003S3 Search Results

smd transistor cy 813

Abstract: TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s
Contextual Info: 47E D SIEMENS • fl235b05 003S3fl5 4 ■ S I E 6 SIEMENS AKTIEN6ESELLSCHAF ^ ¿ 6 - 0 3 1C for Inductive Proximity Switches with Short-Circuit Protection TCA 505 Bipolar IC Preliminary Data Features • • • • • • • • • • Wide supply voltage of 31 to 4.5 V

TCA 205 N

Abstract: TCA 200 y
Contextual Info: M7E D ÔE3SbOS 003S372 b • SIEG SIEMENS AKTIENGESELLSCHAF TCA 205 Proximity Switch Bipolar 1C Features • • • • • • Large supply voltage range High output current Antivalent outputs Adjustable switching distance Adjustable hysteresis Turn-on delay

Contextual Info: Lipped Straight 770-001S3 and 770-003S3 Type 3 Flexible Polyolein Straight Lipped Adapter Shrink Boots, Standard Type 3 Flexible Polyolein For General Duty Applications  General purpose harnessing Economical lexible polyolein boots it most standard shrink boot adapters, including M85049

Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,

ADE 7816

Abstract: transistor b616
Contextual Info: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION The M 35052-XXXSP/FP is TV screen display control 1C w hich can PIN CONFIGURATION TOP VIEW be used to display inform ation such as num ber of channels, the date

Contextual Info: F IN A L ü Am7942 Advanced Micro Devices Subscriber Line interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ -1 9 V to -5 8 V battery operation ■ Receive current gain = 200 ■ ■ Programmable loop detect threshold

HPB100474E

Abstract: JJPB100474E JUPB100474E nec A2C
Contextual Info: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. bM27525 GG3S37b G73 « N E C E jjPB100474E 1024 X 4-Bit 100K ECL RAM Description Pin Configurations The /JPB100474E is a very-high-speed 100K in terface ECL RAM organized as 1024 words by 4 bits and designed w ith noninverted, o pen -em itter o utputs and

Contextual Info: < £ 2 ¡ L P r o d u c t S p e c if ic a t io n œ Z86E07 CMOS Z8 8-BlT OTP _ MICROCONTROLLER FEATURES • Low-Cost, 8-Bit CMOS MCU OTP Support for Z86C07 ■ 18-Pin Package (DIP, SOIC) ■ 2 Kbytes of One-Time-PROM

KM48C512DJ

Abstract: G0353
Contextual Info: K M 4 8 C 5 12 D J CMOS DRAM 512K x 8 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

transistors ON 4673

Abstract: rfd16N10 lo16a
Contextual Info: HA R R I S S E M I C O N D S E C T O R 2 ] H A R R MOE D • M 3 0 S 2 7 1 G.D3S375 ö M H A S I S August 1991 R F D 1 6 N 1 0 . R F D 1 6 N 1 0 S M N-Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Features Packages TO-2S1AA TOP VIEW • 16A, 100V

diode sy 200

Abstract: UCM0J
Contextual Info: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

CNW83

Abstract: CNW82 phototransistor philips BS415 BS7002 UBB03
Contextual Info: Product specification Philips S em iconductors Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

Optocoupler 601

Abstract: UC6903 IEC-65 BS415 BS7002 CNW84 CNW85 VDE0884 optocoupler CNWB
Contextual Info: Product specification Philips Semiconductors Heavy duty optocouplers CNW84/CNW85 FEATURES • • • • • • • Minimum 2 mm isolation thickness between emitter and receiver A wide body DIL encapsulation with a pin distance of 10.16 mm An external clearance of 9.6 mm

u035

Abstract: VDE 0303 Teil 31 85630 B5415 CNW138 Optocoupler 601 BS415 BS6301 BS7002
Contextual Info: P h ilip s Sem ico nd ucto r» Product specification Wide body, high isolation/high-gain optocouplers CNW13A/CNW139 u y w i jö /o n w ij s FEA TU R ES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of

DH3724CN

Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
Contextual Info: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369

Contextual Info: MITSUBISHI MICROCOMPUTERS M35045-XXXSP/FP S C R E E N C H A R A C T E R a n d P A T T E R N D IS P L A Y C O N T R O L L E R S D E S C R IP T IO N The M 35045-XXXSP/FP is a TV screen display control 1C. It uses a PIN CONFIGURATION TOP VIEW silicon gate C M OS process and is housed in a 20-pin s h rin k DIP

Contextual Info: FIN AL a Am7943 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ Two-wire impedance set by single external impedance ■ Current gain = 200 ■ ■ Programmable loop detect threshold

Contextual Info: KM48C5 1 2DJ CMOS D R AM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

1N6528

Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
Contextual Info: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­

Contextual Info: P hilips Sem iconductors Product specification W ide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm • 11 MHz bandwidth

Contextual Info: Philips Semiconductors P rod uct sp e c ific a tio n W ide body, high isolation/high-gain optocouplers CNW 138/CNW 139 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm •

Contextual Info: P rod uct sp e c ific a tio n P h ilip s S e m icon ducto rs CNR50 Dedicated IC-optocoupler FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation with a pin distance of 10.16 mm • A clearance of 9.6 mm minimum