00151 Search Results

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: International e ?r R ectifier HEXFET P o w e r M O S F E T • • • • • 4655452 0015175 b^O H I N R PD-9.646A IRFI830G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

Contextual Info: International Tor ; Rectifier 4 fiS 5 4 5 B HEXFET Pow er M O S F E T IN T E R N A T IO N A L R E C T I F I E R • • • • • 0015154 b?5 PD-9.650A IN R IRFI730G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

Contextual Info: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.

7Z24132

Contextual Info: I N AflER P H I L I P S / D I S C R E T E developm ent ObE D bb53T31 0015147 b • data PZ2327B15U T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. T -c 3 % - o * f M ICRO W AVE P O W E R T R A N SIST O R

marking 3t1

Abstract: marking S3 amplifier RV2833B5X
Contextual Info: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

IEC134

Abstract: PTB42001X PTB42002X RTC4202X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: HARRIS SEtllCOND SECTOR ÜJ H A R R IS ItE D • 430SS71 0015113 5 ■ H D -15530/883 CMOS Manchester Encoder-Decoder June 1989 Pinouts Features • T h is C irc u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is Fully HD1-1 5 5 3 0 /8 8 3 CERAMIC DIP

2N7016

Abstract: 2N701 25X1 la 4548
Contextual Info: SILICONIX INC lflE D -fiTfffigSCSS { • 8554735 0015125 2 2N7016 - ~ ~T-JP\-n _ P-Channel Enhancement Mode Transistor 4-P IN DIP Similar to T O -250 TOP VIEW PRODUCT SUMMARY V(BR|DSS -6 0 •d ,o?Ar (A) 1 .0 -0 .7 0 D 1 GATE 2 SOURCE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25' C Unless Otherwise Noted)1

SIEMENS BST

Abstract: SIEMENS BST P BSTP45110 BSt N 45 B 90 bst 6126 y N46C166 BSTP6113Y SIEMENS BSTP46166 Siemens 6126 BSt p 45 B 90
Contextual Info: SIEMENS AKTIENGESELLSCHAF SAD D • £5351,05 0015155 fi ■ SIEG Phase-control thyristors TVpe V drm ¿TAV V rrm V BStN45B 60 I -tsm f i 2d t 25 °C , 10ms 25°C , 10ms A 2s A dv/df c (d;/df)c fq V/ns A/^S [IS 1 200 BSt N 45 B 90 1 350 BSt N 45 B 110 1 650

Contextual Info: G • M 'C R Ä ” t.24=iaaa 0015135 t ■ M IT S U B IS H I lsu M33220GS-20 " •\ iT ^ -n -v z - C M O S 3 2 -B ÍT P A R A L L E L M I C R O P R O C E S S O R M 3 2 /2 0 0 NITSUBISHI-CtllCMPTR/tllPRO DESCRIPTION S^E D PIN CONFIGURATION (BOTTOM VIEW>

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam­ ic RAM high density memory module. The Samsung

595-PH

Abstract: 30V 595PH
Contextual Info: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.

Z08420-02CMB

Abstract: Z0842004CMBSMD Z0842002CMB z80 cio
Contextual Info: ZILOG INC 3QE D • ^ 8 4 0 4 3 0015141 0 ■ I Z 8420 M ilitary T :5 5 33 > 5 3 Z 8O P I O Parallel _Input/Output Controller M ilitary Electrical Specification ¿■U U y December 1989 FEATURES Provides a direct interface between Z80 microcomputer

Contextual Info: HARRIS SEMICOND SECTOR 30 HARRIS I I HA-2640/45 IDE D 4305271 00151SS b High Voltage Operational Amplifiers Features • • • • • • • Applications Output Voltage Swing. ±35V Supply Voltage. ±10Vto±40V

HA2655

Contextual Info: HARRIS SEIIICOND SECTOR 10E D I 4302571 001515=1 3 | HA-2650/55 HARRIS Dual High Performance Operational Amplifier D escrip tio n • S L E W R A TE • BANDW IDTH • B IA S C U R R EN T • A VG . O F F S E T V O L T A G E D R IF T • PO W ER CONSUMPTION

PWR804

Abstract: PWR805 PWR809 BurrBrown 4128
Contextual Info: B U R R - B R O W N CO RP 11E „ | 1 7 3 1 3 t S 00151,13 » I pwR8xxSeriM "T-5 ~7~\\ I S B r PWR8XX Series 5 Watts— Triple-Output UNREGULATED D C /D C C O N VERTER SE R IE S FEATURES diverse applications as process control, telecommuni­ cations, portable equipment, medical systems, air­

40174B

Abstract: 40174 40174BE SGS semiconductor 40174BD
Contextual Info: S G S-THOMSON 07C D I 7 ^ 2 3 7 G O S/M O S INTEGRATED CIRCUIT h c c /h c f . 41C 7929225 S G S 0015132 0 I 09153 Oy 40i74B T-4 6 -0 7 -1 0 S E M IC O N D U C T O R C Q R P HEX " D " - TYPE FLIP-FLOP • • • • • • S T A N D A R D IZ E D S Y M M E T R IC A L O U T P U T C H A R A C T E R IS T IC S

Contextual Info: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:

Contextual Info: b3E • b2M^ae? MITSUBISHI 0015105 DGTL 527 ■ H IT 3 M ITSU B ISH I BIPOLAR DIGITAL ICs M 54574P L06IC 4 -U N IT 700m A TR A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54574P is a semiconductor integrated circuit, con­ sisting of four transistor

Contextual Info: • b3 E 1 ,2 4 1 6 2 7 001517b MITSUBISHI f i ß? « H IT B M IT S U B IS H I BIPO LAR D IG IT A L IC , M 54604P DÉTL LOGIC DUAL PERIPHERAL PO SITIVE NOR DRIVER DESCRIPTION M54604P is a semiconductor integrated circuit containing 2 PIN CONFIGURATION (TOP VIEW)

LM058

Contextual Info: HITACHI / OPTOELECTRONICS blE K • m i b S O S 0015155 035 ■ HIT1! *6 HITACHI LM 058 -r*f{ - 3 1 ■ 40 character x 1 line ■ Controller LSI H D 44780 is built-in (See page 115). IN T E R N A L PIN CONNECTION ■ +5V single power supply M E C H A N IC A L D A TA (Nominal dimensions)