0037B Search Results

CD4529B

Abstract: CD45298 W640
Contextual Info: HARRIS SEMICOND SECTOR 4ME D m 4302571 0037bS0 D SHAS T - - Ö 00 HARRIS STROBE X 9TROBEY ,~Ts1 CMOS Dual 4-Channel Analog Data Selector il 2 H ig h -V o lta g e T yp es 20 -V o lt R ating 3 4 ïir V q d = PIN 16 V g S = PIN Ô 9 2 C S -3 9 29 3 FUNCTIONALDIAGRAM

CD45418

Abstract: 4541B 88ti
Contextual Info: HARRIS SEMICON» SECTOR 44E T> 4302571 m f!H H A R R IS 0037b44 3 E9HAS CD4541B Types CMOS Programmable Timer A -IÎ8 1 H ig h -V o lta g e T yp es 2 0 -V o lt R atin g £ Featu res; n 8 -Û "&Rs-iMR — MODE O/B — SELECT • Low sym m etrical ou tput resistance, ty p ic a lly 100n at

WM-52E

Contextual Info: S2E » • 712*1237 0037b34_470 ■S6TH S fi SGS-THOMSON T ~ if é - I 3 ~ 2 c\ S-THOMSON M27V201 LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ADVANCE DATA ■ LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (Ta = -40 to 85°C)

M27C

Abstract: 27C160 M27C16
Contextual Info: 52E J> m TTETSa? 0037bbb TflO • SGTH T~%~I3 - 2 e? S G S - 1H O M S O N S fi S - T H O M S O N L iM M Q § M 27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE

B32595-C5103-M

Contextual Info: fl23Sb05 0037bb4 7 MKT Chip Capacitors ISIEG f l ' 0 5 “- | r7 ' P 5 ' SIEMENS AKTIEN6ESELLSCHAF B 32S95 47E I p R E U M ' N A f W Preliminary data MKT capacitors, chip version, Ur = 50 V dc Self-healing capacitor with polyethyleneterephthalat dielectric; encapsulated in a flame-retardant

ARM1156T2F-S datasheet

Abstract: ARM1136J-S ARM1156T2F-S ARM926EJ-S ARM946E-S
Contextual Info: Base Platform ABI for the ARM architecture Base Platform ABI for the ARM Architecture Document number: ARM IHI 0037B, current through ABI release 2.08 Date of Issue: 10th October 2008, reissued 28th October 2009 Abstract This document describes the Base Platform Application Binary Interface for the ARM architecture. This is the base

h952

Abstract: ATI Research 7bl2 sgs thomson 27C1024 FM27c1024
Contextual Info: HE J> • 7^2^537 0037bl0 T37 S G S -TH O M S O N S 6 ISGTH S-THOMSON 5 7 . T -H-é-ll-ZI M27C1024 CMOS 1Megabit 64K x16 UV EPROM and OTP ROM ■ FAST ACCESS TIME: 120 ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION:

Contextual Info: SEE S G S D - • T E H t 7 [ì 2 cì 2 3 7 O t J M W S M O O i 3T4 ■ SGTH S fi S - T H O M S O N N g 0037b2b S M 2 T 7 C 2 1 - ^ / 3 - 2 *? CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­

precap

Contextual Info: bEE ]> • bM27SSS 0037b53 0T3 «NECE N E C ELECTRONICS INC PHOTO DIODE / _ N D L 5 4 0 5 C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS <£80 i i m InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405C is an InGaAs PIN photo diode for a light detector of long wavelength transmission systems. It covers the

Contextual Info: bEE » • N E C b427555 0037b30 5Tb « N E C E _ PHOTO DIODE ELECTRONICS INC _7 ND L5100C 1 300 nm OPTICAL FIBER COMMUNICATIONS 100//m GERMANIUM AVALANCHE PHOTO DIODE D E S C R IP T IO N N D L 5 1 0 0 C is a G erm a n iu m Avalanche P h o to d iode especially designed fo r a d e te cto r o f long w avelength fib e r transmission

N1475

Contextual Info: f l 235 bOS G G 37 b 47 7 • MKT Capacitors SI EMENS A KT I EN 6 E S E L L S C H A F M7E D - - SIEG E3 B 3 2 5 2 0 .B 3 2 52 9 / f 'C f S l 7 ' O S. M e t a liz a d p o ly e s t e r film c a p a c it o r s in a c c o r d a n c e w it h D IN 4 4 1 1 2

