G01L Search Results

A 1458 OPTO

Abstract: rockwell RC2324AC
Contextual Info: 7Ô11D73 G01L,7fib Obi • RKIil RC2324AC * Rockwell RC2324AC 2400 bps V.42 bis Modem Device Set INTRODUCTION FEATURES The Rockwell RC2324AC is a modem device set which operates over dial-up or leased lines at communication speeds up to 2400 bps, and with data compression deliv­

2SC3058

Abstract: high power switching transistor
Contextual Info: FUJITSU M I C R O E L E C T R O N I C S 31E » O 3 7 4 c17tiE G01L.57Ô T ESFMI T -3 3 5 ' January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran­

Contextual Info: Ordering number : EN4793A Thick-Film Hybrid 1C No. 4793A STK301-220 7-band, 2-channel Electronic Graphic Equalizer Overview The STK301-220 is a hybrid IC HIC for electronically controlled graphic equalizer applications and is equipped with on-chip electronic volume control for 7-band, 2channel graphic equalization, thereby permitting onetouch up-down control of all band gains. The STK301220 is a hybrid IC which com bines SC system and

2SC2429A

Abstract: 2SC2965 2SC2920 C2429A 2SC2429 2SC2964 C2429 C2920 1S90
Contextual Info: FUJITSU MIC R O E L E C T R O N I C S 31E J> HI 374^2 001fc52ô b H FMI c Q if in r ^ JsnuQfy 1990 Edition1-1_ - , ’ •:= P R O D U C T P R O F IL E — — P 2 3 - Î3 i t FUJITSU . * 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power Transistor_

transistor MRC 100-6

Abstract: 3000w audio amplifier delta 5.5KW frequency inverter 380 volt 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM VFD037V43A-2 car power amp circuit diagrams 1000w VFD110V23A manual 3000w dc to ac inverter Circuit diagram Ferrite ring Core for EMI Suppression motor vfd EMV-PG01X
Contextual Info: Preface Thank you for choosing DELTA’s high-performance VFD-VE Series. The VFD-VE Series is manufactured with high-quality components and materials and incorporates the latest microprocessor technology available. This manual is to be used for the installation, parameter setting, troubleshooting, and daily

Contextual Info: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc. FEATURES: DESCRIPTJON: • High-speed 16-bit bus exchange for interbus communica­ tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses

463345

Contextual Info: INTERNATIONAL RECTIFIER b5E J> MflSSLfiS DOlbaDS 735 INR Bulletin E27110 International S Rectifier IRFK6H150,IRFK6J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

Contextual Info: O K I Semiconductor MSC23B20-XXBS2/DS2 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B20-xxBS2/D S2 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access M emory M odule composed of two 4-M b DRAM s in SOJ MSM514280 packages mounted with two 0.2 jnF

Contextual Info: DS1305 DALLAS SEMICONDUCTOR DS1305 Serial Alarm Real Time Clock RTC FEATURES PIN ASSIGNMENT • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 Vcc2 L-u- 1 20 -ILI Vcci

Contextual Info: 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C466 IDT49C466A PRELIMINARY Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64-bit wide Flow-thruE DC • Separate System and Memory Data Input/Output Buses • — Error Detect Time: 10ns

Contextual Info: IDT54/74FCT3807/A ADVANCE INFORMATION 3.3V CMOS 1-TO-10 CLOCK DRIVER Integrated Device Technology» Inc. FEATURES: • 0.5 M IC R O N C M O S Technology • Guaranteed low skew < 350ps max. • Very low duty cycle distortion < 350ps (max.) • High speed: propagation delay < 3.0ns (max.)

CXK58257

Abstract: cxk56257b
Contextual Info: SONY CXK58257BTM/BM -7QLLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: PRELIM IN ARY SYNCHRONOUS SRAM 32K x 32/36 SRAM • • • • • • • • • • Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access times: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby Single-cycle disable Pentium BSRAM compatible

Pulse generator circuit

Abstract: three phase pulse generator 74LS DS1040 DS1040-100 DS1040-150 DS1040-200 DS1040-250 DS1040-500 DS1040-75
Contextual Info: DS1040 DS1040 Programmable One-Shot Pulse Generator DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT • All-silicon pulse width generator IN C 1 • Five programmable widths ÖÜTÜ OUTE 2 • Equal and unequal increments available gnd C 4 • Pulse widths from 5 ns to 500 ns