000130 Search Results

SVT-6060

Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Contextual Info: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1

Contextual Info: CHIN Series ELCH06-BJ4J6Z10-N0 Received 1 MASS PRODUCTION 2 PRELIMINARY 2 CUSTOMER DESIGN DEVICE NO. : DHE-0001303 PAGE : 12 Revised record 1 REV. DESCRIPTION RELEASE DATE 1 New spec 2010.12.01 2 1.Change format 2.Change IVCCT、VF BIN 3.Change Package Dimension

2N4950

Abstract: Solitron Transistor
Contextual Info: SOLITRON DEVICES INC bl DE |fl3bflbD5 0001307 0 | ~}7 0 T - 9 3 - S' ENGINEERING DEVICE SPECIFICATION (Transistor • 1.0 SECTION I: 1.1 Construction: 2 W\'j50 SILICON DEVICE DESCRIPTION This device is an NPN Diffused Planar Power Transistor (86d) packaged in a double-ended stud-mounted case (HAH).

ELCH06

Contextual Info: CHIN Series ELCH06-BJ4J6Z10-N0 Received • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NO. : DHE-0001303 PAGE : 12 Revised record 1 Copyright Revision :3 LifecyclePhase: REV. DESCRIPTION RELEASE DATE 1 New spec 2010.12.01 2 1.Change format

Contextual Info: LOGIC D EV ICES IN C 5bE D • SSbS^OS 000130? _ L ■ T ~ 9 6 -0 9 -0 9 L29C818 Serial Scan Shadow Register DESCRIPTION Q Octal Register with Additional 8-bit The L29C818 is a high-speed octal register designed especially for appli­

578a

Abstract: V7-1Z39E9
Contextual Info: FO-50360-L 9 1 CW-B9766 REV 330 10 DOCUMENT 3 207443 4 0001305 C HANGED TS M BY CHECK 17FEB03 SAV 2SEP03 SAV C S L. 60 \ t .11 .40 . 165 t i t O 2X .2 50± .0 0 3 \ -PLASTIC PLUNGER NOTE MA X I MUM M E C H A N I C A L D E A D B R E A K OE T H I S S W I T C H C O N S T R U C T I ON

Contextual Info: LOGIC DEVICES INC 5bE D • SSbSIOS 0001301 0 ■ T-46-09-09 L10C11 Variable Length Shift Register DESCRIPTION FEATURES The L10C11 consists of two 4-bit wide, adjustable length shift registers. These registers share control signals and a common dock. Both shift registers

Seven Transistor Array PNP

Abstract: PNP DARLINGTON SINK DRIVER sink 8 low darlington array tets 251C IVI54566P M54566P pnp 8 transistor array pnp darlington array tsta 20c
Contextual Info: 1>ËJ| LEMiast, 000130 3 2 M I TSUBISHI ELEK -CLINEAR> ÖD gÍ ta M IT S U B IS H I B IP O LA R DIGTTAL IC s 6249826 MITSUBISHI ELEK 80C 0 9 3 0 3 "' o T - 3 ! 7 -U N IT 4 0 0 m A D ARLING TON T R A N S IS T O R ARRAY IN P U T “ L ” A C T IV E ¿ xi V-

"Varactor Diode" ma 4060

Abstract: varactor multiplier MA44700 varactor diode high frequency GHz step recovery diode MA44700 Series Multiplier Varactors MA44701 MA44705 MA44703 MA44710
Contextual Info: /MÎK m/a-com s e u i c o n d t B r l n c t o n 11 d • I S b 4 2 a m 0001304 t T -07-11 MA44700 Series Dualmode Multiplier Varactors Features ■ HIGHER EFFICIENCY IN HIGH POWER MULTIPLIER ■ BETTER BANDWIDTH THAN STEP RECOVERY DIODES IN LOW ORDER MULTIPLIERS

V7-1Z30E9

Abstract: 25A 277 VAC
Contextual Info: FO-50360-L 9 1 CW-B9756 REV 330 10 DOCUMENT 3 207443 4 0001305 C HANGED TS M BY CHECK 17FEB03 SAV 2SEP03 SAV C S L. 60 \ t .11 .40 . 165 t i t O 2X .2 50± .0 0 3 \ -PLASTIC PLUNGER NOTE MA X I MUM M E C H A N I C A L D E A D B R E A K OE T H I S S W I T C H C O N S T R U C T I ON

2N5004

Abstract: 2N5154 2N5328 OTC1550 OTC1900
Contextual Info: OPTEK TECHNOLOGY INC 4flE D WM fc,7TflSflO 0001303 Ô4T • OTK G>H OPTEK >— ' * - Product Bulletin OTC 1900 August 1990 NPN Power Switching Transistor Type OTC19QO t 35 " 80V, 10A Applications • • • • Inverters Switching Regulators

b974

Abstract: V7-1Z29D94
Contextual Info: I FO-50360-L CW-B9742 NOTES 1 - MA XI MUM M E C H A N I C A L DEAD BR EA K T H I S S W I T C H C O N S T R U C T I ON OE 0025 MA Y BE 9 I REV DOCUMENT 3 206280 4 0001305 10 CHANGED TSM BY CHECK 30AUG02 SAV CSL 2SEP03 SAV EXPECTED 40 _ C H A R A C T E R I S T I C S _

siemens TDB

Abstract: 5226 DIODE MARKING 9X TLE5226G 235L P-DSO-20
Contextual Info: • Ö2 35 L. 0S 0001302 424 SIEM EN S TLE 5226 G Smart Quad Channel Low-Side Switch Prelim inary Data Features • Low ON-resistance 2 x 0.2 Q , 2 x 0.35 £2 typ. • Power - SO 20 - Package with integrated cooling area • Overload shutdown • Selective thermal shutdown

