0015Q Search Results

Contextual Info: Technical S pecification 0015QPA60 48V in 1.5Vout 60Amp 2000Vdc Quar ter-brick Input Output Current Isolation DC/DC Conver ter The P Q6 0015Q PA6 0 Power Qor Peta q ua rter-b rick convert er is a n ext -gen er at io n, b oa r d- mou n ta b le, iso la t ed , fixed

Contextual Info: A N AUER PHILIPS/DISCRETE DbE D ~ • bb53T31 0015Qb3 □ ■ l MAINTENANCE TYPE for new design use MS11900Y MS1011B700Y r- 33 PULSED MICROW AVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

ck 66 ul94v-0

Abstract: IPC-A-610C capacitor 272 8kv
Contextual Info: Technical S pecification 0015QPA60 48V in 1.5Vout 60Amp 2000Vdc Quar ter-brick Input Output Current Isolation DC/DC Conver ter The P Q6 0015Q PA6 0 Power Qor Peta q ua rter-b rick convert er is a n ext -gen er at io n, b oa r d- mou n ta b le, iso la t ed , fixed

Contextual Info: 7 t}T7D7b DD1SDS3 74T Ordering number: EN 3298 LB1730 No.3298 Monolithic Digital IC SAiYO i High-Voltage, High-Current, _ Darlington Driver F u n c tio n s a n d F e a tu re s • Four independent high-voltage 85V , high-current (1.5A) Darlington driver

Contextual Info: PRELIMINARY MT4LC4007J S 1 MEG X 4 DRAM I^IICRON 1 MEG x 4 DRAM DRAM FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Single +3.3V ±0.3V power supply Low power, 0.25mW standby; 115mW active, typical JEDEC-standard pinout and packages

Indium Tac Flux 020

Abstract: CU-106A CU-106A shelf life of BGAS DALE SOMC k type thermocouple utl USR(pet) gold embrittlement
Contextual Info: APPENDIX A Surface Tension and the Self-Centering of BGAs ITS PHYSICS ARE REVIEWED T O G E TH E R W I T H SOLDER TYPE, TEM PERATURE A N D THE PRESENCE OF C O N T A M I N A T E S A N D H O W THEY IN F LU E N C E By Steve G r e a t h o u s e THE S E L F - A L I G N I N G M O V E M E N T OF DEVICES D U R I N G

M5L8085AP

Abstract: M5L8255AP-5 MSL8255AP-5 M5L8085 M5L8255ap M74LS373P M5L8255 M74ls373 5 Pen Pc Technology PPT Circuit UAA2022
Contextual Info: SIE D Mi • taSHTÓEñ t s u b i s h i DQlSGb? fl ■ MITSUBISHI LSIs n ic M P T R /n ip R C M 5 L 8 2 ~ 5 5 A P - 5 5 1 -1 ^ PROGRAMMABLE PERIPHERAL INTERFACE DESCRIPTION The M5L8255AP-5 is a family of general-purpose programm­ able in p u t/ output devices designed for use with an 8-bit/16blt parallel CPU as input/output ports. Device is fabricated

90C31

Contextual Info: m ^7ifi52fl ooma?a 1 ? 'T - S 2 - 3 S - 4 £ WD90C31A High Performance Video Controller with Windows Accelerator WD90C31A WESTERN DIGITAL CORP 54E ]> • ^710220 001407*} 003 Hlil] TABLE OF CONTENTS T—5 2 - 3 3 - 4 5 Section Title Page , 1.0 INTRODUCTION

Contextual Info: Features • Fast read access time – 45ns • Low-power CMOS operation • • • • • • • • – 100µA max standby – 20mA max active at 5MHz JEDEC standard packages – 28-lead PDIP – 32-lead PLCC 5V± 10% supply High-reliability CMOS technology

Contextual Info: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature

TECHNICAL SPECS OF IR 736 P

Contextual Info: M ic r o c h ip P IC 1 6 C 5 5 X EPROM-Based 8-Bit CMOS Microcontroller Devices included in this data sheet: P iin • PIC16C554 • PIC16C556 • PIC16C558 Diagram PDIP, SOIC, Windowed CERDIP R A 2- RA3-. High Performance RISC CPU: RA4/T0CKI MÜLR- • Only 35 instructions to learn

Contextual Info: SAM SUNG E L E C T R O N I C S INC b7E D O D I S Ö E T StB KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM591000C is a 1M b i t x 9 Dynamic RAM high density memory module The S a m s u n g

quan-tech

Abstract: E34-E35 ANI 1015 awm 1015 wire E271 lb 122 s dvjq k514
Contextual Info: MIL SPECS k J 00DD1E5 □ □ U T S ? 3 ~T *79 " O b Mî 1_~ M- 3 Ti »51r. /1 3 r> 1H [incense1, 1987 s u p e r s e d in g HI L-M-38 510/13 5A 18 August 1986 MILITARY SPECI FI CATI ON MICROCIRCUITS, LI NEAR, LOW OFFSET OPERATIONAL AMP L I F I E RS MONOLITHIC SILI CON

ATMEL AT27c512r

Abstract: 28P6 AT27C512R AT27C512R-45JU AT27C512R-45PU AT27C512R-70JU AT27C512R-70PU MS-011 MS-016
Contextual Info: Features • Fast read access time – 45ns • Low-power CMOS operation • • • • • • • • – 100µA max standby – 20mA max active at 5MHz JEDEC standard packages – 28-lead PDIP – 32-lead PLCC 5V± 10% supply High-reliability CMOS technology

diode lt 341

Abstract: LTG14
Contextual Info: 0M TD Æ [f^ E U M S I Final Electrical Specifications / t u m TECHNOLOGY LTC1421 Hot Sw ap Controller i June 1996 F€flTUft€S DCSCRlPTIOn • Allows Safe Board Insertion and Removal from a Live Backplane ■ System Reset and Power Good Control Outputs

Contextual Info: 4655452 tor 137 H IN R PD-9.387H R e c tifie r _ IRFD9210 HEXFET P o w e r M O S F E T • • • • • • • 0015D 7Q IN T E R N A T IO N A L R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated For Autom atic Insertion End Stackable

010-89-7200

Abstract: GT15
Contextual Info: \ CKT„ SIZE J I - H G F -E D - C _ 12 13 DIM. A REF. MM INCH 11 10 DIM. B REF. (MM) 4 (2.54) .100 (5.0 8) .2 0 0 6 (5.0 8) .2 0 0 (7.62) .3 0 0 8 (7.62) .3 0 0 ( I0 .I6 ) .4 0 0 IO (I0 .I6 ) .4 0 0 ( I2.70) .5 0 0 I2 ( I2.70) .5 0 0 ( I5.24)