GT15 Search Results

GT15Q101

Contextual Info: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL

Contextual Info: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)

Contextual Info: TO SHIBA GT15J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 1 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS 1 5 .9 M A X M O TO R CONTROL APPLICATIONS • • • • ;S3.2 ± 0 .2 m High Input Impedance High Speed : tf=0.35/*s Max.

GT15N101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15N101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15.9 MAX 02 l2±O.2 . High Input Impedance . High Speed : tf=1 *O y s M a x , . Low Saturation Voltage : V c e (s a t ) ~ 5•0 V ( M a x .)

TRANSISTOR 15J321

Abstract: 15j321 RG105
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.

Contextual Info: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth-generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.20 µs TYP. (IC = 15 A)

GT15Q301

Contextual Info: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)

Contextual Info: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.

Contextual Info: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)

Contextual Info: T O SH IB A GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiT iin ? n i HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 /¿s Max. Low Saturation Voltage : V q e (sat) = 2.7 V (Max.)

GT15Q301

Contextual Info: TO SH IBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)

15j331

Contextual Info: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 µs typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)

VF50

Contextual Info: GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications • The 3rd generation • Enhancement-mode • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)

GT15Q301

Contextual Info: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.32 s Max. z Low saturation voltage

GT15J331

Contextual Info: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • The 4th Generation • Enhancement-Mode • High Speed: tf = 0.10 µs typ. • Low Saturation Voltage: VCE (sat) = 1.75 V (typ.)

2-10R1C

Abstract: GT15J321
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • The 4th generation • FS fast switching • Enhancement-mode • High speed: tf = 0.03 µs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.)

GT15Q102

Abstract: GT15Q301
Contextual Info: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)

toshiba Ta

Abstract: GT15M321
Contextual Info: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 µs TYP. (IC = 15 A)

GT15M321

Contextual Info: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.20 µs TYP. (IC = 15 A) Low Saturation Voltage

15j301

Abstract: transistor 15j301 GT15J301 2-10R1C
Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage

GT15J341

Contextual Info: GT15J341 Discrete IGBTs Silicon N-Channel IGBT GT15J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit

gt15j101

Contextual Info: GT15J101 TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 01 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS 1 5.9 M A X M O TO R CONTROL APPLICATIONS • • • • H igh Input Impedance H igh Speed : tf= 0 .3 5 //s Max.

LTSG

Abstract: gt15j101
Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH GT15J101 POWER SWITCHING APPLICATIONS. U n it in nun MOTOR CONTROL A P PL IC AT IO NS. High In p u t Impedance High Speed Low S a t u r a t i o n V oltag e Enhancement-Mode 1 5 .9 MAX . 0 3 .2 ± 0 .2

Contextual Info: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 1 5 J 1 SILICON N -CH ANN EL IGBT 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.