DS936

Abstract: c936 radar scheme CLC936A8C CLC936AC P5MB
Contextual Info: STE D COMLINEAR CORP 257^101 000130b 147 € 12-Bit, 20MSPS A/D Converter CLC936 Comlinear Corporation ICMN 7 -S " 7 -7 ö ~ I ^ » 'S 1« ! » * . * FEATURES typical : • 71 dB spurious free signal range; fIN=4.97MHz • no missing codes guaranteed • 0.7LSB differential linearity

digital piano IC

Abstract: C546 A C4063 C546 CLL801 CLED155 CLL800 c381 tr c546 C279
Contextual Info: FASCO INDS/ SENISYS 40E D 34=1=1730 0001300 2 ^ S E N I I m sM snm CLL800/801 Series Digital Output IC Sensors 0-215 5 .4 6 ] n 0.205 £5.21] u 0.160 (4.063 DIA 0.150 (3 .8 0 WINDOW r 0.025 C0.643 _ L MAX 0.019 (0.48J DIA JjU ÏÏ 0,°16 C0,4133 LEADS 0.500 (12.703 — 1

VJ148XM

Abstract: VJ1048XM VJ248X VJ148 VJ048XM VJ248XM VJ448XM VJ648XM VJ848XM 9915 H
Contextual Info: MICROSEMI CORP/ HICRQ SbE T> • bllS'iO? 000130*1 2bö H MÖL MICR0 QUALITY / EBR '7r^?3'~£>7 SEMICONDUCTOR. INC 10 Amp Fast Recovery Time Epoxy Bridge Rectifiers 200 Nanosecond Reverse Recovery Time 50, 100, 200, 400, 600, 800, and 1000V VRRM Rating 10 Amps DC Forward Current at Tc = 60°C

diode 77G

Abstract: 77G DIODE DIODE ON SEMICONDUCTOR B34 b34 diodes on semiconductor DVH6700 varactor diode capacitance measurement dvh6731 CVH2000 DVH6742-11 varactor alpha
Contextual Info: ALPHA IND/ SEMICONDUCTOR HfiE J> • 0SA5443 0001301 Tbl M k L P Microwave Abrupt Tuning Diodes and Chips Features ■ ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage

2N4399

Abstract: Solitron Transistor
Contextual Info: ~bï DE7 ñ3bñb02 0001305 7 J T - 3 3 ^ 3 2 SECTION I: 1.1 Construction: N 4 5 9 DEVICE DESCRIPTION This device is a PNP Diffused Planar Power Transistor packaged in a single-ended TO-3 case. 1.1.1 General Assembly and Parts List: 1.2 DR_

QTC6530

Abstract: OTC6530 OTC653Q NPN POWER DARLINGTON
Contextual Info: OPTEK TECHNOLOGY INC 4 BE hi^&s&n D I OT K 0001300 321 ^ urm v Product Bulletin OTC653Q August 1990_ NPN Power Darlington Die Type OTC653Q 33-Z°\ 'T - 100V, 20A Collector Schematic Note 4 Base 1 o— ¿01 Q2 H f- D1 D2 R1 R2 Base 2 Emitter

MP2714C

Contextual Info: ACOUSTIC SYSTEMS SPECTRAL A N A LYS IS A U T O M A T IC TEST ANALOGIC CORP IS DEfl 0001301 4 g ~T-51-10-08~ §7 0 0 C S e rie s 10,12,13 and 14-Bit A/D CdH¥erters Ô High Precision, Stability and Speed with Exceptional Linearity for Automatic Test, Spectral Analysis,

SP6306

Contextual Info: 8368602 SOLITRON DEVICES INC hl DE|ñ3bflb0a 0001303 fron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS Voltage, Collector to Base V0B0 T~3ì-ll S NO.: SP6306 TYPE: NPN S IL IC O N C A S E: T 0 -2 2 0 500 . V 8.0 Voltage, Emitter to Base (V E S 0 )

SP6308

Abstract: lt33 TCA 700 VC80
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T l DE |ñ 3tfltDa 0001305 T olitron Devices, Inc. NO.: S P E C I F I C A T I O N S 7 ^ 3 3 '/ A SP6308 TYPE: NPN SILIC O N POWER . CASE: T0-220 MAXIMUM RATINGS Voltage, Collector to Base VC80 700 .

DVE4557-41

Abstract: a2p2 series and parallel resonance 100-C DVE4556-01 DVE4556-11 DVE4556-12 DVE4556-22 DVE4556-31 DVE4556-41
Contextual Info: ALPHA IND/ SEMI CONDUCTOR 46E D • 0SÔ5443 0001303 0T7 » A L P GaAs Parametric Amplifier Varactors 'TQ 1-W Features ■ ■ ■ ■ ■ Description High Gain and Low Noise Temperature Deloach and Houlding Measurements Insured Reproductibility High Reliability and Space Qualified

ELCH06

Abstract: ELCH06-BJ4J6Z10-N0
Contextual Info: CHIN Series ELCH06-BJ4J6Z10-N0 Received • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NO. : DHE-0001303 PAGE : 12 Revised record 1 REV. DESCRIPTION RELEASE DATE 1 New spec 2010.12.01 2 1.Change format 2.Change IVCCT、VF BIN 3.Change Package Dimension