40100B

Abstract: MME transistor 401 cd40100
Contextual Info: A R R Ì S E C o m | n d | d | o ^ 4 CMOS 32-Stage StàticLett/RightShiff Register High-Voltage Types 20-Volt Rating • ÇD40100B is a 32-stage shift reg•ister containing 32 D-type master-slave flip ' flops. The data present at the SHIFT-RIGHT INPUT is transferred into the first register stage synchronously w ith the positive CLOCK edge,

24CIB

Abstract: TIC 216 D
Contextual Info: HARRIS SEMICOND SECTOR I j j y HARRIS 4HE D ES 4302271 00375=113 7 IB HAS CD 4 5 1 9 B T y p e s B 1 CM O S 4-Bit A N D /O R Selector, Quad 2-Channel Data Selector, or Quad Exclusive NOR Gate High-Voltage Types 20-Volt Rating Features: N oise m a rg in (o v e r fu ll p a c ka g e te m p e ra ture ra n g e ) - 1V a t VDq = 5 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13750-4E 16-bit Microcontroller CMOS F2MC-16LX MB90920 Series MB90F922NC/F922NCS/922NCS/F923NC/F923NCS/ MB90F924NC/F924NCS/V920-101/V920-102 • DESCRIPTION The MB90920 series is a family of general-purpose FUJITSU SEMICONDUCTOR 16-bit microcontrollers designed for applications such as vehicle instrument panel control.

Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM SPECIFICATION REVISION HISTORY REV. NO. 0.0 SUMMARY DATE Initial Release 1997. 1. 29 • • • » • • • • • • • • Rev 0.0 ELECTRONICS • 7^4142 00372^7 AIT PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM

43e smd code

Abstract: smd 43e F 43 E AD977ASD AD977A MiL-STD-973 qml38535 qml-38535
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET 15 16 REV STATUS REV OF SHEETS SHEET PM 1C N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: COM’L: -12/15/20 IND: -14/18/24 M A C H 2 1 5 -1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins 38 Inputs with pull-up resistors ■ 32 Output Macrocells 32 Outputs ■ 32 Input Macrocells

Contextual Info: NEW JEDEC SDRAM MODULE KMM466S804AT KMM466S804AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

633sb

Contextual Info: fl235bOS D037b47 7 SIEG □ M K T Capacitors SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 32529 ft~ O S l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

m8334

Contextual Info: fl235bOS D037b47 7 SIEG M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

TI 046 fRam

Contextual Info: C O N E X A N T BI8370/8375/8376 Fully Integrated T l/E l Framer and Line Interface The Bt8370/8375/8376 is a family of single chip transceivers for T1/E1 and Integrated Service Digital Network ISDN primary rate interfaces, operating at 1.544 Mbps or 2.048 Mbps. These devices combine a sophisticated framer, transmit and receive slip

cd40988

Abstract: CD45368 CD4536B 31716 m774 15-V cd4536
Contextual Info: HARRIS SEMI COND S E C T OR 44E D SS 4305271 Q037b30 3 E1HAS CD4536B Types 33 HARRIS CM O S Programmable Timer High-Voltage T y p e s 20-V ö lt Rating} A fast test mode is enabled by a logic 1 on 8-8 YP A S S, S E T , and R E S E T . This mode •24 flip-flop stages — counts from 2° to 224

HL 4929 LF

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP88CK49/M49 CMOS 8-BIT MICROCONTROLLER TMP88CK49N, TMP88CM49N TMP88CK49F, TMP88CM49F TMP88CK49N, TMP88CM49N, TMP88CK49F, and TMP88CM49F, are high-speed, high-function 8-bit single­ chip microcomputers whose built-in features include large-capacity RAM, multi-function timer/counter, and

Siemens MKT

Contextual Info: fl235bOS D037b47 7 SIEG □ MKT Capacitors SIEMENS AKTIENGESELLSCHAF M7E D B 32520 .B 32529 ft~ O S l7-o Metalized polyester film capacitors in accordance w ith DIN 44112 VR = 63 to 630 Vdc With quality assessment according to CECC 30401-043, edition 1, June 1983.