001L7 Search Results

Contextual Info: S5104bô 001L7E1 1Ö4 • u m TECHNOLOGY [ M T O L B E LIM I Final E le ctrica l S p ecificatio ns LTC1553 5-Bit Programmable Synchronous Switching Regulator Controller for Pentium Pro Processor February 1997 F€ATU߀S DCSCftlPTIOn ■ 5-Bit Digitally Programmable 1.8V to 3.5V Fixed

Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 ^ o ìh lb n T O S H IB A TÏ D eT J D IS C R E T E /O P T O SEMICONDUCTOR ì 99D O^ESO 001L7t,3 ñ 16763 D -3=1-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 792 SILICON N CHANNEL MOS TYPE (7 T -M 0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS

bx31

Abstract: TMP90C840N BX21 UO6C P8LC 1X21x1 tmp90c841 TMP90C840F SLAA 1P06
Contextual Info: TO SH IB A UC/UPI 13E » • l O - î V a ^ 001L7 33 ü ■ « TOSHIBA TMP90C840 CMOS 8-BIT MICROCONTROLLERS TMP90C840N/TMP90C841N TMP90C840F 1. T-V?-/?-0g -r u o iQ /'YT'/V'57 OUTLINE AND CHARACTERISTICS

bx21

Abstract: TMP90C840 MPU90
Contextual Info: TO SH IB A UC/UPI 13E » • l O - î V a ^ 001L7 33 ü ■ « TOSHIBA CMOS 8-BIT MICROCONTROLLERS TMP90C840N/TMP90C841N TMP90C840F 1. T-V?-/?-0g -r uo iQ /'YT'/V'57 OUTLINE AND CHARACTERISTICS

84-PIN

Abstract: CY7C341B
Contextual Info: CY7C341B y CYPRESS Features • 192 macrocells in 12 LABs • 8 dedicated inputs, 64 bidirectional I/O pin • Advanced 0.65-micron CMOS technology to increase performance • Programmable interconnect array • 384 expander product terms • Available in 84-pin HLCC, PLCC, and

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­

Mosfet FTR 03-E

Contextual Info: Transistors Switching 500V, 10A 2SK2714 • F e a tu re s ►External dim ensions (Units: mm) 1 ) Low on-resistance. 2) ,+ 0 .3 1 - 0.1 High-speed switching. As+0-3 0.1 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e g u ara ntee d at V gss = ± 3 0 V .

Contextual Info: Transistors Digital transistors built-in resistors DTA123JE/DTA123JUA/DTA123JKA/DTA123JSA •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it

Contextual Info: SUPERSEDED BY MT58LC32K32/36C5 MT58LC32K32/36C4 32K X 32/36 SYNCBURST SRAM |U |IC R O N 32K x 32/36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V . o +0.2 0.1 — 0.5±0.1

Contextual Info: Transistors Low Frequency Transistor -32V, - 0.8A 2SB1197K •F e a t u r e s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = —0 .5 V (Ic / I b = - 0 . 5 A / - 5 0 m A ) 2) Ic = - 0 . 8 A . 3) C om plem ents the 2 S D 1 7 8 1 K. 0 8 ± 0.1

Contextual Info: SONY C X K 5 9 1 O O O T M /Y M /M -5 5 L L /7 0 L L /1 0 L L 131,072-word x 9-bit High Speed CMOS Static RAM Description The CXK591 OOOTM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized

BL444

Contextual Info: [VI 10-1500 MHZ TO-8 CASCADABLE AMPLIFIER HEW LETT PACKARD HAMP-1002 HAMP-1002TXV T E C H N IC A L D A T A A P R IL 1985 Features 12.96 0 . 510 12.44 ( 0 .490 ) ' WIDE 1 dB BANDWIDTH 5-1900 MHz DIA. EXCEPTIONAL PHASE LINEARITY 1.8 Degree Deviation from 100 to 1500 MHz

transistor A006

Abstract: TO-220FP
Contextual Info: Transistors Digital transistors built-in resistors DTD113EK/ DTD113ES •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in b ia s re s is to rs e n a b le the c o n figu ration o f an inverter circu it 2 .9 ± 0 .2 DTD113EK + 1 1 0.2

Contextual Info: Transistors Digital transistors built-in resistors DTA143XE/DTA143XU A/DTA143XKA/DTA143XSA •F e a tu re s 1) ^E xternal d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it

Contextual Info: Transistors Digital transistors built-in resistors DTA113ZE/DTA113ZUA/DTA113ZKA/DTA113ZSA •F e a tu re s 1) •E x te r n a l dim ensions (Units: mm) B u ilt-in b ia s re s is to rs e n a b le th e configuration o f an inverter circuit DTA113ZE 1.0± 0.1

Contextual Info: Transistors Digital transistors built-in resistors DTA143TE/DTA143TUA/DTA143TKA/DTA143TSA • E x t e r n a l d im e n s io n s (U nits: m m ) •F e a tu re s 1) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it

Contextual Info: IMD8A IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A •F eature« 1 ) DTA144T and DTC144T transistors are housed in a SMT package. •A b s o lu te maximum ratings (Ta“ 25*C) Parameter •C irc u it schematic Symbol

Z86C50

Abstract: G01L
Contextual Info: ZILOfi INC 30E D E 3 cJciflMD43 D D l b T h T fl S Z I L A d v a n c e In f o r m a tio n S p e c if ic a t io n Z86C50 CMOS Z8 CCP ICE IN-CIRCUIT EMULATOR FEATURES • 8-bil CMOS Z8 CCP base In-Circuit Emulation chip ■ 124-pin PGA package ■ Full Z8 CCP family instruction set

DTA114Y

Abstract: SC-75A T110
Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMB9N / IMB9A •F e a tu re s 1) T w o D T A 1 1 4 Y in U M T a n d S M T 2) M o u n tin g p o s s ib le w ith U M T 3 o r packages. • E x t e r n a l d im e n s io n s (U nits: m m ) U M B9N

2sd2166

Abstract: oc sc62
Contextual Info: T r a n s is to r s • 7 f l 2 f l 1 1 cì O G lbTG a b lT ■ LOW VcE sat TrànSÌStOr(Strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 #F eatures 1) •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) (I c / I b = 0.25V (Typ.) 2SD2098 = 4A/0.1A)

Contextual Info: S O N Y CXK58257BTM/BM -70LLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK50257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: Transistors Digital transistors built-in resistors DTD113ZK/ DTD113ZU / DTD113ZS • F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f a n in v e rte r c irc u it