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    15j331

    Contextual Info: 15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 µs typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)


    Original
    gt15j3312-10hiba15j331 PDF

    15J331

    Abstract: TOSHIBA IGBT DATA BOOK TRANSISTOR 10003 GT15J331
    Contextual Info: 15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 µs typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)


    Original
    gt15j33115j331toshiba igbt data booktransistor 10003 PDF

    15j331

    Contextual Info: 15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 s typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)


    Original
    gt15j3312-10sesented15j331 PDF

    15J331

    Abstract: GT15J331
    Contextual Info: 15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J331 High-Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 s typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)


    Original
    gt15j33115j331 PDF