003M2 Search Results

BD138

Abstract: BDXXX transistors bd136 bd140 power transistor bd136 transistor bd138
Contextual Info: BD136 BD138 BD140 / V SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.

Contextual Info: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation

79c965

Abstract: AMD 79c97* lance
Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

BDXXX

Abstract: BDxxx-10
Contextual Info: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.

8D140

Abstract: BDXXX 8d136 BD136-BD138-BD140 BD140 BD136 transistors bd136 transistor sot t06 BD138 BD139
Contextual Info: BD136 BD138 BD140 SILICO N PLANAR EPITAXIAL POW ER T R A N SIST O R S General purpose p-n-p transistors in SO T-32 plastic envelop«, recommended for driver stages in hi-fi amplifiers and television circuits. The BD135, BD137 and BD139 are complementary to the BD136, BD138 and BD140 respectively.

Contextual Info: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-670 Z Preliminary - Rev. 0.1 Mar. 13, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word

190-32 UNF-2a

Abstract: 1N5812 diode 1N5812 1N5814 1N5816 1N5816 diode 478D
Contextual Info: MIL SPECS 44E » • DDQQ12S DG34E74 SST ■ M I L S j INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 February 1994 MIL-S-19500/478E 25 October 1993 SUPERSEDING MIL-S-19500/478D

3hM22

Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

Contextual Info: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read

photoconductive cell cdse

Abstract: NSL-4960 MSL-5910 cds cell photoconductive cells J 6920 A 6920 Photoconductive Cell J 6920 NSL-6910
Contextual Info: SILONEX INC 47E D • Û2SS271 □□003M2 ê ■ SXI SILONEX s * r Preliminary Data Sheet T O -8 PHO TO CO NDUCTIVE CELLS — ! t -</a v / FEATURES • F iv e Photoconductive Materials

IC TTL 7495 diagram and truth table

Abstract: l7585 LUCL7585DP-D LUCL7585DP-DT 40CF1
Contextual Info: Advance Data Sheet January 1998 m icroelectronics group Lucent Technologies Bell Labs Innovations L7585D Full-Feature, Low-Power SLIC and Switch Features Description • Low active power The L7585D Full-Feature, Low-Power Subscriber Loop Interface Circuit SLIC and Switch integrates

Contextual Info: 47E D • 023SbOS □G3425&#39;ì 7 ■ S I E G SIEM ENS SIEMENS AKTIENGESELLSCHAF 'T - '- n - t n - c n 5 V-Modulator TDA 5664 Preliminary Data Bipolar 1C Function Monolitic integrated circuit for use as a modulator in the 30 to 860 MHz range. Application Video recorders, cable converters, cable TV head stations,

Contextual Info: K M 4 4 C 10 0 5 D J CMOS DR A M ELECTRONICS 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

transistor h44

Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)

Contextual Info: PRELIMINARY AMDH Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations ■ — Hardware method for detection of program or

qml-38535

Abstract: 5962-9164001M2A 26C32 CQCC1-N20 GDFP2-F16 GDIP1-T16 26C32 National t35c
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with NOR 5962-R107-95. 95-04-12 M. A. FRYE Add case outline X. Update boilerplate. Editorial chanoes throughout, -rrp 98-02-19 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.