 - 2 - 1 Features Description • High Voltage Type 20V Rating

MSC SDA

Abstract: SDA9092 DS011 DD011
Contextual Info: 1 -5 2 S IE H E N S A K T IE N G E S E LLS C H A F S IE D • fl2 3 S b G 5 QOMMSET 2 4 5 « S I E G SIEMENS Memory Output Interface SDA 9092 Preliminary Data MOS 1C Type Ordering code Package SDA 9092 Q67100-H8353 PL-CC-68 In conjunction with the integrated circuits MIIF Memory Input Interface MSC (Memory

BUK441

Abstract: BUK441-60A BUK441-60B
Contextual Info: -7 ^ 3 9 -O Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.

Contextual Info: TOSHIBA TMP93CS44/TMP93CS45 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CS44F / TMP93CS45F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CS44 / TMP93CS45 are high-speed, advanced 16-bit m icrocontrollers developed for controlling m edium to large-scale equipm ent. The TMP93CS45 does not

m3d l3

Contextual Info: H A RR IS S E M I C O N D S E C T O R SflE J> • 43 022 71 0 G 4 4 5 7 2 3b0 H H A S U U 4 0 79 B M S !ü CMOS Quad AND/OR Select Gate December 1992 Pinout Features • High Voltage Type 20V Rating CD4019BMS TOP VIEW • Medium Speed Operation tPHL = tPLH a 60ns (typ.) at

ICAN-6166 COSMOS MSI Counter and Register Design and

Abstract: ICAN-6166 C04017B ican6166
Contextual Info: SöE D • t4 3 0 5 E 7 1 f m H « -M J S E M I C O N D U C T O R H A R R IS A R R I 004M 553 S E M IC O N D IHAS 40T S SEC TO R CD4017BMS CD4022BMS -r-H 5 -2 3 -Z CMOS Counter/Dividers December 1992 Pinouts Features CD4017BMS TOP VIEW U • High Voltage Types (20V Rating

Contextual Info: HARRIS SEMICOND SECTOR SflE D l 4302271 0044535 4 T3 « H A S CD4015BMS HARRIS U • S E M I C O N D U C T O R CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output Decem ber 1992 " F z K .- O S - o '= > Pinout Features CD4015BMS TOP VIEW

SIEMENS AVR

Abstract: SIEMENS AVR GENERATOR SDA9241 SDA9095 smd b3u 00M4
Contextual Info: SIEMENS AKTIENGESELLSCHAF 51E D • flS35bQS Q04MSSS 337 ■ SIEG -F 5 2 r3 3 > -O S SIEM EN S Memory Sync Controller SDA 9095 Preliminary Data CMOS 1C Type Ordering code Package SDA 9095 Q67100-H8383 PL-CC-44 As COMS 1C, the Memory Sync Controller MSC is part of the Feature Box with a memory

K 3911

Abstract: BUK451-60A BUK451-60B T0220AB
Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: ANALO G D E V IC E S 800 MHz, 50 mW Current Feedback Amplifier AD8001 □ FUNCTIONAL BLOCK DIAGRAM 8-Pin Plastic Mini-DIP and SOIC FE A TU R ES E x c e lle n t V id e o S p e c ific a tio n s RL = 150 Q, G = +2 G a in Flatn es s 0.1 dB to 100 M H z 0 .0 1 % D iffe re n tia l G a in Erro r

AM486

Abstract: 80486DX amd 17852 80486dx memory interfacing 8086 microprocessor pin diagram Micro Linear application note 33 80486DX architecture A80486dx CACHE MEMORY FOR 8086
Contextual Info: bSE D 0257525 G044234 PRELIMINARY 14T An d i ADVANCED MICRO DEVI CES- Am486 DX Advanced Micro Devices High-Performance, 32-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Binary Com patible with Large Software Base — M S-DOS, OS/2, Windows — UNIX, W indows NT

SIEMENS 3TB

Abstract: SDA9091 siemens 3tb 34 15 siemens 3tb 40
Contextual Info: T -5 2 -1 5 SIEMENS AKTIENGESELLSCHAF SIE t • 823SbOS OOMMSlb b17 B S I E C SIEMENS Memory Input Interface SDA 9091 Preliminary Data NMOS IC Type Ordering code Package SDA 9091 Q67100-H8352 PL-CC-68 The NMOS component SDA 9091 constitutes the memory input interface of an upgraded

BUK439-60A

Abstract: tl 494 convertor
Contextual Info: Philips Components BUK439-60A Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 PowerMOS transistor S P H I L I P S I N T E R N A T I O N A GENERAL DESCRIPTION PINNING - SOT93 PIN 1 7 1 1 2 b Q 0 M 4 S 5 4 f l b ? M SYM BO L

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

BVJ 47

Abstract: transistor B42 BUK442 BUK442-60A BUK442-60B 3909 d044
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor SbE T> INTERNATIONAL PHILIPS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope,